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IXYH16N170CV1

Littelfuse

IXYH16N170CV1 by Littelfuse

Littelfuse IXYH16N170CV1 is an N-CHANNEL IGBT with 1700V VCEsat, 40A IC, and 310W power dissipation. Ideal for power control applications, it features a built-in diode, 175°C max operating temp, and fast turn-off time of 315ns.

Median Price

$13.342

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Arrow

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$11.524

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$11.419

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DigiKey

USA . 294 parts In-Stock

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$15.160

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$9.299

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$7.915

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Nova Conductors

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Ampacity Inc.

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$6.590

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Microchip USA

USA . 8,205 parts In-Stock

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$39.928

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QUARKTWIN TECHNOLOGY LTD

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Argo Parts USA

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Continental Prestige Electronics

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Aranea Global

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Overview

Unleash the power of Littelfuse with the IXYH16N170CV1 Insulated Gate Bipolar Transistor! Designed for maximum performance and reliability, this N-CHANNEL transistor with built-in diode is perfect for power control applications. With a maximum VCEsat of 3.8V and a maximum collector-emitter voltage of 1700V, this product offers exceptional value and benefits to customers looking for efficiency and durability in their electronic devices. Trust Littelfuse for quality products that deliver superior results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and cost-effective, making it a good choice for applications where weight and cost are important factors.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs generally have better performance and lower conduction losses compared to P-channel IGBTs, making this product a good choice for high-power applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and saves space, making this product a convenient choice for power control applications.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT is optimized for efficient and reliable power switching.

Maximum VCEsat: 3.8 V

The low VCEsat value indicates minimal saturation voltage, resulting in reduced power dissipation and improved efficiency.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and efficient use of board space, making this product suitable for compact designs.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides secure and reliable connections, making this product well-suited for applications where a robust connection is essential.

Nominal Turn Off Time (toff): 315 ns

The fast turn-off time ensures quick switching performance, reducing switching losses and improving overall efficiency.

No. of Terminals: 3

The 3 terminals provide necessary connections for the IGBT to function effectively in power control applications.

Maximum Power Dissipation (Abs): 310 W

The high maximum power dissipation rating allows the IGBT to handle high power levels without risk of overheating, making it suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers easy installation and heat dissipation, making this product suitable for applications requiring efficient cooling.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature tolerance ensures reliable performance in environments with elevated temperatures.

Maximum Collector-Emitter Voltage: 1700 V

The high maximum voltage rating allows the IGBT to handle high voltage levels, making it suitable for high-power applications.

Transistor Element Material: SILICON

Silicon is a commonly used semiconductor material known for its reliability and efficiency in power electronics, making this product a reliable choice for power control applications.

Maximum Gate-Emitter Voltage: 20 V

The high maximum gate-emitter voltage rating provides a wide margin of safety for reliable operation, making this IGBT suitable for demanding applications.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature tolerance ensures reliable performance even in extreme cold conditions, making this product suitable for a wide range of environments.

Maximum Collector Current (IC): 40 A

The high maximum collector current rating allows the IGBT to handle high current levels, making it suitable for high-power applications.

Maximum Gate-Emitter Threshold Voltage: 5 V

The low gate-emitter threshold voltage ensures efficient and reliable control of the IGBT, making it suitable for precise power control applications.

Terminal Position: SINGLE

The single terminal position simplifies installation and connection, making this IGBT easy to integrate into power control circuits.

Case Connection: COLLECTOR

The case connection at the collector provides a secure grounding point, improving stability and reliability in power control applications.

Nominal Turn On Time (ton): 35 ns

The fast turn-on time ensures quick response in power switching operations, making this IGBT suitable for high-speed applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXYH16N170CV1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1700 V

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

315 ns

Nominal Turn On Time (ton):

35 ns

Maximum VCEsat:

3.8 V

Trade Compliance

IXYH16N170CV1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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