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APT80GP60B2G

Microchip Technology

APT80GP60B2G by Microchip Technology

APT80GP60B2G by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 284ns and a turn-on time of 87ns, making it ideal for power control applications requiring fast switching capabilities. The transistor comes in a rectangular package style with through-hole terminals, suitable for high-power electronic systems operating at temperatures up to 150°C.

Median Price

$18.870

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 41 parts In-Stock

1+ parts

$17.270

100+ parts

$16.605

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41

$17.270

$16.605

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Nova Conductors

Japan . 68 parts In-Stock

1+ parts

$20.470

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-

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68

$20.470

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Vyrian

USA . 820 parts In-Stock

1+ parts

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820

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VNN

France . 800 parts In-Stock

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800

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Dan-Mar Components

USA . 41 parts In-Stock

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41

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$1.421

100+ parts

$1.293

1k+ parts

$1.165

10k+ parts

-

100

$1.421

$1.293

$1.165

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AZTECH Wire

Italy . 748 parts In-Stock

1+ parts

$17.728

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748

$17.728

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Aranea Global

USA . 100 parts In-Stock

1+ parts

$20.061

100+ parts

-

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$19.258

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100

$20.061

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$19.258

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Continental Prestige Electronics

USA . 5,063 parts In-Stock

1+ parts

$20.470

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-

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$20.061

5,063

$20.470

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$20.061

Component Stockers USA

USA . 38 parts In-Stock

1+ parts

$22.390

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38

$22.390

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Ampacity Inc.

Singapore . 1,436 parts In-Stock

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$52.050

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1,436

$52.050

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Microchip USA

USA . 8,604 parts In-Stock

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$53.176

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8,604

$53.176

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RGB Technical Solutions

Ukraine . 7,122 parts In-Stock

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7,122

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Argo Parts USA

USA . 304 parts In-Stock

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304

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Overview

Discover the power of the APT80GP60B2G by Microchip Technology, a top-tier manufacturer known for its quality products. This Insulated Gate Bipolar Transistor (IGBT) boasts a single configuration and N-CHANNEL polarity, making it perfect for power control applications. With a maximum collector-emitter voltage of 600V and a maximum collector current of 100A, this transistor ensures reliable performance even in demanding scenarios. Experience the value and benefits of this robust component, designed to enhance efficiency and reliability in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, increasing the lifespan of the product.

Polarity or Channel Type: N-CHANNEL

Offers efficient power control capabilities for electronic devices.

Configuration: SINGLE

Simplified design for easy integration into electronic circuitry.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring optimal performance.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for industrial use.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) APT80GP60B2G attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Microchip Technology

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

284 ns

Nominal Turn On Time (ton):

87 ns

Trade Compliance

APT80GP60B2G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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