Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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SKM75GB12T4 by Semikron International is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 2.1V and can handle up to 110A of Collector Current. Ideal for POWER CONTROL applications due to its high Max Collector-Emitter Voltage of 1200V and operating temperature of 175°C.
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N-CHANNEL IGBTs typically offer lower conduction losses and higher efficiency compared to P-CHANNEL IGBTs, making them suitable for high power applications.
This low VCEsat value indicates that the IGBT has reduced saturation voltage, resulting in lower power dissipation and improved efficiency during operation.
With a high VCE rating, this IGBT can handle high voltage applications, providing reliable performance in power control systems.
The high collector current rating allows the IGBT to handle large amounts of current, making it suitable for power control applications requiring high current handling capacity.
The 20 V gate-emitter voltage rating ensures safe and reliable operation of the IGBT, protecting it from potential damage due to overvoltage situations.
Insulated Gate Bipolar Transistors (IGBT) SKM75GB12T4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Semikron International
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SKM75GB12T4 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Semikron Danfoss is a family-owned business, merged by SEMIKRON and Danfoss Silicon Power in 2022. In a world that is going electric, Semikron Danfoss technologies are more relevant than ever. With our innovative solutions for automotive, industrial and renewable applications we help the world utilize energy more efficiently and sustainable and thus to significantly reduce overall CO2 emissions – one of the biggest challenges the world faces today. Our power electronics product offerings include semiconductor devices, power modules, stacks and systems. We take care of our employees and create value for our customers by investing significantly in innovation, technology, capacity, and service to deliver best-in-industry performance and for a sustainable future.
LM7805CT/NOPB
National Semiconductor
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Maximum Voltage Tolerance: 5 %; Operating Temperature (TJ-Max): 125 Cel; Maximum Output Voltage-1: 5.25 V;
LL4148
Rfe International
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM7805CT
Fairchild Semiconductor
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;
MMBT3904LT1G
Onsemi
MMBT3904LT1G by Onsemi is a NPN BJT with max. collector-emitter voltage of 40V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its compact size, high transition frequency, and low power dissipation capabilities.
BAV99
MICRODIODE ELECTRONICS SHENZHEN CO LTD
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
ERJ2RKF1002X
Panasonic
Panasonic's ERJ2RKF1002X is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 compliance and operating temperature range of -55 to 155 °C.
BSS138
Good-ark Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 6 ohm; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;
General Semiconductor
E8WSDC12-32.768KTR
Ecliptek
PARALLEL - FUNDAMENTAL; Mounting Feature: SURFACE MOUNT; Frequency Tolerance: 20 ppm; Aging: 3 PPM/YEAR; Load Capacitance: 12.5 pF; Nominal Operating Frequency: .032768 MHz;
1N4148
International Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
STM32F401CDY6TR
STMicroelectronics
STM32F401CDY6TR by STMicroelectronics is a 32-bit microcontroller with 393216 ROM words, 50 MHz clock frequency, and 36 I/O lines. It is used in applications requiring high-speed processing, such as industrial automation and consumer electronics.
NXP Semiconductors
2N7002
Bytesonic Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Position: DUAL; Minimum Operating Temperature: -55 Cel;
1N4148WS
Formosa Microsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Rochester Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Weitron Technology
RECTIFIER DIODE; Surface Mount: NO; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; Maximum Output Current: .15 A; Terminal Finish: Tin/Lead (Sn/Pb);
ULN2003ADR
Texas Instruments
ULN2003ADR by Texas Instruments is a NPN BJT with 7 elements, max IC of 0.5A, and VCEsat of 1.6V. Ideal for switching applications in small outline packages with Gull Wing terminals.
LM358MX
LM358MX by Texas Instruments is a dual operational amplifier with a max input offset voltage of 9000 uV. It has a nominal voltage of 5V and a min voltage gain of 15000. This op amp is commonly used in applications requiring amplification and signal conditioning.
Surge Components
Gulf Semiconductor
IKW30N65EL5XKSA1
Infineon Technologies
IKW30N65EL5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 650V and Max Collector Current of 85A. It has a Nominal Turn Off Time of 520ns and Nominal Turn On Time of 44ns, making it ideal for POWER CONTROL applications requiring fast switching speeds. The transistor comes in a RECTANGULAR package style with THROUGH-HOLE terminals, suitable for FLANGE MOUNT installation.
FS200R12KT4RBOSA1
Infineon's FS200R12KT4RBOSA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 280A, and turn-off time of 600ns. Ideal for power control applications due to its UL recognized standard and operating temperature up to 175°C.
IKD06N65ET6ARMA1
Insulated Gate Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
FF450R12ME4PB11BOSA1
FF450R12ME4PB11BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a built-in diode, and thermistor. It has a max voltage of 1200V, max current of 675A, and turn-off time of 740ns. Ideal for applications requiring high power switching in industrial settings due to its robust design and fast switching capabilities.
NGTB03N60R2DT4G
NGTB03N60R2DT4G by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and IC of 9A, ideal for power control applications. It features a built-in diode, small outline package style, and can operate at temperatures up to 175°C. This transistor has a turn-off time of 105ns and is designed for surface mount assembly with gull wing terminals.
CM300DU-24NFH
Powerex
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 300 A; Transistor Element Material: SILICON; Terminal Position: UPPER;
IRG7PH42UD2-EP
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 60 A; No. of Terminals: 3; Case Connection: COLLECTOR;
IKW40N60H3FKSA1
IKW40N60H3FKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 249ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. Operates at a max temperature of 175°C in a PLASTIC/EPOXY package style.
IXDR35N60BD1
Littelfuse
IXDR35N60BD1 by Littelfuse is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 38A max collector current, and 390ns turn off time. Ideal for power control applications due to its single configuration with built-in diode and isolated case connection.
IXBK55N300
IXBK55N300 by Littelfuse is an N-CHANNEL IGBT with 3.2V VCEsat, 130A IC, and 625W power dissipation. Ideal for POWER CONTROL applications, it features a 3000V VCE max and -55 to 150°C operating temp range in a RECTANGULAR package with THROUGH-HOLE terminals.
FP35R12KT4B15BOSA1
FP35R12KT4B15BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.15V and a max power dissipation of 210W. It is commonly used for power control applications due to its high voltage rating (1200V) and fast turn on/off times (210ns/620ns).
IRG7PH50K10DPBF
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 400 W; Maximum Collector Current (IC): 90 A; Maximum Fall Time (tf): 110 ns; Maximum Gate-Emitter Threshold Voltage: 7.5 V;
NGTB25N120FL3WG
NGTB25N120FL3WG by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 50A IC, and 349W power dissipation. Ideal for power control applications, it features a built-in diode and operates b/w -55 to 175 °C. This FLANGE MOUNT device has a turn-off time of 282ns and turn-on time of 36ns.
IRGP50B60PDPBF
IRGP50B60PDPBF by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 370W power dissipation, and 75A max collector current. Ideal for power control applications, it features a single configuration with built-in diode in a rectangular package shape. Operating at up to 150°C, it offers fast rise time of 36ns and fall time of 65ns.
HGTG18N120BND
Intersil
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 390 W; Maximum Collector Current (IC): 18 A; Maximum Gate-Emitter Voltage: 20 V;
IRG7PH35UD-EP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 50 A; Terminal Finish: MATTE TIN OVER NICKEL;
CM600DU-12NFH
Mitsubishi Electric
Mitsubishi Electric's CM600DU-12NFH is a N-CHANNEL IGBT with 2 elements, each with built-in diode. It has a max VCEsat of 2.7V and can handle up to 600A collector current. Ideal for power control applications, this IGBT operates at a max temperature of 150°C and has an isolated case connection.
FS35R12KT3BPSA1
FP30R06W1E3B11BOMA1
Infineon Technologies' FP30R06W1E3B11BOMA1 is an N-CHANNEL IGBT with 7 elements, 600V max collector-emitter voltage, and 37A max collector current. It has a complex configuration for power control applications, featuring a rectangular package style with flange mount and UL approval. Nominal turn off time is 245ns while turn on time is 42ns.
AIKW75N60CTXKSA1
AIKW75N60CTXKSA1 by Infineon Technologies is an N-Channel IGBT with a max VCEsat of 2V and a max IC of 80A. It is designed for power control applications, featuring a nominal toff of 365ns and ton of 69ns. The transistor operates at temperatures ranging from -40°C to 175°C, making it suitable for high-power industrial systems.
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SKM75GB121D
Semikron International
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 500 W; Maximum Collector Current (IC): 75 A; Nominal Turn Off Time (toff): 280 ns;
SKM75GAL123D
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 400 W; Maximum Collector Current (IC): 75 A; Maximum Collector-Emitter Voltage: 1200 V;
SKM75GB123D
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 400 W; Maximum Collector Current (IC): 75 A; Package Body Material: UNSPECIFIED;
SKM75GD123D
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 350 W; Maximum Collector Current (IC): 75 A; Nominal Turn Off Time (toff): 450 ns;
SKM75GD123DL
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 350 W; Maximum Collector Current (IC): 75 A; Transistor Application: POWER CONTROL;
SKM75GDL123D
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 350 W; Maximum Collector Current (IC): 75 A; Transistor Element Material: SILICON;
SKM75GB173D
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 500 W; Maximum Collector Current (IC): 75 A; Package Body Material: UNSPECIFIED;
SKM75GB124D
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 450 W; Maximum Collector Current (IC): 100 A; Qualification: Not Qualified;
SKM75GB063D
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 350 W; Maximum Collector Current (IC): 100 A; Transistor Element Material: SILICON;
SKM75GAR123D
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 460 W; Maximum Collector Current (IC): 75 A; Package Style (Meter): FLANGE MOUNT;
SKM75GB17E4
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 125 A; Transistor Element Material: SILICON; Peak Reflow Temperature (C): NOT SPECIFIED;
SKM75GB128DN
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Terminal Form: UNSPECIFIED; No. of Elements: 2;
SKM75GB176DN
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 80 A; JESD-609 Code: e2; Qualification: Not Qualified;
SKM75GB128D
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Case Connection: ISOLATED; Reference Standard: UL RECOGNIZED;
SKM75GB176D
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 80 A; Maximum Collector-Emitter Voltage: 1700 V; Package Shape: RECTANGULAR;
SKM75GB12V
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 121 A; Case Connection: ISOLATED; Package Body Material: UNSPECIFIED;
SKM75GB07E3
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 99 A; Maximum Gate-Emitter Voltage: 20 V; Transistor Element Material: SILICON;
SKM75GB17E4H16
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 132 A; Transistor Application: POWER CONTROL; JESD-30 Code: R-XUFM-X7;
SKM75GB12F4
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 113 A; Case Connection: ISOLATED; Nominal Turn Off Time (toff): 346 ns;
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