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IXA17IF1200HJ

Littelfuse

IXA17IF1200HJ by Littelfuse

IXA17IF1200HJ by Littelfuse is an N-CHANNEL IGBT with 1200V VCEsat, 28A IC, and 100W power dissipation. Ideal for power control applications, it features a built-in diode, -40 to 150 °C operating temp range, and fast switching times of 110ns turn on and 350ns turn off.

Median Price

$12.772

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Distrelec

Netherlands . 145 parts In-Stock

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$7.997

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$7.751

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$7.300

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$7.997

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$7.300

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Mouser Electronics

USA . 371 parts In-Stock

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$14.450

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$9.880

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$8.510

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371

$14.450

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DigiKey

USA . 300 parts In-Stock

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$16.050

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$9.891

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$8.517

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300

$16.050

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$8.517

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TTI Europe

Germany . 300 parts In-Stock

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$11.095

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Nova Conductors

Japan . 96 parts In-Stock

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$6.720

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Continental Prestige Electronics

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$6.586

1,726

$6.720

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Netroflash

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$6.720

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$6.586

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Ampacity Inc.

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$6.800

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Component Stockers USA

USA . 92 parts In-Stock

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$9.550

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$8.620

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Microchip USA

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Overview

Littelfuse presents the IXA17IF1200HJ, a high-quality Insulated Gate Bipolar Transistor (IGBT) designed for power control applications. With a maximum Collector-Emitter Voltage of 1200V and maximum Collector Current of 28A, this N-CHANNEL transistor offers efficient performance and reliability. Its single configuration with built-in diode makes it a versatile choice for various projects. Trust Littelfuse's expertise in semiconductor manufacturing to deliver top-notch products that provide value and benefits to customers seeking superior power control solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside, ensuring long-lasting performance.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs generally have lower on-state voltage drop and higher switching speeds, making them efficient for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and enhances reliability by protecting against reverse voltage spikes.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring optimal performance in controlling power flow.

Maximum VCEsat: 2.1 V

Low VCEsat minimizes power loss and improves efficiency in power switching applications.

Package Shape: RECTANGULAR

Rectangular shape allows for easy installation and compact integration into electronic systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering for robust circuitry.

Nominal Turn Off Time (toff): 350 ns

Fast turn-off time enables quick switching and enhances the overall performance of the IGBT.

Maximum Power Dissipation (Abs): 100 W

High power dissipation capability allows the IGBT to handle heavy loads and high power applications.

Package Style (Meter): IN-LINE

In-line package style facilitates convenient placement and connections in electronic circuits.

Maximum Operating Temperature: 150 °C

High operating temperature range ensures reliability and stability under extreme conditions.

Maximum Collector-Emitter Voltage: 1200 V

High breakdown voltage capability makes it suitable for applications requiring high voltage handling.

Transistor Element Material: SILICON

Silicon material offers good thermal conductivity and high temperature tolerance for efficient performance.

Maximum Gate-Emitter Voltage: 20 V

High gate-emitter voltage rating provides robust protection against voltage spikes and ensures reliable operation.

Minimum Operating Temperature: -40 °C

Wide operating temperature range allows for use in harsh environmental conditions with stability and reliability.

Maximum Collector Current (IC): 28 A

High collector current rating enables handling of high current loads effectively.

Maximum Gate-Emitter Threshold Voltage: 6.5 V

Gate-emitter threshold voltage helps in efficient switching and control of the IGBT.

Terminal Position: SINGLE

Single terminal position simplifies installation and connections, ensuring ease of use in circuit designs.

Case Connection: ISOLATED

Isolated case connection enhances safety and protection by isolating the device from external electrical components.

Nominal Turn On Time (ton): 110 ns

Fast turn-on time ensures quick response and efficient switching for enhanced performance.

Reference Standard: IEC-60747

Compliance with international standards ensures quality, reliability, and interoperability in various applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXA17IF1200HJ attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

IEC-60747

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

350 ns

Nominal Turn On Time (ton):

110 ns

Maximum VCEsat:

2.1 V

Trade Compliance

IXA17IF1200HJ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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