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IGW08T120

Infineon Technologies

IGW08T120 by Infineon Technologies

IGW08T120 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 16A. It is designed for power control applications, featuring a nominal turn-off time of 710ns and a max power dissipation of 70W. The package style is flange mount with through-hole terminals, making it suitable for high-power electronic systems.

Median Price

$2.260

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,662 parts In-Stock

1+ parts

$1.000

100+ parts

$0.980

1k+ parts

$0.960

10k+ parts

-

2,662

$1.000

$0.980

$0.960

-

Mouser Electronics

USA . 164 parts In-Stock

1+ parts

$3.520

100+ parts

$2.400

1k+ parts

$2.130

10k+ parts

$2.070

164

$3.520

$2.400

$2.130

$2.070

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 822 parts In-Stock

1+ parts

$0.950

100+ parts

-

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-

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822

$0.950

-

-

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$2.037

100+ parts

-

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-

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10

$2.037

-

-

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Vyrian

USA . 1,100 parts In-Stock

1+ parts

-

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1,100

-

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Distributors (Availability)

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Corohmni

South Africa . 174 parts In-Stock

1+ parts

$0.447

100+ parts

-

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-

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174

$0.447

-

-

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Ampacity Inc.

Singapore . 1,224 parts In-Stock

1+ parts

$0.850

100+ parts

-

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-

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1,224

$0.850

-

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Semicontronic

India . 1,083 parts In-Stock

1+ parts

$0.850

100+ parts

$0.829

1k+ parts

$0.824

10k+ parts

-

1,083

$0.850

$0.829

$0.824

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Corphita

USA . 772 parts In-Stock

1+ parts

$0.900

100+ parts

-

1k+ parts

-

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772

$0.900

-

-

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Modulus Dynamics

Lithuania . 13,077 parts In-Stock

1+ parts

$1.312

100+ parts

$1.260

1k+ parts

$1.207

10k+ parts

-

13,077

$1.312

$1.260

$1.207

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Continental Prestige Electronics

USA . 3,995 parts In-Stock

1+ parts

$2.037

100+ parts

-

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10k+ parts

$1.996

3,995

$2.037

-

-

$1.996

Argo Parts USA

USA . 2,996 parts In-Stock

1+ parts

$2.037

100+ parts

-

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2,996

$2.037

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$2.037

100+ parts

-

1k+ parts

$1.935

10k+ parts

$1.894

2,000

$2.037

-

$1.935

$1.894

Andel Nordic

Denmark . 1,200 parts In-Stock

1+ parts

$52.150

100+ parts

-

1k+ parts

$36.504

10k+ parts

$36.504

1,200

$52.150

-

$36.504

$36.504

Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

-

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A-Z Elektronik GmbH

Germany . 7,809 parts In-Stock

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7,809

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Alle Elektronik GmbH

Germany . 1,306 parts In-Stock

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1,306

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Overview

Upgrade your power control with the IGW08T120 from Infineon Technologies. As a leading manufacturer in insulated gate bipolar transistors (IGBT), Infineon ensures top-notch quality and reliability in every product. The IGW08T120 offers a single-channel configuration with a maximum collector-emitter voltage of 1200V, making it ideal for high-power applications. With a nominal turn-off time of 710ns and a maximum power dissipation of 70W, this transistor delivers efficient performance and long-lasting durability. Trust Infineon's expertise and elevate your power control systems today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body helps provide a lightweight and durable construction for the IGBT.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower ON-state resistance and are more efficient for power control applications.

Configuration: SINGLE

The single configuration simplifies the design and integration of the IGBT into power control systems.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT is optimized for efficient and reliable performance.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting and integration into various electronic systems.

Nominal Turn Off Time (toff): 710 ns

The fast turn-off time of 710 ns ensures efficient switching and control of power in the circuit.

Maximum Power Dissipation (Abs): 70 W

With a high maximum power dissipation of 70W, this IGBT can handle high power loads without overheating.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows for reliable operation in a wide range of environments.

Maximum Collector-Emitter Voltage: 1200 V

The high maximum collector-emitter voltage of 1200V enables this IGBT to be used in high voltage applications.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistor elements, providing stable and consistent performance.

Maximum Gate-Emitter Voltage: 20 V

The maximum gate-emitter voltage of 20V ensures proper gate control and stability during operation.

Maximum Collector Current (IC): 16 A

The high maximum collector current of 16A allows for the handling of significant power loads in the circuit.

Maximum Gate-Emitter Threshold Voltage: 6.5 V

The gate-emitter threshold voltage of 6.5V ensures precise switching and control of the IGBT.

Terminal Finish: TIN

The tin terminal finish provides a reliable and durable connection for the IGBT in the electronic system.

Terminal Position: SINGLE

The single terminal position simplifies the installation and connection of the IGBT in the circuit.

Case Connection: COLLECTOR

The case connection to the collector helps with proper heat dissipation and thermal management for the IGBT.

Nominal Turn On Time (ton): 66 ns

The fast turn-on time of 66 ns ensures quick response and efficient power control in the circuit.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IGW08T120 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

710 ns

Nominal Turn On Time (ton):

66 ns

Trade Compliance

IGW08T120 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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