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MGD623N

Sanken Electric

MGD623N by Sanken Electric

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 50 A; No. of Elements: 1; Nominal Turn Off Time (toff): 500 ns;

Median Price

$2.512

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 840 parts In-Stock

1+ parts

$2.780

100+ parts

$1.760

1k+ parts

$1.610

10k+ parts

-

840

$2.780

$1.760

$1.610

-

Verical

USA . 840 parts In-Stock

1+ parts

-

100+ parts

$2.244

1k+ parts

$2.053

10k+ parts

-

840

-

$2.244

$2.053

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 793 parts In-Stock

1+ parts

-

100+ parts

$2.170

1k+ parts

-

10k+ parts

-

793

-

$2.170

-

-

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) MGD623N attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Sanken Electric

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

500 ns

Nominal Turn On Time (ton):

175 ns

Trade Compliance

MGD623N Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Sanken Electric

In 1937, as part of the 50th anniversary project of the former Toho Electric Power Co., Ltd., the Toho Industrial Research Institute was invited by the late Yasuzaemon Matsunaga, president of the company at the time, to develop industries that would actually benefit society. It was created with the intention of doing In 1946, the late Tetsuji Kotani, chief of the semiconductor research laboratory at the same research institute, established Toho Sanken Denki Co., Ltd., taking over the engineers and equipment of the research institute, which was dissolved after the end of the war. In 1962, the company name was changed to the current name, Sanken Electric Co., Ltd. Founded a factory specializing in semiconductors with the results of cuprous oxide and selenium rectifiers that have continued since the laboratory days. In 1958, we succeeded in making prototypes of thermal diffusion silicon diodes, which were groundbreaking in the world at the time, followed by silicon power transistors. Since then, we have grown together with the electronics industry, established a solid position as a manufacturer in the power electronics field, and grasped the changes of the times. We have provided solutions. We have been and will continue to supply unique and advanced products and strive to be a prominent innovator in the field of power electronics.

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