Loading...

FF600R17ME4BOSA1

Infineon Technologies

FF600R17ME4BOSA1 by Infineon Technologies

Infineon Technologies' FF600R17ME4BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1700V and max current of 950A, suitable for POWER CONTROL applications. With a toff of 980ns and ton of 320ns, it offers efficient switching in RECTANGULAR package style.

Median Price

$196.882

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2 parts In-Stock

1+ parts

$171.340

100+ parts

$161.060

1k+ parts

$150.780

10k+ parts

-

2

$171.340

$161.060

$150.780

-

DigiKey

USA . 8 parts In-Stock

1+ parts

$192.440

100+ parts

-

1k+ parts

-

10k+ parts

-

8

$192.440

-

-

-

Chip1Stop

Japan . 4 parts In-Stock

1+ parts

$295.000

100+ parts

-

1k+ parts

-

10k+ parts

-

4

$295.000

-

-

-

Verical

USA . 2 parts In-Stock

1+ parts

-

100+ parts

$201.325

1k+ parts

$188.475

10k+ parts

-

2

-

$201.325

$188.475

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 916 parts In-Stock

1+ parts

$227.753

100+ parts

-

1k+ parts

-

10k+ parts

-

916

$227.753

-

-

-

Nova Conductors

Japan . 25 parts In-Stock

1+ parts

$458.810

100+ parts

-

1k+ parts

-

10k+ parts

-

25

$458.810

-

-

-

Vyrian

USA . 4,151 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,151

-

-

-

-

Chip Stock

USA . 1,115 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,115

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 822 parts In-Stock

1+ parts

$1.217

100+ parts

-

1k+ parts

-

10k+ parts

-

822

$1.217

-

-

-

Modulus Dynamics

Lithuania . 9,298 parts In-Stock

1+ parts

$1.388

100+ parts

$1.332

1k+ parts

$1.277

10k+ parts

-

9,298

$1.388

$1.332

$1.277

-

Aztec Data Supply Inc.

USA . 273 parts In-Stock

1+ parts

$1.767

100+ parts

-

1k+ parts

-

10k+ parts

-

273

$1.767

-

-

-

AZTECH Wire

Italy . 751 parts In-Stock

1+ parts

$12.763

100+ parts

-

1k+ parts

-

10k+ parts

-

751

$12.763

-

-

-

Ampacity Inc.

Singapore . 7 parts In-Stock

1+ parts

$203.780

100+ parts

-

1k+ parts

-

10k+ parts

-

7

$203.780

-

-

-

Corphita

USA . 79 parts In-Stock

1+ parts

$215.766

100+ parts

-

1k+ parts

-

10k+ parts

-

79

$215.766

-

-

-

iodParts Technologies Inc.

India . 1 parts In-Stock

1+ parts

$271.600

100+ parts

-

1k+ parts

-

10k+ parts

-

1

$271.600

-

-

-

Aranea Global

USA . 100 parts In-Stock

1+ parts

$449.634

100+ parts

-

1k+ parts

$431.648

10k+ parts

-

100

$449.634

-

$431.648

-

Argo Parts USA

USA . 2,596 parts In-Stock

1+ parts

$458.810

100+ parts

$454.222

1k+ parts

$449.634

10k+ parts

$445.046

2,596

$458.810

$454.222

$449.634

$445.046

Continental Prestige Electronics

USA . 1,110 parts In-Stock

1+ parts

$458.810

100+ parts

-

1k+ parts

-

10k+ parts

$449.634

1,110

$458.810

-

-

$449.634

Microchip USA

USA . 6,801 parts In-Stock

1+ parts

$706.785

100+ parts

-

1k+ parts

-

10k+ parts

-

6,801

$706.785

-

-

-

Overview

Discover the Infineon Technologies FF600R17ME4BOSA1, a top-of-the-line Insulated Gate Bipolar Transistor designed for power control applications. With its N-CHANNEL polarity, series connected configuration, and built-in diode and thermistor, this transistor offers unmatched reliability and efficiency. Perfect for high-power systems, this product boasts a maximum collector-emitter voltage of 1700V and a maximum collector current of 950A. Trust Infineon Technologies to deliver cutting-edge technology that exceeds expectations and revolutionizes the way you approach power management.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs are known for their better performance and efficiency compared to P-channel IGBTs, making this product a good choice for power control applications.

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

This configuration allows for efficient power control and protection within the circuit, ensuring reliable performance and long-term durability.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT is optimized to handle high voltage and current levels effectively.

Maximum Collector-Emitter Voltage: 1700 V

With a high maximum voltage rating, this IGBT can withstand elevated levels of power and is suitable for demanding industrial applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FF600R17ME4BOSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1700 V

JESD-30 Code:

R-XUFM-X11

No. of Elements:

2

No. of Terminals:

11

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

980 ns

Nominal Turn On Time (ton):

320 ns

Trade Compliance

FF600R17ME4BOSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20