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IXYH50N120C3D1

Littelfuse

IXYH50N120C3D1 by Littelfuse

Littelfuse IXYH50N120C3D1 is an N-CHANNEL IGBT with 1200V VCE, 90A IC, and 625W power dissipation. Ideal for power control applications, it features a single configuration with built-in diode and operates b/w -55 to 150 °C.

Median Price

$12.305

Lifecycle Status

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13

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1k+

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Mouser Electronics

USA . 299 parts In-Stock

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$11.670

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$8.180

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299

$11.670

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$8.180

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Newark

USA . 279 parts In-Stock

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$12.940

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$9.320

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$8.340

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279

$12.940

$9.320

$8.340

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DigiKey

USA . 324 parts In-Stock

1+ parts

$13.870

100+ parts

$8.440

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$7.053

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324

$13.870

$8.440

$7.053

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Distrelec

Netherlands . 14 parts In-Stock

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$16.122

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$14.887

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$14.887

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TTI

USA . 300 parts In-Stock

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$7.970

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$7.250

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300

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$7.970

$7.250

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Arrow

USA . 180 parts In-Stock

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$8.024

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$8.024

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Verical

USA . 80 parts In-Stock

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Nova Conductors

Japan . 39 parts In-Stock

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$10.255

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39

$10.255

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TME

Poland . 80 parts In-Stock

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$11.130

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Ozdisan Elektronik

Türkiye . 296 parts In-Stock

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$13.758

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$13.758

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NAC Semi

USA . 293 parts In-Stock

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$29.590

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$26.900

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293

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$29.590

$26.900

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IBS Electronics

USA . 270 parts In-Stock

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$17.531

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$15.708

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Vyrian

USA . 196 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,000 parts In-Stock

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$0.526

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$0.526

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Corohmni

South Africa . 272 parts In-Stock

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$0.862

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$0.862

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Continental Prestige Electronics

USA . 6,791 parts In-Stock

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$10.255

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$10.050

6,791

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$10.050

Netroflash

USA . 500 parts In-Stock

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$10.255

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Microchip USA

USA . 5,542 parts In-Stock

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$38.808

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QUARKTWIN TECHNOLOGY LTD

USA . 12,554 parts In-Stock

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Argo Parts USA

USA . 1,703 parts In-Stock

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Perfect Parts

USA . 333 parts In-Stock

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Authorized Procurement Solutions

USA . 300 parts In-Stock

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300

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GreenTree Electronics

Israel . 300 parts In-Stock

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iodParts Technologies Inc.

India . 65 parts In-Stock

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Overview

Unlock the power of precision and reliability with the IXYH50N120C3D1 by Littelfuse. As a trusted leader in the industry, Littelfuse delivers top-quality Insulated Gate Bipolar Transistors (IGBT) that are ideal for power control applications. With advanced features like a built-in diode and high maximum power dissipation, this N-channel transistor offers exceptional performance and efficiency. Trust Littelfuse to provide cutting-edge technology that meets your needs and exceeds your expectations. Experience the difference with the IXYH50N120C3D1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures durability and protection for the internal components, making this IGBT a reliable choice for long-term use.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower on-state resistance and higher current-carrying capabilities, making this IGBT suitable for power control applications.

Maximum VCEsat: 3.5 V

The low VCEsat voltage of 3.5V reduces power losses and improves efficiency in power control applications.

Maximum Power Dissipation (Abs): 625 W

With a high power dissipation rating of 625W, this IGBT can handle large amounts of power and is suitable for high-power applications.

Maximum Collector-Emitter Voltage: 1200 V

The high collector-emitter voltage rating of 1200V allows this IGBT to handle high voltage levels, making it suitable for industrial and commercial applications.

Minimum Operating Temperature: -55 °C

The wide operating temperature range of -55 to 150°C allows this IGBT to function in various environmental conditions, increasing its versatility.

Maximum Collector Current (IC): 90 A

With a high collector current rating of 90A, this IGBT can handle large current loads, making it suitable for high-power applications.

Maximum Gate-Emitter Threshold Voltage: 5 V

The low gate-emitter threshold voltage of 5V ensures efficient switching performance and reduced power losses, making this IGBT ideal for power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXYH50N120C3D1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

220 ns

Nominal Turn On Time (ton):

96 ns

Maximum VCEsat:

3.5 V

Trade Compliance

IXYH50N120C3D1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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