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MGD623S

Sanken Electric

MGD623S by Sanken Electric

The Sanken Electric MGD623S is an N-CHANNEL IGBT transistor with a max voltage of 600V and current of 50A. It has a turn-off time of 420ns and turn-on time of 175ns, making it ideal for power control applications. The package style is flange mount with a plastic/epoxy body material.

Median Price

$1.292

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Overview

Looking for a high-quality solution for power control applications? Look no further than the MGD623S Insulated Gate Bipolar Transistor by Sanken Electric. With a maximum collector-emitter voltage of 600V and a nominal turn off time of 420ns, this N-channel transistor offers reliable performance in a variety of settings. Its single configuration with built-in diode makes it easy to integrate into your projects, while its flange mount package style ensures simple installation. Trust Sanken Electric's reputation for excellence and benefit from the value and advantages that the MGD623S brings to your power control needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides excellent insulation and protection for the internal components, making the IGBT durable and reliable.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs offer high switching speeds and efficiency, making them ideal for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for better performance and reliability in power control applications, simplifying circuit design.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, this IGBT is optimized for high power efficiency and performance.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting and installation in a variety of circuits and systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and stable connection, ensuring consistent performance in high-power applications.

Nominal Turn Off Time (toff): 420 ns

The fast turn-off time of 420 ns allows for quick switching and control of power in various applications.

No. of Terminals: 3

With 3 terminals, this IGBT is easy to connect and integrate into existing circuits for efficient power control.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for easy installation and secure mounting, enhancing the overall reliability of the IGBT.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this IGBT can withstand high temperatures and harsh environments.

Maximum Collector-Emitter Voltage: 600 V

The high voltage rating of 600 V allows for efficient power control in a wide range of applications.

Transistor Element Material: SILICON

Silicon transistor elements provide high performance and reliability, ensuring long-term durability and efficiency.

Maximum Collector Current (IC): 50 A

With a maximum collector current of 50 A, this IGBT can handle high power loads with ease.

Terminal Position: SINGLE

The single terminal position simplifies installation and wiring, making it easy to integrate this IGBT into various power control systems.

Nominal Turn On Time (ton): 175 ns

The fast turn-on time of 175 ns allows for quick response and precise control in power switching applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) MGD623S attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Sanken Electric

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

420 ns

Nominal Turn On Time (ton):

175 ns

Trade Compliance

MGD623S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Sanken Electric

In 1937, as part of the 50th anniversary project of the former Toho Electric Power Co., Ltd., the Toho Industrial Research Institute was invited by the late Yasuzaemon Matsunaga, president of the company at the time, to develop industries that would actually benefit society. It was created with the intention of doing In 1946, the late Tetsuji Kotani, chief of the semiconductor research laboratory at the same research institute, established Toho Sanken Denki Co., Ltd., taking over the engineers and equipment of the research institute, which was dissolved after the end of the war. In 1962, the company name was changed to the current name, Sanken Electric Co., Ltd. Founded a factory specializing in semiconductors with the results of cuprous oxide and selenium rectifiers that have continued since the laboratory days. In 1958, we succeeded in making prototypes of thermal diffusion silicon diodes, which were groundbreaking in the world at the time, followed by silicon power transistors. Since then, we have grown together with the electronics industry, established a solid position as a manufacturer in the power electronics field, and grasped the changes of the times. We have provided solutions. We have been and will continue to supply unique and advanced products and strive to be a prominent innovator in the field of power electronics.

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