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IXYH30N65C3H1

Littelfuse

IXYH30N65C3H1 by Littelfuse

IXYH30N65C3H1 by Littelfuse is an N-CHANNEL IGBT with 650V VCE, 60A IC, and 2.7V VCEsat. Ideal for POWER CONTROL applications, it has a single configuration with built-in diode and operates b/w -55 to 175 °C.

Median Price

$8.496

Lifecycle Status

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5

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1k+

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Nova Conductors

Japan . 97 parts In-Stock

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$8.199

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Bristol Electronics

USA . 460 parts In-Stock

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$8.793

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$3.810

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$3.605

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Vyrian

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Dan-Mar Components

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ACDS - Activité Composants Distribution Service

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Continental Prestige Electronics

USA . 2,914 parts In-Stock

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$8.199

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$8.035

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Netroflash

USA . 50 parts In-Stock

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$8.199

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AZTECH Wire

Italy . 361 parts In-Stock

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$15.817

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Microchip USA

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$22.957

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Ampacity Inc.

Singapore . 833 parts In-Stock

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$58.050

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Argo Parts USA

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Overview

Enhance your power control applications with the Littelfuse IXYH30N65C3H1 Insulated Gate Bipolar Transistor. Manufactured by Littelfuse, this N-CHANNEL transistor offers a maximum VCEsat of 2.7 V and a maximum collector-emitter voltage of 650V, providing top-notch performance and reliability. With a single configuration and built-in diode, it simplifies installation and operation. Trust Littelfuse to deliver quality products that exceed expectations, offering customers unmatched value and benefits for their power control needs. Choose the IXYH30N65C3H1 for superior performance and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the internal components of the transistor, ensuring reliability and durability.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower conduction losses and higher efficiency compared to P-channel types, making them a good choice for power control applications.

Maximum VCEsat: 2.7 V

Low VCEsat means lower power dissipation and higher efficiency in power control applications.

Nominal Turn Off Time (toff): 120 ns

Fast turn off time allows for efficient switching and control of power, improving overall performance of the transistor.

Maximum Power Dissipation (Abs): 270 W

With high power dissipation capability, this transistor can handle high power loads without overheating.

Maximum Collector-Emitter Voltage: 650 V

High maximum voltage rating allows for the transistor to be used in a wide range of power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXYH30N65C3H1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

120 ns

Nominal Turn On Time (ton):

59 ns

Maximum VCEsat:

2.7 V

Trade Compliance

IXYH30N65C3H1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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