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IGP40N65H5XKSA1

Infineon Technologies

IGP40N65H5XKSA1 by Infineon Technologies

Infineon's IGP40N65H5XKSA1 is an N-CHANNEL IGBT with 650V VCE, 74A IC, and 255W power dissipation. Ideal for high-power applications requiring efficient switching at up to 175°C operating temperature.

Median Price

$3.110

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 323 parts In-Stock

1+ parts

$2.690

100+ parts

$1.540

1k+ parts

$1.190

10k+ parts

-

323

$2.690

$1.540

$1.190

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Arrow

USA . 52 parts In-Stock

1+ parts

$3.108

100+ parts

$1.700

1k+ parts

$1.294

10k+ parts

$1.264

52

$3.108

$1.700

$1.294

$1.264

Chip1Stop

Japan . 290 parts In-Stock

1+ parts

$3.110

100+ parts

$1.530

1k+ parts

-

10k+ parts

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290

$3.110

$1.530

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Mouser Electronics

USA . 691 parts In-Stock

1+ parts

$3.120

100+ parts

$1.410

1k+ parts

$1.120

10k+ parts

-

691

$3.120

$1.410

$1.120

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DigiKey

USA . 500 parts In-Stock

1+ parts

$3.120

100+ parts

$1.404

1k+ parts

$1.137

10k+ parts

-

500

$3.120

$1.404

$1.137

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Newark

USA . 513 parts In-Stock

1+ parts

$3.210

100+ parts

$1.440

1k+ parts

$1.080

10k+ parts

$0.995

513

$3.210

$1.440

$1.080

$0.995

Element14

Singapore . 323 parts In-Stock

1+ parts

$4.280

100+ parts

$2.760

1k+ parts

$2.090

10k+ parts

-

323

$4.280

$2.760

$2.090

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Verical

USA . 290 parts In-Stock

1+ parts

-

100+ parts

$2.060

1k+ parts

-

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290

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$2.060

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Rochester

USA . 71 parts In-Stock

1+ parts

-

100+ parts

$1.310

1k+ parts

$1.090

10k+ parts

$0.969

71

-

$1.310

$1.090

$0.969

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 296 parts In-Stock

1+ parts

$1.102

100+ parts

-

1k+ parts

-

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296

$1.102

-

-

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Nova Conductors

Japan . 54 parts In-Stock

1+ parts

$2.154

100+ parts

-

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54

$2.154

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TME

Poland . 348 parts In-Stock

1+ parts

$2.920

100+ parts

$1.400

1k+ parts

$1.330

10k+ parts

-

348

$2.920

$1.400

$1.330

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Schukat

Germany . 101 parts In-Stock

1+ parts

$3.100

100+ parts

$1.780

1k+ parts

-

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101

$3.100

$1.780

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Vyrian

USA . 102 parts In-Stock

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102

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 133 parts In-Stock

1+ parts

$0.621

100+ parts

-

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133

$0.621

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-

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Semicontronic

India . 384 parts In-Stock

1+ parts

$0.990

100+ parts

$0.965

1k+ parts

$0.960

10k+ parts

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384

$0.990

$0.965

$0.960

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Ampacity Inc.

Singapore . 10 parts In-Stock

1+ parts

$0.990

100+ parts

-

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-

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10

$0.990

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Corphita

USA . 694 parts In-Stock

1+ parts

$1.044

100+ parts

-

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694

$1.044

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Corohmni

South Africa . 269 parts In-Stock

1+ parts

$1.232

100+ parts

-

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269

$1.232

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Modulus Dynamics

Lithuania . 24,911 parts In-Stock

1+ parts

$1.809

100+ parts

$1.737

1k+ parts

$1.664

10k+ parts

-

24,911

$1.809

$1.737

$1.664

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Argo Parts USA

USA . 2,345 parts In-Stock

1+ parts

$2.154

100+ parts

-

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2,345

$2.154

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

$2.154

100+ parts

$2.111

1k+ parts

-

10k+ parts

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1,000

$2.154

$2.111

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Continental Prestige Electronics

USA . 165 parts In-Stock

1+ parts

$3.060

100+ parts

$2.000

1k+ parts

$1.350

10k+ parts

-

165

$3.060

$2.000

$1.350

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Microchip USA

USA . 5,820 parts In-Stock

1+ parts

$21.840

100+ parts

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5,820

$21.840

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Perfect Parts

USA . 1,648 parts In-Stock

1+ parts

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1,648

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

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1,000

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Glotronic Ltd.

UK . 400 parts In-Stock

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400

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iodParts Technologies Inc.

India . 65 parts In-Stock

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65

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Overview

Unlock the power of cutting-edge technology with the IGP40N65H5XKSA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon is known for producing high-quality Insulated Gate Bipolar Transistors (IGBT) that deliver exceptional performance and reliability. The N-CHANNEL design of this transistor allows for efficient power management, making it ideal for a wide range of applications. Experience the value and benefits that this product offers, from its maximum power dissipation of 255W to its maximum collector-emitter voltage of 650V. Trust Infineon to provide you with the tools you need to succeed in today's fast-paced world of technology.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs generally have lower conduction losses compared to P-CHANNEL IGBTs, making them more efficient for many applications.

Maximum Power Dissipation (Abs): 255 W

High power dissipation allows this IGBT to handle high current loads without overheating, making it suitable for industrial and high-power applications.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature ensures that this IGBT can operate reliably even in demanding environments where temperatures can rise significantly.

Maximum Collector-Emitter Voltage: 650 V

The high maximum Collector-Emitter Voltage rating allows this IGBT to be used in high voltage circuits without the risk of breakdown or damage.

Maximum Gate-Emitter Voltage: 20 V

The low maximum Gate-Emitter Voltage rating ensures that the IGBT is easily controllable and can be safely driven by standard gate driver circuits.

Maximum Collector Current (IC): 74 A

The high maximum Collector Current rating allows this IGBT to handle large current flows, making it suitable for high-power applications such as motor drives and inverters.

Maximum Gate-Emitter Threshold Voltage: 4.8 V

The low Gate-Emitter Threshold Voltage ensures that the IGBT can be turned on easily with a low voltage signal, improving efficiency and control.

Terminal Finish: TIN

Tin terminal finish provides good solderability and corrosion resistance, ensuring reliable connections and longevity of the IGBT in various applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IGP40N65H5XKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

4.8 V

Maximum Gate-Emitter Voltage:

20 V

JESD-609 Code:

e3

Maximum Operating Temperature:

175 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Trade Compliance

IGP40N65H5XKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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