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IKW75N65EL5XKSA1

Infineon Technologies

IKW75N65EL5XKSA1 by Infineon Technologies

IKW75N65EL5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 474ns toff. Ideal for POWER CONTROL applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. The transistor has a RECTANGULAR shape with THROUGH-HOLE terminals for FLANGE MOUNT installation.

Median Price

$5.550

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

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Arrow

USA . 130 parts In-Stock

1+ parts

$3.868

100+ parts

$3.467

1k+ parts

$3.280

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130

$3.868

$3.467

$3.280

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Chip1Stop

Japan . 240 parts In-Stock

1+ parts

$4.480

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240

$4.480

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Farnell

UK . 130 parts In-Stock

1+ parts

$5.780

100+ parts

$3.090

1k+ parts

$2.670

10k+ parts

-

130

$5.780

$3.090

$2.670

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DigiKey

USA . 1,680 parts In-Stock

1+ parts

$7.450

100+ parts

$4.298

1k+ parts

$3.117

10k+ parts

-

1,680

$7.450

$4.298

$3.117

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Newark

USA . 190 parts In-Stock

1+ parts

$7.840

100+ parts

$4.880

1k+ parts

$4.480

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190

$7.840

$4.880

$4.480

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Element14

Singapore . 130 parts In-Stock

1+ parts

$9.640

100+ parts

$5.250

1k+ parts

$4.450

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130

$9.640

$5.250

$4.450

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Rochester

USA . 3,610 parts In-Stock

1+ parts

-

100+ parts

$3.000

1k+ parts

$2.690

10k+ parts

$2.530

3,610

-

$3.000

$2.690

$2.530

Avnet

USA . 270 parts In-Stock

1+ parts

-

100+ parts

$3.242

1k+ parts

$2.991

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270

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$3.242

$2.991

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Verical

USA . 240 parts In-Stock

1+ parts

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240

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Future Electronics

Canada . 200 parts In-Stock

1+ parts

-

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$5.550

1k+ parts

$5.440

10k+ parts

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200

-

$5.550

$5.440

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Distributors (In-Stock)

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Digiode

USA . 326 parts In-Stock

1+ parts

$3.363

100+ parts

-

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326

$3.363

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Maritex

Poland . 749 parts In-Stock

1+ parts

$5.366

100+ parts

-

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749

$5.366

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$6.530

100+ parts

-

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50

$6.530

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Chip Stock

USA . 5,770 parts In-Stock

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5,770

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Vyrian

USA . 4,990 parts In-Stock

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4,990

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IBS Electronics

USA . 200 parts In-Stock

1+ parts

-

100+ parts

$7.784

1k+ parts

$7.321

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200

-

$7.784

$7.321

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Prism Electronics

USA . 27 parts In-Stock

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27

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 14,858 parts In-Stock

1+ parts

$0.812

100+ parts

$0.780

1k+ parts

$0.747

10k+ parts

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14,858

$0.812

$0.780

$0.747

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Semicontronic

India . 790 parts In-Stock

1+ parts

$3.010

100+ parts

$2.935

1k+ parts

$2.920

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790

$3.010

$2.935

$2.920

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Ampacity Inc.

Singapore . 729 parts In-Stock

1+ parts

$3.010

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729

$3.010

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Corphita

USA . 151 parts In-Stock

1+ parts

$3.186

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151

$3.186

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$6.530

100+ parts

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$6.204

10k+ parts

$6.073

2,000

$6.530

-

$6.204

$6.073

Continental Prestige Electronics

USA . 199 parts In-Stock

1+ parts

$8.070

100+ parts

$5.590

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199

$8.070

$5.590

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Microchip USA

USA . 9,721 parts In-Stock

1+ parts

$28.588

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9,721

$28.588

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QUARKTWIN TECHNOLOGY LTD

USA . 13,943 parts In-Stock

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Argo Parts USA

USA . 2,074 parts In-Stock

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2,074

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Glotronic Ltd.

UK . 360 parts In-Stock

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Perfect Parts

USA . 291 parts In-Stock

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iodParts Technologies Inc.

India . 213 parts In-Stock

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$7.619

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213

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$7.619

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Overview

Unlock the power of Infineon Technologies with the IKW75N65EL5XKSA1 Insulated Gate Bipolar Transistor. Known for their superior quality and reliability, Infineon products are trusted by industry professionals worldwide. Ideal for power control applications, this N-CHANNEL transistor offers a single configuration with a built-in diode for seamless integration. With a maximum collector-emitter voltage of 650V and a nominal turn-off time of 474ns, this transistor provides optimal performance and efficiency. Experience the benefits of Infineon's cutting-edge technology and bring your projects to the next level with the IKW75N65EL5XKSA1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

Allows for efficient power control and switching capabilities in the circuit.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and eliminates the need for an external diode, making installation easier.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring optimal performance and efficiency.

Package Shape: RECTANGULAR

Enables easy mounting and installation in various electronic devices and systems.

Terminal Form: THROUGH-HOLE

Enables secure and stable connections on the PCB, reducing the risk of disconnection or short circuits.

Nominal Turn Off Time (toff): 474 ns

Fast turn-off time allows for quick switching and efficient control of power flow in the circuit.

No. of Terminals: 3

Simple and straightforward connection setup, reducing complexity in circuit design.

Package Style (Meter): FLANGE MOUNT

Allows for easy and secure mounting on a flange, ensuring stability and reliability in operation.

Maximum Collector-Emitter Voltage: 650 V

High voltage handling capability makes it suitable for applications requiring voltage regulation and control.

Transistor Element Material: SILICON

Silicon material provides high performance, temperature stability, and durability for long-term use.

Maximum Collector Current (IC): 80 A

High current rating allows for handling of large power loads, suitable for high-power applications.

Terminal Finish: TIN

Tin finish on terminals provides good conductivity and corrosion resistance for reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies the connection setup and ensures proper orientation during installation.

Nominal Turn On Time (ton): 53 ns

Fast turn-on time enables quick response and efficient power switching in the circuit.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IKW75N65EL5XKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

474 ns

Nominal Turn On Time (ton):

53 ns

Trade Compliance

IKW75N65EL5XKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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