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RGTVX6TS65DGC11

ROHM

RGTVX6TS65DGC11 by ROHM

ROHM RGTVX6TS65DGC11 is an N-CHANNEL IGBT with 650V max collector-emitter voltage, ideal for power control applications. Featuring a single configuration with built-in diode, it has a 144A max collector current and 298ns nominal turn off time. This IGBT operates b/w -40°C to 175°C temperature range.

Median Price

$8.230

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Chip1Stop

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$5.640

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$3.430

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Farnell

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Element14

Singapore . 391 parts In-Stock

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$9.252

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$7.807

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$6.075

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DigiKey

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Verical

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$5.539

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Nova Conductors

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Vyrian

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Aztec Data Supply Inc.

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Continental Prestige Electronics

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CoreStaff

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Argo Parts USA

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Overview

Elevate your power control capabilities with the RGTVX6TS65DGC11 by ROHM, a high-quality Insulated Gate Bipolar Transistor (IGBT) designed for optimal performance and reliability. Manufactured by industry leader ROHM, this N-CHANNEL transistor boasts a single configuration with a built-in diode, making it ideal for various power control applications. With a maximum collector-emitter voltage of 650V and a maximum collector current of 144A, this IGBT offers exceptional value and benefits to customers seeking efficient and effective power management solutions. Experience the advantages of ROHM's cutting-edge technology with the RGTVX6TS65DGC11.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body provides durability and protection for the internal components, making it suitable for various industrial applications.

Polarity or Channel Type: N-CHANNEL

The N-channel polarity allows for easy integration into existing circuit designs, enhancing compatibility and flexibility in power control systems.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and saves space, making this IGBT ideal for compact power control applications.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, this IGBT delivers efficient and reliable performance in managing high levels of power.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting and installation, making it convenient for various power control systems.

Terminal Form: THROUGH-HOLE

The through-hole terminal form ensures secure connections and ease of soldering, providing stable performance in harsh operating conditions.

Nominal Turn Off Time (toff): 298 ns

With a fast turn-off time of 298 ns, this IGBT enables quick switching speeds, enhancing efficiency and reducing power loss in power control applications.

No. of Terminals: 3

The 3 terminals provide necessary connections for power control applications, ensuring proper functionality and ease of integration.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers mechanical stability and heat dissipation, improving overall performance and reliability in power control systems.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature of 175°C, this IGBT can withstand extreme heat conditions, ensuring reliable operation in harsh environments.

Maximum Collector-Emitter Voltage: 650 V

The high maximum collector-emitter voltage of 650 V enables the IGBT to handle high voltage levels, making it suitable for high-power applications.

Transistor Element Material: SILICON

The use of silicon for the transistor element provides high reliability and performance, ensuring long-term stability and efficiency in power control applications.

Minimum Operating Temperature: -40 °C

With a low minimum operating temperature of -40°C, this IGBT can operate in cold environments, making it versatile for a wide range of applications.

Maximum Collector Current (IC): 144 A

The high maximum collector current of 144 A allows the IGBT to handle large currents, making it ideal for high-power applications.

Terminal Finish: TIN

The terminal finish of tin provides corrosion resistance and reliable electrical connections, ensuring long-term performance in various operating conditions.

Terminal Position: SINGLE

The single terminal position simplifies installation and wiring, making it easy to integrate into power control systems efficiently.

Nominal Turn On Time (ton): 83 ns

With a fast turn-on time of 83 ns, this IGBT facilitates quick switching transitions, improving responsiveness and overall performance in power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) RGTVX6TS65DGC11 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

298 ns

Nominal Turn On Time (ton):

83 ns

Trade Compliance

RGTVX6TS65DGC11 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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