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APT50GP60BG

Microchip Technology

APT50GP60BG by Microchip Technology

APT50GP60BG by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 202ns and a turn-on time of 55ns, making it ideal for power control applications. The transistor comes in a rectangular package style with through-hole terminals and operates at temperatures up to 150°C.

Median Price

$12.840

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip Technology

USA . 32 parts In-Stock

1+ parts

$12.840

100+ parts

$11.100

1k+ parts

$10.180

10k+ parts

$9.830

32

$12.840

$11.100

$10.180

$9.830

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$11.360

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-

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300

$11.360

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NAC Semi

USA . 26 parts In-Stock

1+ parts

$12.260

100+ parts

$11.120

1k+ parts

$10.170

10k+ parts

-

26

$12.260

$11.120

$10.170

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VNN

France . 1,825 parts In-Stock

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1,825

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Vyrian

USA . 1,107 parts In-Stock

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1,107

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Chip Stock

USA . 285 parts In-Stock

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285

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,322 parts In-Stock

1+ parts

$0.050

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1,322

$0.050

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Corohmni

South Africa . 124 parts In-Stock

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$0.390

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124

$0.390

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Advanced Electronics

New Zealand . 600 parts In-Stock

1+ parts

$1.729

100+ parts

$1.573

1k+ parts

$1.418

10k+ parts

-

600

$1.729

$1.573

$1.418

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$11.133

100+ parts

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$10.687

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1,000

$11.133

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$10.687

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Continental Prestige Electronics

USA . 6,401 parts In-Stock

1+ parts

$11.360

100+ parts

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$11.133

6,401

$11.360

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$11.133

AZTECH Wire

Italy . 714 parts In-Stock

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$18.264

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714

$18.264

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Microchip USA

USA . 9,860 parts In-Stock

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9,860

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West Coast Incorporated

USA . 7,968 parts In-Stock

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Argo Parts USA

USA . 103 parts In-Stock

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103

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Perfect Parts

USA . 19 parts In-Stock

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Overview

Upgrade your power control applications with the APT50GP60BG from Microchip Technology. As a leader in semiconductor solutions, Microchip Technology offers superior quality and reliability in their Insulated Gate Bipolar Transistors (IGBT). This N-CHANNEL transistor provides a fast turn on time of 55 ns and a maximum collector-emitter voltage of 600V, making it ideal for high power applications. With a single configuration and through-hole terminals, this transistor ensures easy installation and optimal performance. Trust Microchip Technology to deliver cutting-edge technology that enhances your power control systems.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides insulation and protection for the internal components, making the IGBT more durable and less prone to damage.

Polarity or Channel Type: N-CHANNEL

N-Channel IGBTs typically have lower on-state resistance and higher current carrying capabilities compared to P-Channel IGBTs, making them suitable for high-power applications.

Configuration: SINGLE

Simplifies the design and application of the IGBT, making it easier to integrate into power control systems.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring optimal performance in controlling high power loads.

Package Shape: RECTANGULAR

Rectangular shape allows for compact and space-saving installation, ideal for applications where space is limited.

Maximum Collector-Emitter Voltage: 600 V

High voltage rating allows for safe operation in high voltage applications, providing reliability and protection against voltage surges.

Maximum Collector Current (IC): 100 A

High current rating enables the IGBT to handle large amounts of current, making it suitable for high-power applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) APT50GP60BG attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Microchip Technology

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

202 ns

Nominal Turn On Time (ton):

55 ns

Trade Compliance

APT50GP60BG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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