Loading...

DF160R12W2H3FB11BPSA1

Infineon Technologies

DF160R12W2H3FB11BPSA1 by Infineon Technologies

Infineon's DF160R12W2H3FB11BPSA1 IGBT features N-CHANNEL polarity, 1200V max collector-emitter voltage, and 375ns nominal turn-off time. Ideal for power control applications with complex configuration, it has 4 elements and operates from -40°C with a 30-terminal flange mount package.

Median Price

$98.620

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 16 parts In-Stock

1+ parts

$98.620

100+ parts

$81.303

1k+ parts

-

10k+ parts

-

16

$98.620

$81.303

-

-

Arrow

USA . 6 parts In-Stock

1+ parts

$116.410

100+ parts

$116.410

1k+ parts

$116.410

10k+ parts

$116.410

6

$116.410

$116.410

$116.410

$116.410

Chip1Stop

Japan . 6 parts In-Stock

1+ parts

$117.000

100+ parts

-

1k+ parts

-

10k+ parts

-

6

$117.000

-

-

-

EBV Elektronik

Germany . 45 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

45

-

-

-

-

Rochester

USA . 13 parts In-Stock

1+ parts

-

100+ parts

$51.680

1k+ parts

$46.240

10k+ parts

$43.520

13

-

$51.680

$46.240

$43.520

Verical

USA . 11 parts In-Stock

1+ parts

-

100+ parts

$76.600

1k+ parts

$69.263

10k+ parts

-

11

-

$76.600

$69.263

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 445 parts In-Stock

1+ parts

$61.930

100+ parts

-

1k+ parts

-

10k+ parts

-

445

$61.930

-

-

-

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$125.790

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$125.790

-

-

-

Vyrian

USA . 1,937 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,937

-

-

-

-

TME

Poland . 45 parts In-Stock

1+ parts

-

100+ parts

$67.390

1k+ parts

-

10k+ parts

-

45

-

$67.390

-

-

NAC Semi

USA . 30 parts In-Stock

1+ parts

-

100+ parts

$143.390

1k+ parts

-

10k+ parts

-

30

-

$143.390

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 15,775 parts In-Stock

1+ parts

$0.636

100+ parts

$0.611

1k+ parts

$0.585

10k+ parts

-

15,775

$0.636

$0.611

$0.585

-

AZTECH Wire

Italy . 730 parts In-Stock

1+ parts

$9.644

100+ parts

-

1k+ parts

-

10k+ parts

-

730

$9.644

-

-

-

Ampacity Inc.

Singapore . 15 parts In-Stock

1+ parts

$55.410

100+ parts

-

1k+ parts

-

10k+ parts

-

15

$55.410

-

-

-

Corphita

USA . 488 parts In-Stock

1+ parts

$58.671

100+ parts

-

1k+ parts

-

10k+ parts

-

488

$58.671

-

-

-

Continental Prestige Electronics

USA . 12 parts In-Stock

1+ parts

$79.010

100+ parts

-

1k+ parts

-

10k+ parts

-

12

$79.010

-

-

-

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$125.790

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

$125.790

-

-

-

Microchip USA

USA . 8,005 parts In-Stock

1+ parts

$188.805

100+ parts

-

1k+ parts

-

10k+ parts

-

8,005

$188.805

-

-

-

Authorized Procurement Solutions

USA . 3,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,500

-

-

-

-

Argo Parts USA

USA . 1,971 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,971

-

-

-

-

Overview

Unlock the power of Infineon Technologies with the DF160R12W2H3FB11BPSA1 Insulated Gate Bipolar Transistor. As a leading manufacturer in the industry, Infineon delivers top-quality components for power control applications. With its N-CHANNEL polarity, complex configuration, and fast turn on/off times, this IGBT is designed to optimize performance and efficiency. Ideal for a wide range of uses, this product offers customers value, reliability, and superior functionality. Elevate your projects with the high-quality technology Infineon is known for.

Feature Benefit Bullets

Polarity or Channel Type N-CHANNEL

N-CHANNEL transistors are known for their high current carrying capability and efficient operation, making them suitable for power control applications.

Configuration COMPLEX

Complex configuration allows the transistor to handle multiple functions and provide advanced control capabilities, making it ideal for power control applications where complex operations are required.

Transistor Application POWER CONTROL

Specifically designed for power control applications, ensuring efficient and precise control over power flow.

Package Shape RECTANGULAR

Rectangular package shape simplifies mounting and integration into electronic circuits, providing ease of installation and space-saving benefits.

Nominal Turn Off Time (toff) 375 ns

Fast turn-off time allows for quick switching and reduces power loss, enhancing the efficiency of power control operations.

No. of Terminals 30

Having 30 terminals provides versatility in connection options and allows for complex circuit configurations, enabling greater flexibility in power control applications.

Maximum Collector-Emitter Voltage 1200 V

High maximum voltage rating ensures the transistor can handle high voltage levels without breakdown, making it suitable for high-power applications.

Transistor Element Material SILICON

Silicon-based transistors offer high reliability, low on-state losses, and good thermal stability, contributing to the overall performance and longevity of the product.

Minimum Operating Temperature -40 °C

Wide operating temperature range allows the transistor to function effectively in diverse environmental conditions, enhancing its reliability and suitability for various applications.

Nominal Turn On Time (ton) 40 ns

Fast turn-on time ensures quick response and efficient power control, enabling precise switching and operation in high-performance applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) DF160R12W2H3FB11BPSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

ISOLATED

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

JESD-30 Code:

R-XUFM-X30

No. of Elements:

4

No. of Terminals:

30

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

375 ns

Nominal Turn On Time (ton):

40 ns

Trade Compliance

DF160R12W2H3FB11BPSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 4