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IGW40N65F5AXKSA1

Infineon Technologies

IGW40N65F5AXKSA1 by Infineon Technologies

IGW40N65F5AXKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 650V and current of 74A. It has a turn-off time of 200ns and turn-on time of 30ns, making it ideal for power control applications. The transistor comes in a rectangular package style with through-hole terminals, suitable for flange mount installation.

Median Price

$3.188

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 235 parts In-Stock

1+ parts

$6.140

100+ parts

$4.370

1k+ parts

$3.700

10k+ parts

$2.860

235

$6.140

$4.370

$3.700

$2.860

Rochester

USA . 40,202 parts In-Stock

1+ parts

-

100+ parts

$2.850

1k+ parts

$2.550

10k+ parts

$2.400

40,202

-

$2.850

$2.550

$2.400

Verical

USA . 36,080 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$3.188

10k+ parts

$3.000

36,080

-

-

$3.188

$3.000

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 735 parts In-Stock

1+ parts

$3.021

100+ parts

-

1k+ parts

-

10k+ parts

-

735

$3.021

-

-

-

Vyrian

USA . 7,343 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,343

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-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 5,965 parts In-Stock

1+ parts

$1.504

100+ parts

$1.444

1k+ parts

$1.384

10k+ parts

-

5,965

$1.504

$1.444

$1.384

-

Corphita

USA . 492 parts In-Stock

1+ parts

$2.862

100+ parts

-

1k+ parts

-

10k+ parts

-

492

$2.862

-

-

-

Authorized Procurement Solutions

USA . 500 parts In-Stock

1+ parts

-

100+ parts

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500

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Microchip USA

USA . 293 parts In-Stock

1+ parts

-

100+ parts

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293

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Overview

Unleash the power of Infineon Technologies' IGW40N65F5AXKSA1 Insulated Gate Bipolar Transistor (IGBT) for your power control needs. With its high-quality construction and reliable performance, this N-CHANNEL transistor with built-in diode is perfect for a wide range of applications. From automotive to industrial, this rectangular package offers a maximum collector-emitter voltage of 650V and a maximum collector current of 74A. Experience superior turn on/off times and robust design with Infineon's IGW40N65F5AXKSA1, setting new standards in power control technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good electrical insulation and protection for the internal components, ensuring reliability and longevity of the product.

Polarity or Channel Type: N-CHANNEL

Allows for efficient power control and switching capabilities in the circuit.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space by integrating a diode within the IGBT package.

Transistor Application: POWER CONTROL

Designed for high power control applications, ensuring efficient performance and reliability.

Package Shape: RECTANGULAR

Easily mountable and fits well in circuit layouts, making it convenient for installation.

Terminal Form: THROUGH-HOLE

Allows for easy and secure connections on PCBs, ensuring stability during operation.

Nominal Turn Off Time (toff): 200 ns

Offers fast turn-off time, reducing switching losses and improving overall efficiency of the circuit.

No. of Terminals: 3

Provides necessary connections for the device to operate effectively in the circuit.

Package Style (Meter): FLANGE MOUNT

Enables secure mounting and thermal management, ensuring optimal performance during operation.

Maximum Collector-Emitter Voltage: 650 V

Allows for high voltage operation, making it suitable for various power control applications.

Transistor Element Material: SILICON

Offers high reliability and performance, ensuring durability and stability in demanding environments.

Maximum Collector Current (IC): 74 A

Capable of handling high current loads, making it suitable for power control applications that require high current handling.

Terminal Position: SINGLE

Simplifies installation and wiring, ensuring ease of use and reliability in the circuit.

Case Connection: COLLECTOR

Provides efficient heat dissipation and thermal management, ensuring optimal performance under high load conditions.

Nominal Turn On Time (ton): 30 ns

Offers fast turn-on time, allowing for quick response and efficient power control in the circuit.

Reference Standard: AEC-Q101

Complies with automotive electronic council standards, ensuring high quality and reliability for automotive applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IGW40N65F5AXKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

200 ns

Nominal Turn On Time (ton):

30 ns

Trade Compliance

IGW40N65F5AXKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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