Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Insulated Gate Bipolar Transistors;
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$308.640
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Verical
$385.800
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Element14
$560.500
Digiode
$173.850
Nova Conductors
$437.179
Vyrian
Ampacity Inc.
$155.550
Corphita
$164.700
Continental Prestige Electronics
$355.670
Argo Parts USA
$432.807
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Microchip USA
$678.982
QUARKTWIN TECHNOLOGY LTD
Netroflash
$415.320
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FF600R12ME4AB11BPSA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
M24308/2-1F
Cristek Interconnects
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; No. of Rows Loaded: 2; Shell Size: 1/E; Filter Feature: NO;
CRCW040210K0FKED
Vishay Intertechnology
Vishay Intertechnology's CRCW040210K0FKED is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.063 W power dissipation. Ideal for surface mount applications in electronics due to its compact SMT package style and high operating temperature range of -55 to 155 °C.
1N4148WT
Yangzhou Yangjie Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Tak Cheong Electronics Holdings
2N7002-7-F
Diodes Incorporated
Diodes Inc. 2N7002-7-F is a N-channel FET with 60V DS breakdown voltage, 0.115A max drain current, and 13.5 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features Gull Wing terminals, small outline package style, and operates up to 150°C.
BAV99
SPC TECHNOLOGY/ MULTICOMP
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LM317LMX/NOPB
Texas Instruments
LM317LMX/NOPB by Texas Instruments is an adjustable positive single output standard regulator with a max input-output voltage differential of 40V. It operates in temperatures ranging from -40°C to 125°C and has a max output current of 0.1A, making it suitable for various applications requiring precise voltage regulation.
Daco Semiconductor
LM358M
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
LM317T
STMicroelectronics
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; JESD-30 Code: R-XSFM-T3; Minimum Input-Output Voltage Differential: 3 V;
BSS138
Onsemi
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Finish: Matte Tin (Sn) - annealed;
LM2931AZ-5.0RPG
LM2931AZ-5.0RPG by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V nominal output voltage and 0.1A max output current. It features a low dropout voltage of 0.6V, making it suitable for applications requiring stable power supply in temperature range from -40 to 125°C. The package style is cylindrical with matte tin terminal finish, ideal for various electronic devices needing precise voltage regulation.
CRCW080510R0FKEA
Vishay Intertechnology's CRCW080510R0FKEA is a fixed resistor with 10 ohm resistance, 1% tolerance, and 0.125 W power dissipation. Ideal for surface mount applications in automotive electronics due to its AEC-Q200 reference standard and operating voltage of 150 V. Operating temperature range from -55 to 155 °C ensures reliability in various environments.
Defense Logistics Agency
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mounting Type: CABLE AND PANEL; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Empty Shell: NO;
1N4148
Sinyork
RECTIFIER DIODE; Surface Mount: NO; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Output Current: .15 A; Maximum Repetitive Peak Reverse Voltage: 100 V; No. of Phases: 1;
MBRM140T1G
MBRM140T1G by Onsemi is a Schottky rectifier diode with 40V max repetitive peak reverse voltage, 1A max output current, and 0.3V max forward voltage. It is used in applications requiring small outline surface mount diodes for efficient power management.
06035C104KAT2A
KYOCERA AVX
06035C104KAT2A by KYOCERA AVX is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications requiring compact size and reliable performance in various electronic circuits.
1N5819HW-7-F
1N5819HW-7-F by Diodes Inc. is a Schottky rectifier diode with 40V reverse test voltage, 1A output current, and 0.75V forward voltage. It's a surface mount device in a small outline package ideal for efficiency applications at temperatures ranging from -65 to 125°C.
SMBJ18CA
Protek Devices
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2MBI300U2B-060-50
Fuji Electric
Fuji Electric's 2MBI300U2B-060-50 IGBT features N-CHANNEL polarity, SERIES CONNECTED configuration with 2 elements & built-in diode. Ideal for POWER CONTROL applications with max VCEsat of 2.45V and IC of 300A. Operates at up to 150°C, offering fast turn-off time (toff) of 480ns and turn-on time (ton) of 400ns.
IKW25N120T2FKSA1
Infineon Technologies
IKW25N120T2FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 50A IC, and 504ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE and SILICON transistor element material. Package style is FLANGE MOUNT with THROUGH-HOLE terminals.
IKD06N65ET6ARMA1
Insulated Gate Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
IXGH24N170
IXYS Corporation
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 50 A; Maximum Collector-Emitter Voltage: 1700 V;
IGW40N120H3FKSA1
IGW40N120H3FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 80A max collector current, and 414ns nominal turn off time. Ideal for power control applications, this transistor features a single configuration in a rectangular package with through-hole terminals.
FP100R06KE3BOSA1
FP100R06KE3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V. It has a nominal turn-off time of 820ns and a nominal turn-on time of 170ns. This IGBT is commonly used in applications requiring high power switching, such as motor drives and power supplies.
FP25R12W2T4B11BOMA1
FP25R12W2T4B11BOMA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 39A max collector current. It has a complex configuration, 7 elements, and is used for power control applications. With a nominal turn-off time of 520ns and turn-on time of 47ns, it features a rectangular package style with flange mount.
SGL160N60UFDTU
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 160 A; Terminal Position: SINGLE;
IXYP20N65C3D1M
Littelfuse
IXYP20N65C3D1M by Littelfuse is an N-CHANNEL IGBT with 650V VCE, 18A IC, and 2.5V VCEsat. Ideal for POWER CONTROL applications, it features a single configuration with built-in diode and operates b/w -55 to 175 °C temperature range.
FB30R06W1E3BOMA1
Infineon Technologies' FB30R06W1E3BOMA1 is an N-CHANNEL IGBT with 6 elements, max. collector-emitter voltage of 600V, and max. collector current of 39A. It has a nominal turn-off time of 245ns and turn-on time of 42ns, suitable for applications requiring high power switching like motor drives and inverters at up to 175°C operating temperature.
FGL60N100BNTDTU
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 60 A; Package Body Material: PLASTIC/EPOXY;
IKW15T120FKSA1
IKW15T120FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1200V and current of 30A. It has a turn-off time of 720ns and turn-on time of 85ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals and operates at temperatures up to 150°C.
NGTB03N60R2DT4G
NGTB03N60R2DT4G by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and IC of 9A, ideal for power control applications. It features a built-in diode, small outline package style, and can operate at temperatures up to 175°C. This transistor has a turn-off time of 105ns and is designed for surface mount assembly with gull wing terminals.
STGWT40HP65FB
STGWT40HP65FB by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V, IC of 80A, and Pmax of 283W. Ideal for power control applications, it has a toff of 202ns and ton of 169ns. Suitable for high-power systems operating b/w -55°C to 175°C.
IKW40N120CS6XKSA1
IKW40N120CS6XKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 80A IC, and 2.15V VCEsat. Ideal for POWER CONTROL applications due to its 500W power dissipation, -40 to 175°C operating temp range, and fast switching times of 65ns (ton) and 445ns (toff).
FF600R12ME4B11BPSA2
IXXX160N65C4
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 940 W; Maximum Collector Current (IC): 290 A; Maximum Collector-Emitter Voltage: 650 V; Maximum Operating Temperature: 175 Cel;
APT65GP60JDQ2
Microchip Technology
APT65GP60JDQ2 by Microchip Technology is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 130A. It has a nominal turn-off time of 220ns and is designed for power control applications. The transistor comes in a rectangular package style with flange mount, making it suitable for high-power dissipation up to 431W at an operating temperature of 150°C.
IKW30N60DTPXKSA1
IKW30N60DTPXKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 1.8V, IC of 53A, and Pmax of 200W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 279ns and high operating temperature range (-40 to 175°C).
BSM75GB120DN2
Siemens
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 105 A; Nominal Turn Off Time (toff): 450 ns; Nominal Turn On Time (ton): 30 ns;
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FF600R12ME4B72BOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 995 A; No. of Elements: 2; Peak Reflow Temperature (C): NOT SPECIFIED;
FF600R12ME4EB11BOSA1
N-CHANNEL; Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector-Emitter Voltage: 1200 V; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel;
FF600R12ME4BOSA1
Infineon's FF600R12ME4BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a VCEsat of 2.1V, IC of 995A, and Pmax of 4050W. Ideal for POWER CONTROL applications due to its fast ton of 310ns and toff of 770ns at max VCE of 1200V.
FF600R12ME4B11BPSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 995 A; No. of Elements: 2; Package Body Material: UNSPECIFIED;
FF600R12ME4PB11BOSA1
Infineon's FF600R12ME4PB11BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, featuring VCEsat of 2.1V and toff of 770ns. Ideal for POWER CONTROL applications, it operates up to 1200V at temperatures from -40°C to 150°C.
FF600R12ME4AB11BOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 3350 W; Maximum Collector Current (IC): 950 A; Reference Standard: UL RECOGNIZED;
FF600R17ME4BOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 950 A; Transistor Application: POWER CONTROL; Terminal Form: UNSPECIFIED;
FF600R12KE4EBOSA1
FF600R12KE4EBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 elements, built-in diode, and a max voltage of 1200V. It has a turn-off time of 630ns and turn-on time of 232ns, making it ideal for power control applications. This UL approved transistor operates from -40°C with a common emitter configuration in a rectangular package style.
FF600R12IP4BOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector-Emitter Voltage: 1200 V; JESD-30 Code: R-XUFM-X7; Maximum Operating Temperature: 175 Cel;
FF600R12IE4BOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 3350 W; Maximum Collector Current (IC): 600 A; Terminal Position: UPPER;
FF600R06ME3BOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 700 A; Terminal Form: UNSPECIFIED; Maximum Collector-Emitter Voltage: 600 V;
FF600R12KE4BOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-XUFM-X7; Peak Reflow Temperature (C): NOT SPECIFIED; Nominal Turn On Time (ton): 232 ns;
FF600R07ME4B11BPSA1
Insulated Gate Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
FF600R17ME4PB11BOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 950 A; Package Style (Meter): FLANGE MOUNT; Terminal Form: UNSPECIFIED;
FF600R12IP4V
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 3350 W; Maximum Collector-Emitter Voltage: 1200 V; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
FF600R07ME4P_B11
N-Channel; Maximum Power Dissipation (Abs): 1800 W; Maximum Collector Current (IC): 700 A; Maximum Operating Temperature: 150 Cel; Maximum Collector-Emitter Voltage: 650 V; Nominal Turn Off Time (toff): 570 ns;
FF600R12IP4VBOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 3350 W; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Peak Reflow Temperature (C): NOT SPECIFIED;
FF600R12IS4F
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 3700 W; Maximum Collector Current (IC): 600 A; Maximum Collector-Emitter Voltage: 1200 V;
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