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RGC80TSX8RGC11

ROHM

RGC80TSX8RGC11 by ROHM

ROHM RGC80TSX8RGC11 is an N-CHANNEL IGBT with 1800V VCE, 80A IC, and 535W power dissipation. Ideal for power control applications, it features a built-in diode, 725ns turn-off time, and -40 to 175°C operating temperature range.

Median Price

$9.957

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1k+

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Chip1Stop

Japan . 389 parts In-Stock

1+ parts

$9.680

100+ parts

$5.380

1k+ parts

$5.100

10k+ parts

$4.970

389

$9.680

$5.380

$5.100

$4.970

Element14

Singapore . 807 parts In-Stock

1+ parts

$9.957

100+ parts

$6.833

1k+ parts

$5.723

10k+ parts

-

807

$9.957

$6.833

$5.723

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Farnell

UK . 807 parts In-Stock

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$10.313

100+ parts

$6.586

1k+ parts

$5.514

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807

$10.313

$6.586

$5.514

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DigiKey

USA . 316 parts In-Stock

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$10.470

100+ parts

$6.220

1k+ parts

$4.889

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-

316

$10.470

$6.220

$4.889

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Newark

USA . 60 parts In-Stock

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$10.610

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-

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60

$10.610

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Verical

USA . 450 parts In-Stock

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$6.096

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$5.181

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450

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$6.096

$5.181

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Future Electronics

Canada . 180 parts In-Stock

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$4.260

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$4.110

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180

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$4.260

$4.110

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Nova Conductors

Japan . 100 parts In-Stock

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$7.040

100+ parts

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100

$7.040

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Vyrian

USA . 278 parts In-Stock

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278

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IBS Electronics

USA . 180 parts In-Stock

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$5.538

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$5.343

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180

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$5.538

$5.343

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NAC Semi

USA . 150 parts In-Stock

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$7.200

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$6.650

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150

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$6.650

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Semicontronic

India . 289 parts In-Stock

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$3.340

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$3.256

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$3.240

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289

$3.340

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$3.240

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Ampacity Inc.

Singapore . 198 parts In-Stock

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198

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CoreStaff

Japan . 450 parts In-Stock

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$5.124

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$3.792

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$3.634

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450

$5.124

$3.792

$3.634

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Aranea Global

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$6.899

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$6.623

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50

$6.899

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$6.623

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Continental Prestige Electronics

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$8.570

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$5.960

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425

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Microchip USA

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$27.636

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7,574

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10,000

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Argo Parts USA

USA . 1,630 parts In-Stock

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1,630

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Overview

Experience superior power control with the RGC80TSX8RGC11 by ROHM, a top-of-the-line Insulated Gate Bipolar Transistor. Known for its high-quality construction and reliable performance, this N-channel transistor offers customers unparalleled benefits in various applications. From its single configuration with built-in diode to its impressive maximum power dissipation of 535W, this product provides value and efficiency like no other. Trust ROHM for cutting-edge technology that delivers exceptional results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and durability for long-lasting performance.

Polarity or Channel Type: N-CHANNEL

Enhances efficiency and allows for better power control in the circuit.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space by incorporating a diode within the transistor package.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring reliable and efficient operation.

Maximum VCEsat: 5 V

Low voltage drop across the collector-emitter terminals for reduced power losses and improved efficiency.

Package Shape: RECTANGULAR

Allows for easy mounting and installation in various electronic devices or systems.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and connection to circuit boards for reliable electrical contact.

Nominal Turn Off Time (toff): 725 ns

Fast turn-off time helps in minimizing switching losses and improving overall performance.

No. of Terminals: 3

Provides necessary connections for proper functioning in power control applications.

Maximum Power Dissipation (Abs): 535 W

Capable of handling high power levels without overheating, ensuring reliable operation.

Package Style (Meter): FLANGE MOUNT

Offers a secure and stable mounting option for better mechanical support in demanding environments.

Maximum Operating Temperature: 175 °C

Can operate efficiently in a wide temperature range, suitable for various industrial applications.

Maximum Collector-Emitter Voltage: 1800 V

High voltage rating allows for the handling of high voltage circuits with safety and reliability.

Transistor Element Material: SILICON

Silicon material provides good electrical and thermal conductivity for optimal performance.

Maximum Gate-Emitter Voltage: 30 V

Sufficient voltage rating for gate control, ensuring stable and precise switching behavior.

Minimum Operating Temperature: -40 °C

Can function reliably in extreme cold conditions, suitable for a wide range of operating environments.

Maximum Collector Current (IC): 80 A

Capable of handling high currents for power control applications, ensuring reliable operation under load.

Maximum Gate-Emitter Threshold Voltage: 7 V

Optimal gate threshold voltage for efficient and controlled switching of the transistor.

Terminal Position: SINGLE

Simple terminal configuration for easy installation and connection in circuit designs.

Nominal Turn On Time (ton): 120 ns

Fast turn-on time for quick response in power control applications, improving overall efficiency.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) RGC80TSX8RGC11 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1800 V

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

30 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

725 ns

Nominal Turn On Time (ton):

120 ns

Maximum VCEsat:

5 V

Trade Compliance

RGC80TSX8RGC11 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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