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APT85GR120J

Microchip Technology

APT85GR120J by Microchip Technology

APT85GR120J by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max power dissipation of 543W. It is designed for motor control applications, featuring a nominal turn-off time of 445ns and a built-in diode in a rectangular package style.

Median Price

$31.910

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

< 1k

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Microchip Technology

USA . 64 parts In-Stock

1+ parts

$31.910

100+ parts

$27.560

1k+ parts

$25.280

10k+ parts

$24.450

64

$31.910

$27.560

$25.280

$24.450

Mouser Electronics

USA . 11 parts In-Stock

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$31.910

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$27.560

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$31.910

$27.560

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NAC Semi

USA . 51 parts In-Stock

1+ parts

$29.600

100+ parts

$27.260

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$25.270

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51

$29.600

$27.260

$25.270

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VNN

France . 200 parts In-Stock

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Nova Conductors

Japan . 57 parts In-Stock

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Vyrian

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Aztec Data Supply Inc.

USA . 2,514 parts In-Stock

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$0.480

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2,514

$0.480

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Corohmni

South Africa . 209 parts In-Stock

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$1.793

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AZTECH Wire

Italy . 741 parts In-Stock

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$10.539

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$10.539

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Ampacity Inc.

Singapore . 11 parts In-Stock

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$29.800

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Semicontronic

India . 11 parts In-Stock

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$29.800

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$29.055

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$28.906

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Microchip USA

USA . 9,745 parts In-Stock

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$80.638

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QualityLine Systems

Poland . 5,465 parts In-Stock

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Marpe Global Electronics

Taiwan . 4,762 parts In-Stock

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Continental Prestige Electronics

USA . 3,978 parts In-Stock

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XL Components Corporation

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Argo Parts USA

USA . 663 parts In-Stock

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Perfect Parts

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Bastille Electronics

Australia . 50 parts In-Stock

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Overview

Looking for a reliable and high-quality Insulated Gate Bipolar Transistor (IGBT) for your motor control applications? Look no further than the APT85GR120J by Microchip Technology. With its N-CHANNEL configuration, built-in diode, and superior silicon element material, this transistor offers unmatched performance and efficiency. Whether you're working on industrial machinery or automotive systems, this UL RECOGNIZED component ensures optimal power dissipation and temperature resistance up to 150°C. Trust Microchip Technology for cutting-edge solutions that deliver exceptional value and reliability to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides good thermal and mechanical properties, making the IGBT durable and reliable in various operating conditions.

Polarity or Channel Type: N-CHANNEL

N-Channel IGBTs typically have lower conduction losses and higher efficiency compared to P-Channel IGBTs, making them suitable for motor control applications where high performance is required.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode helps in preventing reverse current flow and provides robust protection for the IGBT and the connected circuit, improving overall reliability.

Transistor Application: MOTOR CONTROL

Designed specifically for motor control applications, this IGBT offers high power dissipation capability and fast switching times, ideal for controlling the speed and direction of motors efficiently.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and installation in various systems, providing flexibility in design and integration.

Nominal Turn Off Time (toff): 445 ns

With a fast turn-off time of 445 ns, this IGBT can quickly switch off to minimize power losses and improve overall efficiency of motor control systems.

Maximum Power Dissipation (Abs): 543 W

With a high maximum power dissipation of 543 W, this IGBT can handle large power loads and operate reliably in high-power motor control applications.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for easy and secure mounting, ensuring good thermal conduction and mechanical stability during operation.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this IGBT can withstand elevated temperatures and operate reliably in demanding industrial environments.

Maximum Collector-Emitter Voltage: 1200 V

The high maximum collector-emitter voltage rating of 1200 V provides a wide voltage margin for safe and reliable operation in motor control applications.

Transistor Element Material: SILICON

Silicon-based IGBTs offer high performance, reliability, and efficiency, making them a popular choice for motor control applications.

Maximum Gate-Emitter Voltage: 30 V

The 30 V maximum gate-emitter voltage rating ensures safe and reliable operation of the IGBT's control input, protecting it from overvoltage conditions.

Minimum Operating Temperature: -55 °C

With a low minimum operating temperature of -55°C, this IGBT can operate in cold environments without performance degradation, ensuring reliable motor control even in extreme conditions.

Maximum Collector Current (IC): 116 A

The high maximum collector current rating of 116 A allows the IGBT to handle high current loads, making it suitable for heavy-duty motor control applications.

Maximum Gate-Emitter Threshold Voltage: 6.5 V

The 6.5 V maximum gate-emitter threshold voltage ensures precise and efficient control of the IGBT, enabling accurate switching and performance in motor control systems.

Terminal Position: UPPER

The upper terminal position facilitates easy connection and wiring of the IGBT, making installation and maintenance tasks convenient and hassle-free.

Case Connection: ISOLATED

The isolated case connection helps in preventing short circuits and improving safety in motor control applications, enhancing the overall reliability of the IGBT.

Nominal Turn On Time (ton): 113 ns

With a fast turn-on time of 113 ns, this IGBT can quickly switch on to provide precise control and efficient operation in motor control applications.

Reference Standard: UL RECOGNIZED

Being UL Recognized ensures that the IGBT meets the safety and performance standards set by Underwriters Laboratories, providing confidence in its reliability and quality for motor control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) APT85GR120J attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Microchip Technology

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

30 V

JESD-30 Code:

R-PUFM-X4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

UL RECOGNIZED

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

445 ns

Nominal Turn On Time (ton):

113 ns

Trade Compliance

APT85GR120J Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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