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APT85GR120B2

Microchip Technology

APT85GR120B2 by Microchip Technology

Microchip Technology's APT85GR120B2 is an N-CHANNEL IGBT transistor with 1200V max collector-emitter voltage and 170A max collector current. Ideal for motor control applications, it has a 445ns turn-off time, 113ns turn-on time, and can handle up to 962W power dissipation.

Median Price

$14.140

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 8 parts In-Stock

1+ parts

$14.140

100+ parts

$11.475

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8

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$11.475

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Verical

USA . 10 parts In-Stock

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Nova Conductors

Japan . 60 parts In-Stock

1+ parts

$12.775

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60

$12.775

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Vyrian

USA . 5,028 parts In-Stock

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VNN

France . 2,814 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 1,176 parts In-Stock

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$0.530

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$0.530

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Corohmni

South Africa . 278 parts In-Stock

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$0.966

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278

$0.966

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AZTECH Wire

Italy . 718 parts In-Stock

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$5.902

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718

$5.902

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Semicontronic

India . 212 parts In-Stock

1+ parts

$12.490

100+ parts

$12.178

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$12.115

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212

$12.490

$12.178

$12.115

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Ampacity Inc.

Singapore . 208 parts In-Stock

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$12.490

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Continental Prestige Electronics

USA . 3,430 parts In-Stock

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$12.775

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$12.519

3,430

$12.775

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Microchip USA

USA . 5,520 parts In-Stock

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$43.484

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QUARKTWIN TECHNOLOGY LTD

USA . 22,553 parts In-Stock

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West Coast Incorporated

USA . 7,214 parts In-Stock

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iodParts Technologies Inc.

India . 3,906 parts In-Stock

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Argo Parts USA

USA . 516 parts In-Stock

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Netroflash

USA . 50 parts In-Stock

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$12.519

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$12.136

10k+ parts

$11.881

50

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$12.519

$12.136

$11.881

Overview

Enhance your motor control applications with the APT85GR120B2 from Microchip Technology. This N-CHANNEL Insulated Gate Bipolar Transistor offers superior quality and reliability, thanks to Microchip's reputable manufacturing standards. With a maximum collector-emitter voltage of 1200V and a maximum operating temperature of 150°C, this transistor ensures optimal performance in demanding environments. Whether you're designing industrial machinery or automotive systems, the APT85GR120B2 delivers exceptional power dissipation and fast switching times, making it the perfect choice for your projects. Upgrade to Microchip's IGBT technology and experience unparalleled efficiency and durability.

Feature Benefit Bullets

Dielectric Material: CERAMIC

Ceramic material provides high electrical insulation and stability, making it a reliable choice for capacitors.

Multi-layer: Yes

Multi-layer design offers increased capacitance in a compact size, maximizing efficiency and space utilization.

Packing Method: TR, PUNCHED PAPER, 7 INCH

Secure packing method ensures safe transportation and handling of the capacitors, reducing the risk of damage.

No. of Terminals: 2

Having two terminals simplifies the installation process and connectivity of the capacitor in circuits.

Package Style (Meter): SMT

Surface mount technology (SMT) package style allows for easy and efficient placement on PCBs, saving time and effort.

Terminal Shape: WRAPAROUND

The wraparound terminal shape provides a secure connection and stability, ensuring consistent performance.

Negative Tolerance: 10 %

10% negative tolerance indicates precision in capacitance value, leading to accurate and reliable circuit operation.

Temperature Characteristics Code: X7R

X7R temperature characteristics offer stable capacitance over a wide temperature range, making the capacitors suitable for various applications.

Maximum Operating Temperature: 125 °C

Capable of operating at high temperatures, providing durability and reliability in demanding environments.

Capacitor Type: CERAMIC CAPACITOR

Being a ceramic capacitor ensures high performance, low loss, and long-term stability in circuit applications.

Minimum Operating Temperature: -55 °C

Capable of functioning in low temperatures, making it suitable for a wide range of operating conditions.

Temperature Coef (ppm/°C): 15%

15% temperature coefficient indicates minimal change in capacitance with temperature fluctuations, ensuring consistent performance.

Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier

Matte tin finish with nickel barrier provides excellent solderability and corrosion resistance, enhancing the capacitor's reliability and longevity.

Height: 0.5 mm

Low profile height allows for compact and space-saving designs, ideal for applications with size constraints.

Width: 0.5 mm

Narrow width facilitates placement on PCBs with limited space, enabling efficient circuit design and layout.

Mounting Feature: SURFACE MOUNT

Surface mounting feature enables easy and convenient installation on PCBs, reducing assembly time and effort.

Length: 1 mm

Compact length provides flexibility in placement and arrangement within circuit layouts, optimizing space utilization.

Positive Tolerance: 10 %

10% positive tolerance ensures reliability in capacitance value, meeting performance requirements with consistency.

Capacitance: 0.001 uF

Capacitance of 0.001 uF is suitable for various applications requiring precise and stable capacitance values.

Reference Standard: AEC-Q200

Compliance with AEC-Q200 standard ensures high-quality and reliability, making the capacitors suitable for automotive and industrial applications.

Rated DC Voltage (URdc): 25 V

With a rated DC voltage of 25V, the capacitors are suitable for applications requiring voltage levels within this range.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) APT85GR120B2 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Microchip Technology

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

30 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

445 ns

Nominal Turn On Time (ton):

113 ns

Trade Compliance

APT85GR120B2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

Category top products 20

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