Loading...

STGD20N45LZAG

STMicroelectronics

STGD20N45LZAG by STMicroelectronics

STGD20N45LZAG by STMicroelectronics is an N-CHANNEL IGBT with built-in TVS diode and resistor, ideal for automotive ignition applications. It has a max VCEsat of 1.25V, collector-emitter voltage of 475V, and can handle a max current of 25A. Operating temperature ranges from -55 to 175°C.

Median Price

$1.950

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,529 parts In-Stock

1+ parts

$1.950

100+ parts

$0.841

1k+ parts

$0.612

10k+ parts

$0.589

3,529

$1.950

$0.841

$0.612

$0.589

DigiKey

USA . 1,823 parts In-Stock

1+ parts

$1.950

100+ parts

$0.841

1k+ parts

$0.623

10k+ parts

$0.509

1,823

$1.950

$0.841

$0.623

$0.509

Newark

USA . 827 parts In-Stock

1+ parts

$2.340

100+ parts

$1.320

1k+ parts

$1.180

10k+ parts

-

827

$2.340

$1.320

$1.180

-

Farnell

UK . 1,130 parts In-Stock

1+ parts

$2.490

100+ parts

$1.229

1k+ parts

$1.042

10k+ parts

-

1,130

$2.490

$1.229

$1.042

-

Verical

USA . 647,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.758

647,500

-

-

-

$0.758

Arrow

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.901

5,000

-

-

-

$0.901

Avnet

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,500

-

-

-

-

Element14

Singapore . 852 parts In-Stock

1+ parts

-

100+ parts

$1.480

1k+ parts

$1.340

10k+ parts

-

852

-

$1.480

$1.340

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 600 parts In-Stock

1+ parts

$1.270

100+ parts

-

1k+ parts

-

10k+ parts

-

600

$1.270

-

-

-

Digiode

USA . 3,570 parts In-Stock

1+ parts

$1.852

100+ parts

-

1k+ parts

-

10k+ parts

-

3,570

$1.852

-

-

-

Cyclops Electronics Ltd

UK . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15,000

-

-

-

-

Chip Stock

USA . 8,064 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,064

-

-

-

-

Vyrian

USA . 3,575 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,575

-

-

-

-

Anansix

USA . 2,876 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,876

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 379 parts In-Stock

1+ parts

$0.559

100+ parts

-

1k+ parts

$0.503

10k+ parts

-

379

$0.559

-

$0.503

-

Ampacity Inc.

Singapore . 3,493 parts In-Stock

1+ parts

$0.730

100+ parts

-

1k+ parts

-

10k+ parts

-

3,493

$0.730

-

-

-

Semicontronic

India . 3,231 parts In-Stock

1+ parts

$0.730

100+ parts

$0.712

1k+ parts

$0.708

10k+ parts

-

3,231

$0.730

$0.712

$0.708

-

MKK Technologies

India . 1,323 parts In-Stock

1+ parts

$1.052

100+ parts

-

1k+ parts

-

10k+ parts

-

1,323

$1.052

-

-

-

DigiPath Technology Company

USA . 1,323 parts In-Stock

1+ parts

$1.052

100+ parts

-

1k+ parts

-

10k+ parts

-

1,323

$1.052

-

-

-

Corohmni

South Africa . 165 parts In-Stock

1+ parts

$1.063

100+ parts

-

1k+ parts

-

10k+ parts

-

165

$1.063

-

-

-

Argo Parts USA

USA . 2,904 parts In-Stock

1+ parts

$1.270

100+ parts

-

1k+ parts

-

10k+ parts

-

2,904

$1.270

-

-

-

Aztec Data Supply Inc.

USA . 60 parts In-Stock

1+ parts

$1.320

100+ parts

-

1k+ parts

-

10k+ parts

-

60

$1.320

-

-

-

Corphita

USA . 103 parts In-Stock

1+ parts

$1.755

100+ parts

-

1k+ parts

-

10k+ parts

-

103

$1.755

-

-

-

Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$1.964

100+ parts

$1.866

1k+ parts

$1.866

10k+ parts

-

2,000

$1.964

$1.866

$1.866

-

Continental Prestige Electronics

USA . 1,180 parts In-Stock

1+ parts

$2.240

100+ parts

$1.430

1k+ parts

$0.970

10k+ parts

-

1,180

$2.240

$1.430

$0.970

-

Microchip USA

USA . 3,605 parts In-Stock

1+ parts

$6.689

100+ parts

-

1k+ parts

-

10k+ parts

-

3,605

$6.689

-

-

-

GreenTree Electronics

Israel . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15,000

-

-

-

-

Authorized Procurement Solutions

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,000

-

-

-

-

Lixinc

USA . 1,046 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,046

-

-

-

-

Netroflash

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

$1.245

1k+ parts

$1.207

10k+ parts

$1.181

1,000

-

$1.245

$1.207

$1.181

Parana Technologies

USA . 419 parts In-Stock

1+ parts

-

100+ parts

$0.669

1k+ parts

-

10k+ parts

-

419

-

$0.669

-

-

Overview

Elevate your automotive ignition systems with the STGD20N45LZAG Insulated Gate Bipolar Transistor by STMicroelectronics. Crafted with precision and quality, this N-CHANNEL transistor comes equipped with a built-in TVS diode and resistor for enhanced performance and reliability. Ideal for automotive ignition applications, this transistor offers a maximum VCEsat of 1.25V and a maximum collector-emitter voltage of 475V, ensuring optimal functionality under demanding conditions. Trust STMicroelectronics to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the internal components of the IGBT, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower conduction losses and higher efficiency compared to P-channel types, making this product more efficient.

Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

The built-in TVS diode and resistor offer additional protection and ensure stable performance in automotive ignition applications.

Transistor Application: AUTOMOTIVE IGNITION

Specifically designed for automotive ignition systems, providing reliable and efficient performance in this application.

Maximum VCEsat: 1.25 V

Low VCEsat results in lower power losses and higher efficiency, making this IGBT ideal for high-performance applications.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into electronic systems.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and connection, enhancing the usability of the IGBT.

Nominal Turn Off Time (toff): 14500 ns

Fast turn-off time improves the switching speed of the IGBT, making it suitable for high-frequency applications.

Maximum Power Dissipation (Abs): 150 W

High power dissipation capability allows the IGBT to handle large power loads without overheating.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures reliable performance in automotive environments with varying temperature conditions.

Maximum Collector-Emitter Voltage: 475 V

High collector-emitter voltage rating provides robustness and allows the IGBT to be used in a wide range of applications.

Transistor Element Material: SILICON

Silicon is a common and reliable material for power transistors, ensuring the durability and longevity of the IGBT.

Maximum Gate-Emitter Voltage: 16 V

High gate-emitter voltage rating offers protection against overvoltage conditions, enhancing the reliability of the IGBT.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows the IGBT to be used in cold environments without performance degradation.

Maximum Collector Current (IC): 25 A

High collector current rating enables the IGBT to handle large current loads, making it suitable for high-power applications.

Maximum Gate-Emitter Threshold Voltage: 2.1 V

Low gate-emitter threshold voltage ensures easy turn-on of the IGBT and improves overall efficiency.

Terminal Position: SINGLE

Single terminal position simplifies the connection and mounting of the IGBT, making it user-friendly.

Case Connection: COLLECTOR

Collector case connection allows for easy integration into electronic circuits and ensures proper heat dissipation for the IGBT.

Nominal Turn On Time (ton): 4560 ns

Fast turn-on time improves the switching speed of the IGBT, enhancing its performance in high-speed applications.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high-quality and reliability of the IGBT for automotive applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGD20N45LZAG attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

475 V

Maximum Gate-Emitter Threshold Voltage:

2.1 V

Maximum Gate-Emitter Voltage:

16 V

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AUTOMOTIVE IGNITION

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

14500 ns

Nominal Turn On Time (ton):

4560 ns

Maximum VCEsat:

1.25 V

Trade Compliance

STGD20N45LZAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19