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IXDN55N120D1

IXYS Corporation

IXDN55N120D1 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 450 W; Maximum Collector Current (IC): 100 A; Terminal Form: UNSPECIFIED;

Median Price

$16.570

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 2 parts In-Stock

1+ parts

$16.570

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2

$16.570

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 450 parts In-Stock

1+ parts

$29.572

100+ parts

-

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450

$29.572

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IBS Electronics

USA . 4 parts In-Stock

1+ parts

$31.332

100+ parts

$30.322

1k+ parts

$29.831

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4

$31.332

$30.322

$29.831

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Vyrian

USA . 2 parts In-Stock

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J2 Sourcing AB

Sweden . 1 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 553 parts In-Stock

1+ parts

$0.852

100+ parts

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553

$0.852

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Andel Nordic

Denmark . 322 parts In-Stock

1+ parts

$1.060

100+ parts

-

1k+ parts

$0.745

10k+ parts

$0.745

322

$1.060

-

$0.745

$0.745

Aztec Data Supply Inc.

USA . 4,580 parts In-Stock

1+ parts

$1.860

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4,580

$1.860

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AZTECH Wire

Italy . 703 parts In-Stock

1+ parts

$5.754

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703

$5.754

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Ampacity Inc.

Singapore . 2 parts In-Stock

1+ parts

$14.080

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2

$14.080

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Semicontronic

India . 2 parts In-Stock

1+ parts

$14.080

100+ parts

$13.728

1k+ parts

$13.658

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2

$14.080

$13.728

$13.658

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Continental Prestige Electronics

USA . 6,340 parts In-Stock

1+ parts

$29.572

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10k+ parts

$28.980

6,340

$29.572

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-

$28.980

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$29.572

100+ parts

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1k+ parts

$28.093

10k+ parts

$27.502

1,000

$29.572

-

$28.093

$27.502

Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$34.162

100+ parts

$31.429

1k+ parts

$29.450

10k+ parts

-

1,000

$34.162

$31.429

$29.450

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Microchip USA

USA . 162 parts In-Stock

1+ parts

$86.365

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162

$86.365

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Argo Parts USA

USA . 4,658 parts In-Stock

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4,658

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Perfect Parts

USA . 216 parts In-Stock

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216

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXDN55N120D1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

NICKEL

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

570 ns

Nominal Turn On Time (ton):

170 ns

Trade Compliance

IXDN55N120D1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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