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IXGH6N170

Littelfuse

IXGH6N170 by Littelfuse

IXGH6N170 by Littelfuse is an N-CHANNEL IGBT with 1700V max collector-emitter voltage, 12A max collector current, and 75W max power dissipation. Ideal for motor control applications due to its single configuration and 600ns nominal turn off time.

Median Price

$12.970

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Mouser Electronics

USA . 233 parts In-Stock

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$7.460

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Nova Conductors

Japan . 150 parts In-Stock

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Vyrian

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Aztec Data Supply Inc.

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$0.305

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AZTECH Wire

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Netroflash

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Advanced Electronics

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Microchip USA

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iodParts Technologies Inc.

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Overview

Unlock the power of advanced technology with the IXGH6N170 from Littelfuse. As a leading manufacturer in the industry, Littelfuse delivers top-quality Insulated Gate Bipolar Transistors (IGBT) for MOTOR CONTROL applications. The IXGH6N170 offers unparalleled performance and reliability, with a maximum collector-emitter voltage of 1700V and a maximum collector current of 12A. Trust Littelfuse to provide cutting-edge solutions that meet your needs and exceed your expectations. Upgrade your systems today with the IXGH6N170 and experience the difference that superior technology can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation properties and durability for the IGBT, making it suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs tend to have lower conduction losses and higher efficiency, making them a preferred choice for motor control applications.

Transistor Application: MOTOR CONTROL

Specifically designed for motor control applications, ensuring reliable performance and efficiency in controlling motors.

Maximum Power Dissipation (Abs): 75 W

With a high power dissipation capability of 75W, this IGBT can handle higher loads and operate under challenging conditions.

Maximum Collector-Emitter Voltage: 1700 V

High collector-emitter voltage rating allows the IGBT to handle high voltage operations, ensuring safe and reliable performance.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXGH6N170 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1700 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

600 ns

Nominal Turn On Time (ton):

85 ns

Trade Compliance

IXGH6N170 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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