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IGP40N65F5XKSA1

Infineon Technologies

IGP40N65F5XKSA1 by Infineon Technologies

Infineon Technologies' IGP40N65F5XKSA1 is an N-CHANNEL IGBT with 650V VCE, 74A IC, and 255W power dissipation. Ideal for high-power applications requiring efficient switching capabilities in industrial equipment, renewable energy systems, and motor drives.

Median Price

$3.115

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 950 parts In-Stock

1+ parts

$3.110

100+ parts

$1.540

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-

10k+ parts

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950

$3.110

$1.540

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Mouser Electronics

USA . 288 parts In-Stock

1+ parts

$3.120

100+ parts

$1.410

1k+ parts

$1.110

10k+ parts

-

288

$3.120

$1.410

$1.110

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DigiKey

USA . 207 parts In-Stock

1+ parts

$3.120

100+ parts

$1.404

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-

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207

$3.120

$1.404

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Newark

USA . 389 parts In-Stock

1+ parts

$3.210

100+ parts

$1.440

1k+ parts

$1.080

10k+ parts

$0.995

389

$3.210

$1.440

$1.080

$0.995

Verical

USA . 500 parts In-Stock

1+ parts

-

100+ parts

-

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$1.026

10k+ parts

$0.954

500

-

-

$1.026

$0.954

Rochester

USA . 52 parts In-Stock

1+ parts

-

100+ parts

$1.310

1k+ parts

$1.090

10k+ parts

$0.969

52

-

$1.310

$1.090

$0.969

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 435 parts In-Stock

1+ parts

$1.358

100+ parts

-

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435

$1.358

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$2.263

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10

$2.263

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TME

Poland . 474 parts In-Stock

1+ parts

$2.940

100+ parts

-

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474

$2.940

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Schukat

Germany . 187 parts In-Stock

1+ parts

$3.535

100+ parts

$2.028

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-

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187

$3.535

$2.028

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Vyrian

USA . 187 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 15,966 parts In-Stock

1+ parts

$0.355

100+ parts

$0.341

1k+ parts

$0.327

10k+ parts

-

15,966

$0.355

$0.341

$0.327

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Corohmni

South Africa . 355 parts In-Stock

1+ parts

$0.813

100+ parts

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355

$0.813

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Aztec Data Supply Inc.

USA . 267 parts In-Stock

1+ parts

$0.814

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267

$0.814

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Semicontronic

India . 737 parts In-Stock

1+ parts

$1.220

100+ parts

$1.190

1k+ parts

$1.183

10k+ parts

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737

$1.220

$1.190

$1.183

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Ampacity Inc.

Singapore . 174 parts In-Stock

1+ parts

$1.220

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174

$1.220

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Corphita

USA . 397 parts In-Stock

1+ parts

$1.287

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397

$1.287

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

1+ parts

$1.711

100+ parts

$1.557

1k+ parts

$1.403

10k+ parts

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5,000

$1.711

$1.557

$1.403

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Aranea Global

USA . 500 parts In-Stock

1+ parts

$2.218

100+ parts

-

1k+ parts

$2.129

10k+ parts

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500

$2.218

-

$2.129

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Continental Prestige Electronics

USA . 3,896 parts In-Stock

1+ parts

$2.263

100+ parts

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10k+ parts

$2.218

3,896

$2.263

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-

$2.218

Argo Parts USA

USA . 1,727 parts In-Stock

1+ parts

$2.263

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-

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1,727

$2.263

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Microchip USA

USA . 6,361 parts In-Stock

1+ parts

$21.840

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6,361

$21.840

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Perfect Parts

USA . 2,783 parts In-Stock

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2,783

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iodParts Technologies Inc.

India . 2,783 parts In-Stock

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2,783

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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Overview

Unleash the power of innovation with the IGP40N65F5XKSA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon delivers top-quality Insulated Gate Bipolar Transistors (IGBT) that guarantee maximum performance and reliability. Whether you're looking to boost efficiency in industrial applications or enhance power systems in renewable energy projects, this N-CHANNEL transistor is the ultimate solution. With a maximum collector-emitter voltage of 650 V and a collector current of 74 A, the IGP40N65F5XKSA1 offers unparalleled value and benefits for all your electronic needs. Elevate your projects to new heights with Infineon's cutting-edge technology.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs offer faster switching speeds and lower conduction losses, making them ideal for high-frequency applications.

Maximum Power Dissipation (Abs): 255 W

With a high power dissipation rating, this IGBT can handle heavy loads without overheating, ensuring reliable performance.

Maximum Operating Temperature: 175 °C

The high operating temperature range allows this IGBT to function effectively in harsh environments, increasing its durability.

Maximum Collector-Emitter Voltage: 650 V

This high voltage rating enables the IGBT to withstand surges and spikes, protecting the circuit from damage.

Maximum Gate-Emitter Voltage: 20 V

The maximum gate-emitter voltage ensures proper switching operation, enhancing the overall efficiency of the IGBT.

Maximum Collector Current (IC): 74 A

With a high collector current rating, this IGBT can handle large amounts of current, making it suitable for power electronics applications.

Maximum Gate-Emitter Threshold Voltage: 4.8 V

The gate-emitter threshold voltage ensures reliable turn-on and turn-off performance, improving the IGBT's overall functionality.

Terminal Finish: TIN

The tin terminal finish provides a reliable connection, enhancing the IGBT's longevity and preventing corrosion.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IGP40N65F5XKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

4.8 V

Maximum Gate-Emitter Voltage:

20 V

JESD-609 Code:

e3

Maximum Operating Temperature:

175 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Trade Compliance

IGP40N65F5XKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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