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ROHM Insulated Gate Bipolar Transistors (IGBT) 14

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
RGS30TSX2DGC11 by ROHM

RGS30TSX2DGC11

ROHM

ROHM's RGS30TSX2DGC11 is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 30A, and VGE(th) of 7V. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 189ns and turn-on time (ton) of 39ns. Operates in temperatures ranging from -40°C to 175°C.

30 A

1200 V

SINGLE WITH BUILT-IN DIODE

7 V

30 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

189 ns

39 ns

2.1 V

RGTH40TK65DGC11 by ROHM

RGTH40TK65DGC11

ROHM

ROHM RGTH40TK65DGC11 is an N-CHANNEL IGBT with 650V VCE, 23A IC, and 141ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE and FLANGE MOUNT package style.

ISOLATED

23 A

650 V

SINGLE WITH BUILT-IN DIODE

R-PSFM-T3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

141 ns

47 ns

RGTH60TK65GC11 by ROHM

RGTH60TK65GC11

ROHM

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 28 A; Package Style (Meter): FLANGE MOUNT; Nominal Turn On Time (ton): 67 ns;

ISOLATED

28 A

650 V

SINGLE

R-PSFM-T3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

179 ns

67 ns

RGTH40TS65GC11 by ROHM

RGTH40TS65GC11

ROHM

ROHM RGTH40TS65GC11 is an N-CHANNEL IGBT with 650V VCE, 40A IC, and 47ns ton. Ideal for POWER CONTROL applications due to its fast switching times and high current handling capabilities in a RECTANGULAR package.

40 A

650 V

SINGLE

TO-247

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

141 ns

47 ns

RGTH60TS65DGC11 by ROHM

RGTH60TS65DGC11

ROHM

ROHM RGTH60TS65DGC11 is an N-CHANNEL IGBT with 650V VCE, 58A IC, and 179ns toff. Ideal for POWER CONTROL applications due to SINGLE configuration with BUILT-IN DIODE. Package style is FLANGE MOUNT in PLASTIC/EPOXY material.

58 A

650 V

SINGLE WITH BUILT-IN DIODE

TO-247

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

179 ns

67 ns

RGT50TM65DGC9 by ROHM

RGT50TM65DGC9

ROHM

ROHM's RGT50TM65DGC9 is an N-CHANNEL IGBT with 650V VCE, 21A IC, and 65ns ton. Ideal for POWER CONTROL applications due to its single configuration with built-in diode and fast turn-off time of 210ns. Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.

ISOLATED

21 A

650 V

SINGLE WITH BUILT-IN DIODE

TO-220AB

R-PSFM-T3

e3

1

3

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

210 ns

65 ns

RGTV60TS65DGC11 by ROHM

RGTV60TS65DGC11

ROHM

ROHM's RGTV60TS65DGC11 is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 60A max collector current. Ideal for power control applications, it features a single configuration with built-in diode and fast turn-off time of 201ns. Suitable for use in various electronic devices requiring efficient power management.

60 A

650 V

SINGLE WITH BUILT-IN DIODE

TO-247

R-PSFM-T3

e3

1

3

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

201 ns

45 ns

RGW60TK65GVC11 by ROHM

RGW60TK65GVC11

ROHM

ROHM RGW60TK65GVC11 is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 33A max collector current. Ideal for power control applications, featuring 209ns turn-off time, 50ns turn-on time, and a plastic/epoxy package body for through-hole mounting.

ISOLATED

33 A

650 V

SINGLE

R-PSFM-T3

e3

1

3

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

209 ns

50 ns

RGTVX6TS65DGC11 by ROHM

RGTVX6TS65DGC11

ROHM

ROHM RGTVX6TS65DGC11 is an N-CHANNEL IGBT with 650V max collector-emitter voltage, ideal for power control applications. Featuring a single configuration with built-in diode, it has a 144A max collector current and 298ns nominal turn off time. This IGBT operates b/w -40°C to 175°C temperature range.

144 A

650 V

SINGLE WITH BUILT-IN DIODE

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

298 ns

83 ns

RGS50TSX2DHRC11 by ROHM

RGS50TSX2DHRC11

ROHM

ROHM's RGS50TSX2DHRC11 IGBT is a single N-channel transistor with built-in diode, ideal for power control applications. With a max VCEsat of 2.1V and collector current of 50A, it offers efficient performance. Operating at temperatures up to 175°C, this IGBT has a turn-off time of 450ns, making it suitable for high-power applications.

50 A

1200 V

SINGLE WITH BUILT-IN DIODE

7 V

30 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

395 W

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

450 ns

53 ns

2.1 V

RGS80TSX2HRC11 by ROHM

RGS80TSX2HRC11

ROHM

ROHM's RGS80TSX2HRC11 is an N-CHANNEL IGBT with 1200V VCE, 80A IC, and 555W power dissipation. Ideal for POWER CONTROL applications, it features a fast turn-off time of 629ns and operates b/w -40°C to 175°C.

80 A

1200 V

SINGLE

7 V

30 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

555 W

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

629 ns

89 ns

2.1 V

RGS60TS65DHRC11 by ROHM

RGS60TS65DHRC11

ROHM

ROHM RGS60TS65DHRC11 is an N-CHANNEL IGBT with 650V VCEsat, 56A IC, and 223W power dissipation. Ideal for power control applications due to its fast turn-off time of 290ns and built-in diode. AEC-Q101 certified for automotive use in harsh environments.

56 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

30 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

223 W

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

290 ns

46 ns

2.1 V

RGS30TSX2HRC11 by ROHM

RGS30TSX2HRC11

ROHM

ROHM's RGS30TSX2HRC11 is an N-CHANNEL IGBT with 1200V VCEsat, 30A IC, and 267W power dissipation. Ideal for POWER CONTROL applications, it has a fast turn-off time of 189ns and operates b/w -40 to 175°C.

30 A

1200 V

SINGLE

7 V

30 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

267 W

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

189 ns

39 ns

2.1 V

RGW80TS65CHRC11 by ROHM

RGW80TS65CHRC11

ROHM

ROHM RGW80TS65CHRC11 is an N-CHANNEL IGBT with VCEsat of 1.9V and IC of 81A, ideal for POWER CONTROL applications. It has a max VCE of 650V and turn-off time of 185ns, suitable for high-power systems. The transistor operates b/w -40 to 175°C, making it versatile in various environments.

81 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

30 V

TO-247

R-PSFM-T3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

214 W

AEC-Q101

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

185 ns

54 ns

1.9 V