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IRGPS60B120KDP

Infineon Technologies

IRGPS60B120KDP by Infineon Technologies

IRGPS60B120KDP by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max gate-emitter voltage of 20V. It is commonly used in motor control applications due to its single configuration with built-in diode.

Median Price

$21.420

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Newark

USA . 137 parts In-Stock

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$21.420

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$16.870

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$15.320

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137

$21.420

$16.870

$15.320

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Nova Conductors

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$19.058

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TME

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$19.240

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$14.150

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Digiode

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Bristol Electronics

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LIBRA Elektronik GmbH

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Vyrian

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Aztec Data Supply Inc.

USA . 2,191 parts In-Stock

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$1.510

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$1.510

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Modulus Dynamics

Lithuania . 14,431 parts In-Stock

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$1.750

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$1.680

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$1.610

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Corohmni

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Advanced Electronics

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$1.913

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$1.724

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$9.403

AZTECH Wire

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$17.755

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Aranea Global

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Corphita

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Component Stockers USA

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Perfect Parts

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Glotronic Ltd.

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Israel . 73 parts In-Stock

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Overview

Discover the power of Infineon Technologies' IRGPS60B120KDP Insulated Gate Bipolar Transistor (IGBT). Designed with precision and crafted for excellence, this N-channel transistor offers unmatched quality and reliability. Perfect for motor control applications, its single configuration with a built-in diode ensures seamless performance and efficiency. With a maximum operating temperature of 150°C and a collector-emitter voltage of 1200V, this IGBT delivers exceptional power while maintaining optimal functionality. Experience the future of technology with Infineon Technologies and unlock a world of possibilities with the IRGPS60B120KDP.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components of the IGBT, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower on-state resistance and better performance compared to P-channel IGBTs, making them ideal for high power applications like motor control.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easier and more efficient circuit design, reducing external components and enhancing overall performance.

Transistor Application: MOTOR CONTROL

Specifically designed for motor control applications, ensuring optimized performance and efficiency for controlling motors.

Maximum Rise Time (tr): 45 ns

Fast rise time allows for quick switching transitions, essential for high frequency applications and reducing power losses.

Maximum Fall Time (tf): 58 ns

Fast fall time ensures quick turn-off transitions, improving efficiency and reducing heat generation in the IGBT.

Nominal Turn Off Time (toff): 411 ns

The nominal turn off time indicates the time taken for the IGBT to completely turn off, crucial for precise control and preventing current spikes.

Maximum Power Dissipation (Abs): 595 W

High power dissipation rating allows for handling large amounts of power without overheating, ensuring long-term reliability.

Maximum Collector-Emitter Voltage: 1200 V

High collector-emitter voltage rating enables the IGBT to handle high voltage levels, making it suitable for a wide range of applications.

Maximum Gate-Emitter Voltage: 20 V

The maximum gate-emitter voltage defines the voltage that can safely be applied to the gate terminal, preventing damage and ensuring proper functioning.

Maximum Collector Current (IC): 105 A

High collector current rating allows for handling high current loads, making it suitable for applications requiring high power output.

Nominal Turn On Time (ton): 104 ns

Fast turn-on time ensures quick switching transitions, essential for high frequency applications and efficient motor control.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IRGPS60B120KDP attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Fall Time (tf):

58 ns

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-274AA

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Rise Time (tr):

45 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

411 ns

Nominal Turn On Time (ton):

104 ns

Trade Compliance

IRGPS60B120KDP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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