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FGH40N60SFDTU

Onsemi

FGH40N60SFDTU by Onsemi

FGH40N60SFDTU by Onsemi is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. It has a 90ns fall time, 170ns turn off time, and can handle up to 290W power dissipation. Ideal for power control applications requiring high voltage and current handling capabilities.

Median Price

$2.960

Lifecycle Status

Suppliers In-Stock

21

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 285 parts In-Stock

1+ parts

$2.960

100+ parts

$2.780

1k+ parts

$2.520

10k+ parts

-

285

$2.960

$2.780

$2.520

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Mouser Electronics

USA . 977 parts In-Stock

1+ parts

$5.060

100+ parts

-

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$2.150

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977

$5.060

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$2.150

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DigiKey

USA . 285 parts In-Stock

1+ parts

$5.060

100+ parts

$2.831

1k+ parts

$1.980

10k+ parts

$1.859

285

$5.060

$2.831

$1.980

$1.859

Verical

USA . 580 parts In-Stock

1+ parts

-

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-

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$2.006

10k+ parts

$1.958

580

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$2.006

$1.958

Master Electronics

USA . 450 parts In-Stock

1+ parts

-

100+ parts

$1.780

1k+ parts

$1.650

10k+ parts

$1.600

450

-

$1.780

$1.650

$1.600

Distributors (In-Stock)

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Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$2.703

100+ parts

-

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300

$2.703

-

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IBS Electronics

USA . 450 parts In-Stock

1+ parts

$2.735

100+ parts

-

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$2.777

10k+ parts

$2.777

450

$2.735

-

$2.777

$2.777

Digiode

USA . 1,104 parts In-Stock

1+ parts

$2.812

100+ parts

-

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1,104

$2.812

-

-

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TME

Poland . 147 parts In-Stock

1+ parts

$4.720

100+ parts

$2.890

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-

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147

$4.720

$2.890

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Flip Electronics

USA . 14,400 parts In-Stock

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-

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14,400

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Chip Stock

USA . 8,700 parts In-Stock

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8,700

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Cyclops Electronics Ltd

UK . 6,588 parts In-Stock

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6,588

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NAC Semi

USA . 180 parts In-Stock

1+ parts

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100+ parts

$11.190

1k+ parts

$10.360

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180

-

$11.190

$10.360

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Vyrian

USA . 117 parts In-Stock

1+ parts

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117

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Micros

Poland . 90 parts In-Stock

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100+ parts

$3.330

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90

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$3.330

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Partservice

France . 60 parts In-Stock

1+ parts

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100+ parts

$3.284

1k+ parts

$3.255

10k+ parts

$3.255

60

-

$3.284

$3.255

$3.255

ACDS - Activité Composants Distribution Service

France . 55 parts In-Stock

1+ parts

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55

-

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Bristol Electronics

USA . 55 parts In-Stock

1+ parts

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100+ parts

$1.944

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55

-

$1.944

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Dan-Mar Components

USA . 55 parts In-Stock

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55

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Lakeland Logistics Inc

USA . 54 parts In-Stock

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54

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Micros sp.j. W. Kędra i J. Lic

Poland . 46 parts In-Stock

1+ parts

-

100+ parts

$3.518

1k+ parts

$3.486

10k+ parts

$3.486

46

-

$3.518

$3.486

$3.486

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 4,742 parts In-Stock

1+ parts

$1.592

100+ parts

-

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4,742

$1.592

-

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Ampacity Inc.

Singapore . 595 parts In-Stock

1+ parts

$2.520

100+ parts

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595

$2.520

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Semicontronic

India . 133 parts In-Stock

1+ parts

$2.520

100+ parts

$2.457

1k+ parts

$2.444

10k+ parts

-

133

$2.520

$2.457

$2.444

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Corohmni

South Africa . 357 parts In-Stock

1+ parts

$2.596

100+ parts

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357

$2.596

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Aranea Global

USA . 500 parts In-Stock

1+ parts

$2.649

100+ parts

-

1k+ parts

$2.543

10k+ parts

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500

$2.649

-

$2.543

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Corphita

USA . 1,694 parts In-Stock

1+ parts

$2.664

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1,694

$2.664

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Continental Prestige Electronics

USA . 3,405 parts In-Stock

1+ parts

$2.703

100+ parts

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1k+ parts

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$2.649

3,405

$2.703

-

-

$2.649

Argo Parts USA

USA . 2,999 parts In-Stock

1+ parts

$2.703

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2,999

$2.703

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Perfect Parts

USA . 189,799 parts In-Stock

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189,799

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Metaverse IC Inc.

Canada . 80,000 parts In-Stock

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Kepictronics

USA . 23,000 parts In-Stock

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23,000

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QUARKTWIN TECHNOLOGY LTD

USA . 22,186 parts In-Stock

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22,186

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GreenTree Electronics

Israel . 9,019 parts In-Stock

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9,019

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Authorized Procurement Solutions

USA . 8,940 parts In-Stock

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8,940

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TANS Electronics

Latvia . 8,200 parts In-Stock

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8,200

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RC Electronics

USA . 7,883 parts In-Stock

1+ parts

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100+ parts

$2.920

1k+ parts

$2.660

10k+ parts

$2.580

7,883

-

$2.920

$2.660

$2.580

Microchip USA

USA . 7,366 parts In-Stock

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7,366

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Lixinc

USA . 5,178 parts In-Stock

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5,178

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Supply Digital

USA . 2,637 parts In-Stock

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2,637

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Problanco Electronics

Mexico . 1,371 parts In-Stock

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1,371

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Kulean Microsystems

USA . 1,171 parts In-Stock

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1,171

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UHIMA Technologies

Türkiye . 797 parts In-Stock

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797

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SupplyDigital Components

Austria . 719 parts In-Stock

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719

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Cyclops Electronics Ltd (Excess)

UK . 144 parts In-Stock

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144

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Eastek

USA . 90 parts In-Stock

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Formix International (Excess)

India . 10 parts In-Stock

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10

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Overview

Experience the superior quality and reliability of Onsemi with the FGH40N60SFDTU Insulated Gate Bipolar Transistor. Perfect for power control applications, this N-CHANNEL transistor offers a single configuration with a built-in diode for added convenience. With a maximum collector-emitter voltage of 600V and a maximum power dissipation of 290W, this transistor provides exceptional performance and durability. Trust in Onsemi's reputation for excellence and innovation with the FGH40N60SFDTU, delivering value and benefits that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides insulation and protection for the internal components, ensuring reliable performance and longevity.

Polarity or Channel Type: N-CHANNEL

Offers efficient power control capabilities and allows for versatile use in various applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space by integrating a diode within the transistor.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring optimal performance in controlling electrical power.

Maximum Fall Time (tf): 90 ns

Fast fall time enables quick switching and efficient power management in high-speed applications.

Nominal Turn Off Time (toff): 170 ns

Ensures rapid turn-off and minimal power loss during switching transitions.

No. of Terminals: 3

Simplifies the connection process and helps in easy integration within electronic circuits.

Maximum Power Dissipation (Abs): 290 W

High power dissipation capability allows for handling heavy loads and high-power applications.

Package Style (Meter): FLANGE MOUNT

Enables secure and easy mounting of the transistor in various equipment and systems.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for use in demanding environments.

Maximum Collector-Emitter Voltage: 600 V

High voltage rating enables the transistor to handle large voltage differences in circuits.

Transistor Element Material: SILICON

Provides excellent electrical properties and reliability, ensuring consistent performance over time.

Maximum Gate-Emitter Voltage: 20 V

Safe and reliable gate-emitter voltage rating for proper operation and protection of the transistor.

Maximum Collector Current (IC): 80 A

High current handling capability for efficient power control and management.

Maximum Gate-Emitter Threshold Voltage: 6.5 V

Optimal threshold voltage for reliable switching and control of the transistor.

Terminal Finish: MATTE TIN

Durable terminal finish for secure connections and corrosion resistance.

Terminal Position: SINGLE

Simplified terminal configuration for easy integration and use within electronic circuits.

Case Connection: COLLECTOR

Specific case connection for efficient power transmission and control.

Nominal Turn On Time (ton): 108 ns

Fast turn-on time for quick response and efficient power switching.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGH40N60SFDTU attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Fall Time (tf):

90 ns

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

170 ns

Nominal Turn On Time (ton):

108 ns

Trade Compliance

FGH40N60SFDTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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