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IGW40N120H3FKSA1

Infineon Technologies

IGW40N120H3FKSA1 by Infineon Technologies

IGW40N120H3FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 80A max collector current, and 414ns nominal turn off time. Ideal for power control applications, this transistor features a single configuration in a rectangular package with through-hole terminals.

Median Price

$5.960

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 1,512 parts In-Stock

1+ parts

$5.320

100+ parts

$2.810

1k+ parts

$2.360

10k+ parts

-

1,512

$5.320

$2.810

$2.360

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Chip1Stop

Japan . 235 parts In-Stock

1+ parts

$5.950

100+ parts

$3.340

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-

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235

$5.950

$3.340

-

-

DigiKey

USA . 374 parts In-Stock

1+ parts

$5.970

100+ parts

$3.383

1k+ parts

$2.397

10k+ parts

$2.321

374

$5.970

$3.383

$2.397

$2.321

Newark

USA . 1,036 parts In-Stock

1+ parts

$6.050

100+ parts

$3.410

1k+ parts

$3.030

10k+ parts

-

1,036

$6.050

$3.410

$3.030

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Element14

Singapore . 901 parts In-Stock

1+ parts

$9.080

100+ parts

$5.130

1k+ parts

$4.820

10k+ parts

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901

$9.080

$5.130

$4.820

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Verical

USA . 30 parts In-Stock

1+ parts

-

100+ parts

$3.414

1k+ parts

$2.481

10k+ parts

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30

-

$3.414

$2.481

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 964 parts In-Stock

1+ parts

$5.082

100+ parts

-

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-

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964

$5.082

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$5.240

100+ parts

-

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100

$5.240

-

-

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TME

Poland . 87 parts In-Stock

1+ parts

$5.240

100+ parts

-

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-

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87

$5.240

-

-

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Chip Stock

USA . 8,000 parts In-Stock

1+ parts

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8,000

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Vyrian

USA . 1,659 parts In-Stock

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1,659

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 90 parts In-Stock

1+ parts

$0.706

100+ parts

-

1k+ parts

-

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90

$0.706

-

-

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Modulus Dynamics

Lithuania . 10,412 parts In-Stock

1+ parts

$1.119

100+ parts

$1.074

1k+ parts

$1.029

10k+ parts

-

10,412

$1.119

$1.074

$1.029

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Aztec Data Supply Inc.

USA . 122 parts In-Stock

1+ parts

$1.430

100+ parts

-

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122

$1.430

-

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Advanced Electronics

New Zealand . 87 parts In-Stock

1+ parts

$1.506

100+ parts

$1.370

1k+ parts

$1.235

10k+ parts

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87

$1.506

$1.370

$1.235

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Ampacity Inc.

Singapore . 1,984 parts In-Stock

1+ parts

$3.810

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1,984

$3.810

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Semicontronic

India . 1,678 parts In-Stock

1+ parts

$3.810

100+ parts

$3.715

1k+ parts

$3.696

10k+ parts

-

1,678

$3.810

$3.715

$3.696

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Corphita

USA . 934 parts In-Stock

1+ parts

$4.815

100+ parts

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934

$4.815

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Bastille Electronics

Australia . 50 parts In-Stock

1+ parts

$5.240

100+ parts

$4.978

1k+ parts

$4.729

10k+ parts

$4.664

50

$5.240

$4.978

$4.729

$4.664

Continental Prestige Electronics

USA . 115 parts In-Stock

1+ parts

$6.290

100+ parts

$4.350

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-

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115

$6.290

$4.350

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Microchip USA

USA . 3,616 parts In-Stock

1+ parts

$19.964

100+ parts

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3,616

$19.964

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Andel Nordic

Denmark . 1,200 parts In-Stock

1+ parts

$55.820

100+ parts

-

1k+ parts

$39.074

10k+ parts

$39.074

1,200

$55.820

-

$39.074

$39.074

Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Argo Parts USA

USA . 3,218 parts In-Stock

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Eastek

USA . 240 parts In-Stock

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240

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Glotronic Ltd.

UK . 144 parts In-Stock

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144

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iodParts Technologies Inc.

India . 46 parts In-Stock

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46

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Overview

Experience superior power control with the IGW40N120H3FKSA1 by Infineon Technologies. Known for their high-quality products, Infineon Technologies delivers reliable Insulated Gate Bipolar Transistors that are perfect for a variety of applications. This N-CHANNEL transistor offers a single configuration and a maximum collector-emitter voltage of 1200V. With a quick turn-off time of 414ns and a nominal turn-on time of 78ns, this transistor is ideal for power control in various systems. Trust in Infineon Technologies to provide you with top-of-the-line components that offer exceptional value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, increasing the durability and reliability of the IGBT.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs typically have lower on-state voltage drop and faster switching speeds compared to P-CHANNEL IGBTs, making them more efficient for power control applications.

Configuration: SINGLE

SINGLE configuration simplifies the circuit design and makes it easier to integrate the IGBT into a power control system.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring optimal performance and reliability in controlling high power loads.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient mounting and heat dissipation, enhancing the thermal performance and longevity of the IGBT.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and stable connections to the circuit board, reducing the risk of disconnection or failure.

Nominal Turn Off Time (toff): 414 ns

Fast turn-off time allows for quick switching transitions, minimizing power losses and improving efficiency in power control operations.

No. of Terminals: 3

Having a limited number of terminals simplifies the connection and reduces the risk of wiring errors, making it easier to integrate into the system.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides mechanical stability and allows for easy mounting on heat sinks or other components for efficient thermal management.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures the IGBT can withstand elevated temperatures in harsh environments without compromising performance.

Maximum Collector-Emitter Voltage: 1200 V

High maximum collector-emitter voltage rating allows for the IGBT to be used in high voltage applications without risk of breakdown or failure.

Transistor Element Material: SILICON

Silicon material offers good electrical properties and high thermal conductivity, making it ideal for power semiconductor devices like IGBTs.

Maximum Collector Current (IC): 80 A

High maximum collector current rating allows the IGBT to handle large currents, making it suitable for high power applications that require high current handling capability.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and solderability, ensuring reliable connections and preventing corrosion or oxidation of the terminals.

Terminal Position: SINGLE

Single terminal position simplifies the installation process and reduces the risk of wiring errors, ensuring a secure and reliable connection in the circuit.

Nominal Turn On Time (ton): 78 ns

Fast turn-on time allows for quick response and switching speed, improving the overall efficiency and performance of the power control circuit.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IGW40N120H3FKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

414 ns

Nominal Turn On Time (ton):

78 ns

Trade Compliance

IGW40N120H3FKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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