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IXDN75N120

Littelfuse

IXDN75N120 by Littelfuse

IXDN75N120 by Littelfuse is an N-CHANNEL IGBT with 1200V VCEsat, 150A IC, and 660W power dissipation. Ideal for motor control applications due to its fast ton of 150ns and low toff of 700ns. Recognized by UL, it features a flange mount package style for easy installation.

Median Price

$25.955

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Overview

Experience the power of cutting-edge technology with the IXDN75N120 by Littelfuse, a leading manufacturer in the industry. This Insulated Gate Bipolar Transistor (IGBT) is designed for motor control applications, offering unmatched performance and reliability. With a maximum collector-emitter voltage of 1200V and a maximum collector current of 150A, this N-channel transistor provides exceptional power dissipation capabilities. Trust Littelfuse to deliver top-quality components that exceed expectations, ensuring optimal efficiency and durability for your projects. Elevate your designs with the IXDN75N120 and unlock a world of possibilities.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs typically have lower conduction losses compared to P-CHANNEL IGBTs, making them more efficient for motor control applications.

Configuration: SINGLE

Single configuration IGBTs are easier to control and integrate into motor control circuits, simplifying the design process.

Transistor Application: MOTOR CONTROL

Designed specifically for motor control applications, ensuring reliable and efficient performance in controlling the speed and direction of motors.

Maximum VCEsat: 2.7 V

Low VCEsat value indicates low saturation voltage, leading to reduced power losses and improved efficiency in motor control operations.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and integration into motor control systems.

Nominal Turn Off Time (toff): 700 ns

Fast turn-off time helps in reducing switching losses and improving the overall efficiency of the motor control system.

Maximum Power Dissipation (Abs): 660 W

High power dissipation capability ensures the IGBT can handle high levels of power in motor control applications without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for easy and secure installation in motor control systems, ensuring reliable operation.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the IGBT to withstand high environmental temperatures in motor control applications without performance degradation.

Maximum Collector-Emitter Voltage: 1200 V

High VCE voltage rating provides robustness and reliability in high voltage motor control applications.

Transistor Element Material: SILICON

Silicon material ensures high performance, reliability, and durability in motor control applications.

Maximum Gate-Emitter Voltage: 20 V

High gate-emitter voltage rating provides stable and precise control of the IGBT in motor control circuits.

Maximum Collector Current (IC): 150 A

High collector current rating allows the IGBT to handle high current levels in motor control applications without damage or performance issues.

Terminal Finish: NICKEL

Nickel terminal finish provides corrosion resistance and ensures secure electrical connections in motor control systems.

Terminal Position: UPPER

Upper terminal position simplifies the installation and connection of the IGBT in motor control circuits.

Case Connection: ISOLATED

Isolated case connection enhances safety and reliability by preventing electrical shorts and ensuring proper insulation in motor control systems.

Nominal Turn On Time (ton): 150 ns

Fast turn-on time enables quick switching and precise control of the IGBT in motor control operations.

Reference Standard: UL RECOGNIZED

UL recognized certification ensures compliance with safety and quality standards, making this IGBT a reliable choice for motor control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXDN75N120 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

NICKEL

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

700 ns

Nominal Turn On Time (ton):

150 ns

Maximum VCEsat:

2.7 V

Trade Compliance

IXDN75N120 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-12-354-7996, 5961123547996

NIIN

123547996

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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