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IXYF40N450

Littelfuse

IXYF40N450 by Littelfuse

Littelfuse IXYF40N450 is an N-CHANNEL IGBT with 4500V VCEsat, 60A IC, and 290W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 1128ns and high operating temperature range from -55°C to 150°C. Package style is IN-LINE with PLASTIC/EPOXY body material.

Median Price

$113.334

Lifecycle Status

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In-Stock Inventory

1k+

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Nova Conductors

Japan . 500 parts In-Stock

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$113.334

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Vyrian

USA . 641 parts In-Stock

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Speed Components Ltd

Israel . 32 parts In-Stock

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AZTECH Wire

Italy . 361 parts In-Stock

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$11.856

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Semicontronic

India . 509 parts In-Stock

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$13.050

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$12.724

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$12.658

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509

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Ampacity Inc.

Singapore . 1,038 parts In-Stock

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$32.050

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Aranea Global

USA . 100 parts In-Stock

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$111.067

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$106.624

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Continental Prestige Electronics

USA . 6,754 parts In-Stock

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$113.334

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Microchip USA

USA . 7,511 parts In-Stock

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$179.246

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Authorized Procurement Solutions

USA . 2,850 parts In-Stock

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2,850

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Argo Parts USA

USA . 653 parts In-Stock

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Overview

Unleash the power of innovation with the IXYF40N450 by Littelfuse. As a leader in the industry, Littelfuse delivers top-quality Insulated Gate Bipolar Transistors (IGBT) that guarantee superior performance and reliability. Whether you're looking to optimize power control or enhance efficiency, this N-CHANNEL transistor is your go-to solution. With its high maximum Collector-Emitter Voltage of 4500V and Maximum Power Dissipation of 290W, the IXYF40N450 offers unmatched value and benefits for a wide range of applications. Elevate your projects with Littelfuse and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Helps in providing insulation and protection to the internal components of the transistor, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs generally have better characteristics such as lower conduction losses, making them efficient for power control applications.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring optimal performance and efficiency in managing power flow.

Maximum VCEsat: 3.9 V

Low VCEsat voltage indicates lower power losses during operation, making the product energy-efficient.

Maximum Power Dissipation (Abs): 290 W

The high power dissipation capability allows the transistor to handle large power loads, making it suitable for high-power applications.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, ensuring reliability in demanding environments.

Maximum Collector-Emitter Voltage: 4500 V

High collector-emitter voltage rating allows the transistor to withstand high voltage conditions, making it versatile for different applications.

Maximum Gate-Emitter Voltage: 20 V

The maximum gate-emitter voltage rating ensures proper control over the transistor's switching behavior, enhancing its reliability.

Maximum Collector Current (IC): 60 A

High collector current rating enables the transistor to handle large current flows, making it suitable for high-power applications.

Minimum Operating Temperature: -55 °C

Can operate at low temperatures, ensuring versatility in various operating conditions.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXYF40N450 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

4500 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

1128 ns

Nominal Turn On Time (ton):

786 ns

Maximum VCEsat:

3.9 V

Trade Compliance

IXYF40N450 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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