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RGW80TS65CHRC11

ROHM

RGW80TS65CHRC11 by ROHM

ROHM RGW80TS65CHRC11 is an N-CHANNEL IGBT with VCEsat of 1.9V and IC of 81A, ideal for POWER CONTROL applications. It has a max VCE of 650V and turn-off time of 185ns, suitable for high-power systems. The transistor operates b/w -40 to 175°C, making it versatile in various environments.

Median Price

$14.400

Lifecycle Status

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Farnell

UK . 20 parts In-Stock

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$11.110

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$11.110

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Newark

USA . 20 parts In-Stock

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$13.940

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$7.620

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$7.460

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20

$13.940

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$7.460

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Chip1Stop

Japan . 40 parts In-Stock

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$14.400

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$8.350

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$7.570

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$7.100

40

$14.400

$8.350

$7.570

$7.100

Mouser Electronics

USA . 443 parts In-Stock

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$14.490

100+ parts

$8.530

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443

$14.490

$8.530

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DigiKey

USA . 357 parts In-Stock

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$14.490

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$8.850

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$7.463

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357

$14.490

$8.850

$7.463

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Element14

Singapore . 30 parts In-Stock

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$19.340

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$11.160

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$10.670

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30

$19.340

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$10.670

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RS (Exports)

UK . 26 parts In-Stock

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$12.347

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Verical

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Nova Conductors

Japan . 870 parts In-Stock

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$9.117

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$9.117

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Vyrian

USA . 3,336 parts In-Stock

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Semtec, LLC

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ACDS - Activité Composants Distribution Service

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Aranea Global

USA . 1,000 parts In-Stock

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$8.935

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$8.577

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$8.935

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$8.577

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Ampacity Inc.

Singapore . 122 parts In-Stock

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$10.490

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$10.490

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Semicontronic

India . 122 parts In-Stock

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$10.490

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$10.228

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$10.175

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$10.175

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CoreStaff

Japan . 19 parts In-Stock

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$11.193

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$5.373

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Continental Prestige Electronics

USA . 30 parts In-Stock

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$11.480

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$8.350

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AZTECH Wire

Italy . 345 parts In-Stock

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$18.623

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Microchip USA

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$37.212

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Argo Parts USA

USA . 4,641 parts In-Stock

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Overview

Elevate your power control capabilities with the RGW80TS65CHRC11 by ROHM. As a trusted manufacturer in the industry, ROHM delivers top-quality Insulated Gate Bipolar Transistors that offer unparalleled performance and reliability. Ideal for a wide range of applications, this N-channel transistor with a built-in diode ensures seamless power control. With a maximum VCEsat of 1.9V and a maximum collector-emitter voltage of 650V, this transistor is designed to meet your power needs efficiently. Trust ROHM to provide you with innovative solutions that enhance your projects and deliver exceptional value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and protects the transistor from external elements, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

Offers high efficiency and fast switching speed, making it suitable for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space by integrating a diode within the transistor package.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring optimal performance in such scenarios.

Maximum VCEsat: 1.9 V

Low VCEsat helps in reducing power losses and improving efficiency of the circuit.

Package Shape: RECTANGULAR

Facilitates easy mounting and handling of the transistor in various applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connection and easy soldering for secure and reliable connections.

Nominal Turn Off Time (toff): 185 ns

Fast turn-off time enhances switching speed and efficiency of the transistor.

Maximum Power Dissipation (Abs): 214 W

High power dissipation capability allows the transistor to handle heavy loads without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package provides better thermal conductivity and heat dissipation, improving overall performance.

Maximum Operating Temperature: 175 °C

Wide operating temperature range ensures reliable operation in varying environmental conditions.

Maximum Collector-Emitter Voltage: 650 V

High VCE voltage rating allows the transistor to handle high voltage applications safely and efficiently.

Transistor Element Material: SILICON

Silicon material offers high temperature tolerance and reliability, making the transistor suitable for demanding applications.

Maximum Gate-Emitter Voltage: 30 V

High gate-emitter voltage rating ensures stable and precise control over the transistor's switching behavior.

Minimum Operating Temperature: -40 °C

Wide temperature range allows the transistor to operate in extreme cold conditions without performance degradation.

Maximum Collector Current (IC): 81 A

High collector current rating enables the transistor to handle heavy current loads without failure.

Maximum Gate-Emitter Threshold Voltage: 7 V

Optimal gate-emitter threshold voltage ensures that the transistor remains in the desired state during operation.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection of the transistor in circuits.

Nominal Turn On Time (ton): 54 ns

Fast turn-on time improves response time of the transistor, enhancing overall circuit performance.

Reference Standard: AEC-Q101

Meets automotive quality standards, ensuring reliability and durability in automotive power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) RGW80TS65CHRC11 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

30 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

185 ns

Nominal Turn On Time (ton):

54 ns

Maximum VCEsat:

1.9 V

Trade Compliance

RGW80TS65CHRC11 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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