Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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IRG4BC30WPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max Collector-Emitter Voltage of 600V and Max Power Dissipation of 100W. It has a Nominal Turn Off Time of 300ns, making it suitable for POWER CONTROL applications requiring fast switching speeds and high voltage handling capabilities.
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Assy Fe
Provides durability and protection for the transistor, ensuring long-term reliability.
Offers efficient power control capabilities for various applications.
Simplified design and ease of implementation for power control circuits.
Capable of handling high power levels, ideal for demanding applications.
Suitable for high voltage applications, providing flexibility in use.
Can handle high current loads, ensuring efficient power control.
Insulated Gate Bipolar Transistors (IGBT) IRG4BC30WPBF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies
Additional Features:
Case Connection:
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
Maximum Fall Time (tf):
Maximum Gate-Emitter Threshold Voltage:
Maximum Gate-Emitter Voltage:
JEDEC-95 Code:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
Nominal Turn Off Time (toff):
Nominal Turn On Time (ton):
IRG4BC30WPBF Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
ATMEGA328P-AU
Microchip Technology
ATMEGA328P-AU by Microchip: 8-bit RISC CPU, 20 MHz clock, 23 I/O lines. Ideal for industrial applications with SPI, TWI, USART connectivity and low power mode. Features include 2048 RAM bytes, 1024 EEPROM size, and 16384 ROM words.
2N7002,215
NXP Semiconductors
2N7002,215 by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS breakdown voltage of 60V and max drain current of 0.3A. It is used for switching applications in enhancement mode, operates b/w -65 to 150 °C, and has a max power dissipation of 0.2W.
NE555D
Philips Semiconductors
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
LL4148
Sensitron Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
BAV99
Rfe International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
First Components International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Weitron Technology
DS18B20
Maxim Integrated
DS18B20 by Maxim Integrated is a 12-bit digital temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, with ±0.5°C accuracy. Commonly used in applications requiring precise temperature monitoring like HVAC systems and industrial automation.
MBRM140T1G
Onsemi
MBRM140T1G by Onsemi is a Schottky rectifier diode with 40V max repetitive peak reverse voltage, 1A max output current, and 0.3V max forward voltage. It is used in applications requiring small outline surface mount diodes for efficient power management.
Taitron Components
LM317LMX/NOPB
National Semiconductor
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 8; Package Code: SOP; Terminal Form: GULL WING; Maximum Seated Height: 1.75 mm; Nominal Dropout Voltage-1: 3 V;
1N4148
RECTIFIER DIODE; Surface Mount: NO; Terminal Finish: MATTE TIN; Maximum Operating Temperature: 200 Cel; Maximum Output Current: .15 A; JESD-609 Code: e3;
SS14
Meritek Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358N
Kec
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
General Semiconductor
LM317T
Sgs-ates Componenti Electronici S P A
Other Regulators; No. of Terminals: 3; JESD-609 Code: e0; Terminal Position: SINGLE; Adjustability: ADJUSTABLE; Maximum Load Regulation (%): 1.5 %;
Daco Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Good-ark Electronics
RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Forward Voltage (VF): 1 V; No. of Phases: 1;
AB26TRB-32.768KHZ--T
Abracon
AB26TRB-32.768KHZ--T by Abracon is a crystal oscillator with 20 ppm frequency tolerance, 126% stability, and 35000 ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal frequency in surface mount configurations.
BSS138
Micro Commercial Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Position: DUAL;
TDB6HK180N16RRBOSA1
Infineon Technologies
TDB6HK180N16RRBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V VCEsat, 140A IC, and 515W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 410ns and high operating temperature range from -40°C to 150°C.
STGIPL14K60
STMicroelectronics
STGIPL14K60 by STMicroelectronics is an N-CHANNEL IGBT with 600V VCEsat, 2.5V max, and 14A IC. Ideal for MOTOR CONTROL applications, it has a turn-off time of 425ns and operates up to 125°C. Package: PLASTIC/EPOXY, RECTANGULAR shape with 38 terminals in THROUGH-HOLE form.
IKW25T120FKSA1
IKW25T120FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 50A. It has a nominal turn-off time of 790ns and is designed for power control applications. The transistor comes in a rectangular package with through-hole terminals, making it suitable for high-power switching operations at temperatures up to 150°C.
IKW75N60TXK
IKW75N60TXK by Infineon Technologies is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. It has a single configuration with built-in diode, ideal for power control applications. The transistor offers fast switching with 69ns turn-on time and 401ns turn-off time at a max operating temperature of 150°C.
IXGH30N120B3D1
Littelfuse
IXGH30N120B3D1 by Littelfuse is an N-CHANNEL IGBT with 1200V VCE, 30A IC, and 300W power dissipation. Ideal for power control applications, it features a built-in diode, 380ns fall time, and -55 to 150°C operating temperature range.
IKW30N60DTPXKSA1
IKW30N60DTPXKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 1.8V, IC of 53A, and Pmax of 200W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 279ns and high operating temperature range (-40 to 175°C).
HGTD1N120BNS9A
Harris Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 5.3 A; JESD-30 Code: R-PSSO-G2; Package Shape: RECTANGULAR;
APT35GT120JU2
Advanced Power Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 55 A; Additional Features: LOW CONDUCTION LOSS; Case Connection: ISOLATED;
STGP15M120F3
STGP15M120F3 by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 2.3V and a max collector-emitter voltage of 1200V. It is used for power control applications, offering a nominal turn off time of 406ns and a max collector current of 30A.
IKW50N65ES5XKSA1
Infineon IKW50N65ES5XKSA1 is an N-CHANNEL IGBT with VCEsat of 1.7V, IC of 80A, and Pmax of 274W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 198ns and high operating temperature range (-40 to 175°C). Package: PLASTIC/EPOXY, Shape: RECTANGULAR, Terminals: THROUGH-HOLE.
IRG7PH35UD-EP
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 50 A; Terminal Finish: MATTE TIN OVER NICKEL;
VS-CPV364M4FPBF
Vishay Intertechnology
VS-CPV364M4FPBF by Vishay Intertechnology is an N-CHANNEL IGBT with 600V VCEsat, 27A IC, and 63W power dissipation. Ideal for POWER CONTROL applications, it features a complex configuration, 240ns fall time, and -40 to 150°C operating temperature range.
FP10R12W1T4PBPSA1
Infineon Technologies' FP10R12W1T4PBPSA1 is an N-CHANNEL IGBT with 7 elements, max. collector-emitter voltage of 1200V, and max. collector current of 20A. It has a nominal turn off time of 500ns and turn on time of 108ns, ideal for power control applications at up to 175°C operating temperature.
IGP40N65H5XKSA1
Infineon's IGP40N65H5XKSA1 is an N-CHANNEL IGBT with 650V VCE, 74A IC, and 255W power dissipation. Ideal for high-power applications requiring efficient switching at up to 175°C operating temperature.
NGTB15N120FLWG
NGTB15N120FLWG by Onsemi is an N-CHANNEL IGBT with 156W power dissipation, 1200V collector-emitter voltage, and 30A collector current. Ideal for high-power applications requiring efficient switching capabilities at up to 150°C operating temperature.
IHW20N135R5XKSA1
IHW20N135R5XKSA1 by Infineon is an N-CHANNEL IGBT with 1350V VCE, 40A IC, and 288W power dissipation. Ideal for power control applications, it features a built-in diode, 450ns turn-off time, and operates b/w -40 to 175°C.
2PS18012E44G40113NOSA1
2PS18012E44G40113NOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage. Ideal for power control applications, it operates b/w -25°C to 60°C. Featuring a complex configuration and isolated case connection, this microelectronic assembly contains 8 elements made of silicon.
HGTG10N120BND
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 298 W; Maximum Collector Current (IC): 35 A; JESD-609 Code: e3;
APT65GP60JDQ2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 130 A; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON;
SKM195GB066D
Semikron International
SKM195GB066D by Semikron International is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 1.9V and can handle a Max Collector Current of 265A. Ideal for POWER CONTROL applications, it operates at up to 175°C and features a Nominal Turn Off Time of 569ns.
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IRG4PC50UDPBF
IRG4PC50UDPBF by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2V and a max IC of 55A. It is designed for POWER CONTROL applications, featuring a package style of FLANGE MOUNT and operating temperatures ranging from -55 to 150 °C.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 55 A; No. of Terminals: 3;
IRG4BC40WLPBF
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 40 A; Maximum Fall Time (tf): 110 ns;
IRG4BC40WLPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 40A. It has a power dissipation of 160W, making it suitable for power control applications. With a turn-off time of 294ns and turn-on time of 48ns, it offers efficient performance in high-power systems.
IRG4PC50FPBF
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 70 A; Nominal Turn Off Time (toff): 620 ns;
IRG4PC50FPBF by Infineon Technologies is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 70A max collector current. It has a 190ns max fall time, making it suitable for high-power applications like motor drives and inverters. The package style is flange mount with through-hole terminals.
IRG4PC50FDPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 70 A; Qualification: Not Qualified;
IRG4PC50FDPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max power dissipation of 200W. It has a single configuration with built-in diode, suitable for power control applications. With a nominal turn-off time of 660ns and max fall time of 210ns, it offers efficient switching performance in high-power systems.
IRG4BC30WPBF
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; Nominal Turn Off Time (toff): 300 ns;
IRG4PH50UDPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 45 A; JESD-30 Code: R-PSFM-T3; JEDEC-95 Code: TO-247AC;
IRG4PH50UDPBF by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a collector current of 45A. It has a nominal turn-off time of 570ns and turn-on time of 73ns, making it ideal for power control applications requiring fast switching speeds. The transistor comes in a rectangular package with through-hole terminals and built-in diode, suitable for flange mount installations.
IRG4BC30FD-SPBF
IRG4BC30FD-SPBF by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 31A max collector current. It has a built-in diode, 620ns turn-off time, and 100W power dissipation. Ideal for power control applications requiring fast switching capabilities in surface mount configurations.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 31 A; Package Body Material: PLASTIC/EPOXY;
IRG4PSH71UDPBF
Infineon's IRG4PSH71UDPBF is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 99A max collector current. It features a built-in diode, 330ns fall time, and 810ns turn off time. Ideal for power control applications with a max power dissipation of 350W at up to 150°C operating temperature.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 350 W; Maximum Collector Current (IC): 99 A; JESD-30 Code: R-PSIP-T3;
IRG4PC30KPBF
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 42 W; Maximum Collector Current (IC): 28 A; No. of Terminals: 3;
IRG4PC30KPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 28A. It is designed for MOTOR CONTROL applications, featuring a nominal turn-off time of 380ns and a max power dissipation of 42W.
IRG4BC40UPBF
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 40 A; No. of Elements: 1;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 40 A; Case Connection: COLLECTOR;
IRG4BC30W-S
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; No. of Elements: 1;
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