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RGTH40TK65DGC11

ROHM

RGTH40TK65DGC11 by ROHM

ROHM RGTH40TK65DGC11 is an N-CHANNEL IGBT with 650V VCE, 23A IC, and 141ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE and FLANGE MOUNT package style.

Median Price

$3.980

Lifecycle Status

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Farnell

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$3.840

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$2.540

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$1.910

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$3.840

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$1.910

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Chip1Stop

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$4.120

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DigiKey

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$6.590

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$3.768

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$3.146

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440

$6.590

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Verical

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$2.556

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Vyrian

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Ampacity Inc.

Singapore . 167 parts In-Stock

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$2.500

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167

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CoreStaff

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$8.177

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$1.609

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$1.565

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Microchip USA

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$16.688

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Overview

Experience the exceptional quality and reliability of ROHM with the RGTH40TK65DGC11 Insulated Gate Bipolar Transistor. Designed for power control applications, this N-CHANNEL transistor offers a single configuration with a built-in diode, providing enhanced performance and efficiency. With a maximum collector-emitter voltage of 650V and a nominal turn-off time of just 141ns, this transistor ensures seamless operation and optimal power management. Trust in ROHM's expertise and innovation to deliver cutting-edge solutions for your electronics needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower on-state voltage drop and higher efficiency compared to P-channel, making them a good choice for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies circuit design and protects against reverse voltage spikes, enhancing the reliability of the product.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring efficient and reliable performance in controlling high power loads.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections, making it easy to mount the component securely on a PCB.

Maximum Collector-Emitter Voltage: 650 V

The high maximum voltage rating allows the IGBT to handle high voltage applications safely and reliably.

Maximum Collector Current (IC): 23 A

With a high collector current rating, this IGBT can handle large power loads, making it suitable for high current applications.

Nominal Turn Off Time (toff): 141 ns

The fast turn-off time ensures quick switching speeds, reducing power losses and improving efficiency.

Nominal Turn On Time (ton): 47 ns

The fast turn-on time enables rapid response to control signals, making the IGBT suitable for high-frequency power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) RGTH40TK65DGC11 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from ROHM

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

141 ns

Nominal Turn On Time (ton):

47 ns

Trade Compliance

RGTH40TK65DGC11 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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