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RGW80TS65EHRC11

ROHM

RGW80TS65EHRC11 by ROHM

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; Maximum Collector Current (IC): 80 A; Maximum Gate-Emitter Voltage: 30 V;

Median Price

$8.270

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 30 parts In-Stock

1+ parts

$6.790

100+ parts

$4.760

1k+ parts

$4.380

10k+ parts

-

30

$6.790

$4.760

$4.380

-

Chip1Stop

Japan . 60 parts In-Stock

1+ parts

$7.470

100+ parts

$5.020

1k+ parts

$3.330

10k+ parts

-

60

$7.470

$5.020

$3.330

-

Mouser Electronics

USA . 450 parts In-Stock

1+ parts

$8.270

100+ parts

$5.760

1k+ parts

$3.970

10k+ parts

-

450

$8.270

$5.760

$3.970

-

Newark

USA . 30 parts In-Stock

1+ parts

$8.580

100+ parts

$5.920

1k+ parts

$3.970

10k+ parts

-

30

$8.580

$5.920

$3.970

-

DigiKey

USA . 450 parts In-Stock

1+ parts

$8.950

100+ parts

-

1k+ parts

$3.974

10k+ parts

-

450

$8.950

-

$3.974

-

Element14

Singapore . 30 parts In-Stock

1+ parts

$11.150

100+ parts

$7.820

1k+ parts

$7.510

10k+ parts

-

30

$11.150

$7.820

$7.510

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Verical

USA . 60 parts In-Stock

1+ parts

-

100+ parts

$5.620

1k+ parts

-

10k+ parts

-

60

-

$5.620

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semtec, LLC

USA . 30 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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30

-

-

-

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ACDS - Activité Composants Distribution Service

France . 30 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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30

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

CoreStaff

Japan . 10 parts In-Stock

1+ parts

$7.366

100+ parts

$2.783

1k+ parts

-

10k+ parts

-

10

$7.366

$2.783

-

-

Microchip USA

USA . 5,738 parts In-Stock

1+ parts

$22.456

100+ parts

-

1k+ parts

-

10k+ parts

-

5,738

$22.456

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-

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) RGW80TS65EHRC11 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

30 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

254 ns

Nominal Turn On Time (ton):

51 ns

Maximum VCEsat:

1.9 V

Trade Compliance

RGW80TS65EHRC11 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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