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FGD5T120SH

Onsemi

FGD5T120SH by Onsemi

FGD5T120SH by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 3.6V and a collector-emitter voltage of 1200V. Ideal for general purpose switching applications, it has a turn-off time of 159.6ns and can handle a max collector current of 10A.

Median Price

$2.380

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 7,124 parts In-Stock

1+ parts

$2.380

100+ parts

$1.050

1k+ parts

$0.804

10k+ parts

$0.772

7,124

$2.380

$1.050

$0.804

$0.772

DigiKey

USA . 979 parts In-Stock

1+ parts

$2.380

100+ parts

$1.042

1k+ parts

$0.816

10k+ parts

$0.666

979

$2.380

$1.042

$0.816

$0.666

Newark

USA . 3,129 parts In-Stock

1+ parts

$2.700

100+ parts

$1.520

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-

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3,129

$2.700

$1.520

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Verical

USA . 7,500 parts In-Stock

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$1.144

7,500

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$1.144

Distributors (In-Stock)

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Nova Conductors

Japan . 100 parts In-Stock

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$0.789

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100

$0.789

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Digiode

USA . 2,138 parts In-Stock

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$1.510

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2,138

$1.510

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TME

Poland . 1,562 parts In-Stock

1+ parts

$2.200

100+ parts

$0.970

1k+ parts

$0.930

10k+ parts

-

1,562

$2.200

$0.970

$0.930

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Chip Stock

USA . 9,300 parts In-Stock

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9,300

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Vyrian

USA . 2,505 parts In-Stock

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2,505

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Cyclops Electronics Ltd

UK . 2,500 parts In-Stock

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2,500

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NAC Semi

USA . 2,500 parts In-Stock

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$1.430

2,500

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$1.430

Pride Electronics

USA . 800 parts In-Stock

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800

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Distributors (Availability)

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Corohmni

South Africa . 432 parts In-Stock

1+ parts

$0.773

100+ parts

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432

$0.773

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Argo Parts USA

USA . 4,489 parts In-Stock

1+ parts

$0.789

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4,489

$0.789

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Continental Prestige Electronics

USA . 3,501 parts In-Stock

1+ parts

$0.789

100+ parts

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1k+ parts

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$0.773

3,501

$0.789

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$0.773

Ampacity Inc.

Singapore . 2,630 parts In-Stock

1+ parts

$1.350

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2,630

$1.350

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Corphita

USA . 913 parts In-Stock

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$1.431

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913

$1.431

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Aztec Data Supply Inc.

USA . 5,038 parts In-Stock

1+ parts

$1.810

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5,038

$1.810

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Semicontronic

India . 2,792 parts In-Stock

1+ parts

$2.940

100+ parts

$2.866

1k+ parts

$2.852

10k+ parts

-

2,792

$2.940

$2.866

$2.852

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Microchip USA

USA . 7,000 parts In-Stock

1+ parts

$4.788

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7,000

$4.788

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Lixinc

USA . 9,428 parts In-Stock

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SupplyDigital Components

Austria . 7,947 parts In-Stock

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TANS Electronics

Latvia . 7,198 parts In-Stock

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iodParts Technologies Inc.

India . 5,466 parts In-Stock

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Problanco Electronics

Mexico . 3,782 parts In-Stock

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Supply Digital

USA . 2,319 parts In-Stock

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Kulean Microsystems

USA . 2,062 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Assy Fe

Spain . 1,778 parts In-Stock

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UHIMA Technologies

Türkiye . 746 parts In-Stock

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746

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Overview

Discover the cutting-edge FGD5T120SH by Onsemi, a top-tier Insulated Gate Bipolar Transistor designed for high-performance applications. With a durable plastic/epoxy body and N-channel configuration, this single transistor is ideal for general purpose switching. Boasting a maximum VCEsat of 3.6V and a maximum collector-emitter voltage of 1200V, this transistor offers unbeatable reliability and efficiency. Whether you're in the automotive, industrial, or consumer electronics industry, the FGD5T120SH delivers exceptional power dissipation of 69W and a quick turn-off time of 159.6ns. Upgrade your systems today with the innovative technology of Onsemi's FGD5T120SH.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the IGBT lightweight and durable, making it suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower on-state resistance and faster switching speeds compared to P-channel IGBTs, making them efficient for high-performance applications.

Configuration: SINGLE

The single configuration simplifies the design and integration of the IGBT into circuits, making it easier to use.

Transistor Application: GENERAL PURPOSE SWITCHING

The IGBT is capable of handling a wide range of switching applications, making it versatile for various electronic designs.

Surface Mount: YES

The surface-mount feature allows for easy and quick installation onto a PCB, saving space and simplifying manufacturing processes.

Maximum VCEsat: 3.6 V

The low VCEsat value indicates minimal power loss during operation, leading to higher efficiency and energy savings.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient use of board space and easy placement in a circuit layout.

Nominal Turn Off Time (toff): 159.6 ns

The quick turn-off time ensures fast switching speeds, reducing switching losses and improving overall performance.

Maximum Power Dissipation (Abs): 69 W

The high power dissipation capability allows the IGBT to handle high voltage and current levels without overheating, ensuring reliability.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature range makes the IGBT suitable for applications that require robust performance in demanding environments.

Maximum Collector-Emitter Voltage: 1200 V

The high collector-emitter voltage rating enables the IGBT to handle high voltage levels, making it suitable for power electronics applications.

Maximum Gate-Emitter Voltage: 25 V

The maximum gate-emitter voltage rating ensures the IGBT can withstand the required voltage for proper gate control, allowing for reliable switching.

Maximum Collector Current (IC): 10 A

The high collector current rating allows the IGBT to handle large amounts of current, making it suitable for high-power applications.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature range enables the IGBT to function in extreme cold conditions, expanding its range of applications.

Maximum Gate-Emitter Threshold Voltage: 4.5 V

The gate-emitter threshold voltage ensures reliable turn-on of the IGBT, enabling precise control of switching operation.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGD5T120SH attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

4.5 V

Maximum Gate-Emitter Voltage:

25 V

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

GENERAL PURPOSE SWITCHING

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

159.6 ns

Nominal Turn On Time (ton):

44.8 ns

Maximum VCEsat:

3.6 V

Trade Compliance

FGD5T120SH Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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