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FZ1000R33HL3BPSA1

Infineon Technologies

FZ1000R33HL3BPSA1 by Infineon Technologies

FZ1000R33HL3BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 3300V. It has a nominal turn off time of 4700ns and a nominal turn on time of 1050ns. This IGBT is commonly used in applications requiring high voltage switching capabilities.

Median Price

$1,458.500

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 386 parts In-Stock

1+ parts

$1,166.800

100+ parts

$1,096.790

1k+ parts

$1,026.780

10k+ parts

-

386

$1,166.800

$1,096.790

$1,026.780

-

DigiKey

USA . 386 parts In-Stock

1+ parts

$1,458.500

100+ parts

-

1k+ parts

-

10k+ parts

-

386

$1,458.500

-

-

-

Verical

USA . 386 parts In-Stock

1+ parts

$1,458.500

100+ parts

$1,370.987

1k+ parts

$1,283.475

10k+ parts

-

386

$1,458.500

$1,370.987

$1,283.475

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 600 parts In-Stock

1+ parts

$1,688.062

100+ parts

-

1k+ parts

-

10k+ parts

-

600

$1,688.062

-

-

-

Digiode

USA . 351 parts In-Stock

1+ parts

$1,720.764

100+ parts

-

1k+ parts

-

10k+ parts

-

351

$1,720.764

-

-

-

Vyrian

USA . 3,616 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,616

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 311 parts In-Stock

1+ parts

$0.461

100+ parts

-

1k+ parts

-

10k+ parts

-

311

$0.461

-

-

-

Modulus Dynamics

Lithuania . 13,009 parts In-Stock

1+ parts

$0.501

100+ parts

$0.481

1k+ parts

$0.461

10k+ parts

-

13,009

$0.501

$0.481

$0.461

-

Aztec Data Supply Inc.

USA . 3,139 parts In-Stock

1+ parts

$1.490

100+ parts

-

1k+ parts

-

10k+ parts

-

3,139

$1.490

-

-

-

Ampacity Inc.

Singapore . 198 parts In-Stock

1+ parts

$1,539.630

100+ parts

-

1k+ parts

-

10k+ parts

-

198

$1,539.630

-

-

-

Corphita

USA . 865 parts In-Stock

1+ parts

$1,630.197

100+ parts

-

1k+ parts

-

10k+ parts

-

865

$1,630.197

-

-

-

Continental Prestige Electronics

USA . 4,229 parts In-Stock

1+ parts

$1,641.590

100+ parts

-

1k+ parts

-

10k+ parts

$1,608.758

4,229

$1,641.590

-

-

$1,608.758

Argo Parts USA

USA . 1,368 parts In-Stock

1+ parts

$1,641.590

100+ parts

$1,625.174

1k+ parts

$1,608.758

10k+ parts

$1,592.342

1,368

$1,641.590

$1,625.174

$1,608.758

$1,592.342

Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$1,654.300

100+ parts

-

1k+ parts

$1,588.128

10k+ parts

-

2,000

$1,654.300

-

$1,588.128

-

Microchip USA

USA . 2,874 parts In-Stock

1+ parts

$1,739.310

100+ parts

-

1k+ parts

-

10k+ parts

-

2,874

$1,739.310

-

-

-

Component Stockers USA

USA . 2 parts In-Stock

1+ parts

$1,826.780

100+ parts

-

1k+ parts

-

10k+ parts

-

2

$1,826.780

-

-

-

Semicontronic

India . 119 parts In-Stock

1+ parts

$3,350.960

100+ parts

$3,267.186

1k+ parts

$3,250.431

10k+ parts

-

119

$3,350.960

$3,267.186

$3,250.431

-

QUARKTWIN TECHNOLOGY LTD

USA . 3,104 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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3,104

-

-

-

-

Overview

Discover the power and reliability of the FZ1000R33HL3BPSA1 by Infineon Technologies. As a trusted manufacturer in the industry, Infineon Technologies delivers top-quality products like this Insulated Gate Bipolar Transistor (IGBT). With its N-CHANNEL polarity and complex configuration, it offers exceptional performance in various applications. But what sets this product apart is the value it brings to customers. From its fast turn-off time to its high voltage capacity, the FZ1000R33HL3BPSA1 ensures efficient operation and enhanced productivity. Trust Infineon Technologies for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Polarity or Channel Type:

N-CHANNEL - This product's N-channel polarity allows for efficient control of current flow, making it suitable for high-power applications.

Configuration:

COMPLEX - With a complex configuration, this IGBT can handle complex circuitry and perform multiple functions, making it versatile and suitable for a wide range of applications.

Package Shape:

RECTANGULAR - The rectangular shape of the package allows for easy integration into various circuit designs and provides better heat dissipation, ensuring optimal performance and reliability.

No. of Elements:

2 - With two elements, this IGBT offers enhanced switching performance and robustness, providing better protection against voltage spikes and allowing for higher power handling capabilities.

Nominal Turn Off Time (toff):

4700 ns - The long turn-off time of 4700 ns ensures safe and controlled power shutdown, minimizing the risk of voltage spikes and improving overall system stability.

No. of Terminals:

7 - With seven terminals, this IGBT offers versatile connectivity options, allowing for easy integration into complex circuit configurations and ensuring optimal signal control.

Package Style (Meter):

FLANGE MOUNT - The flange mount package style provides secure and reliable mechanical mounting, ensuring easy installation and stability in demanding environments.

Maximum Collector-Emitter Voltage:

3300 V - With a high maximum collector-emitter voltage rating of 3300 V, this IGBT can withstand high voltage applications, making it suitable for power electronics and electric vehicle applications.

Transistor Element Material:

SILICON - The use of silicon as the transistor element material allows for efficient power handling and temperature resilience, ensuring high performance and reliability even in demanding operating conditions.

Terminal Position:

UPPER - The upper terminal position allows for convenient routing and connection with other circuit components, making installation and integration easier.

Case Connection:

ISOLATED - The isolated case connection ensures electrical insulation between the transistor element and the case, providing improved safety and preventing potential short circuits.

Nominal Turn On Time (ton):

1050 ns - The nominal turn-on time of 1050 ns ensures fast switching capabilities, allowing for efficient and precise control of the transistor's conducting state, making it ideal for applications requiring high-frequency switching.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FZ1000R33HL3BPSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

ISOLATED

Maximum Collector-Emitter Voltage:

3300 V

Configuration:

JESD-30 Code:

R-XUFM-X7

No. of Elements:

2

No. of Terminals:

7

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

4700 ns

Nominal Turn On Time (ton):

1050 ns

Trade Compliance

FZ1000R33HL3BPSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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