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SGB02N120ATMA1

Infineon Technologies

SGB02N120ATMA1 by Infineon Technologies

SGB02N120ATMA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 6.2A. It has a nominal turn-off time of 375ns, making it suitable for power control applications requiring fast switching speeds. The transistor comes in a small outline package with gull wing terminals for surface mount assembly.

Median Price

$1.352

Lifecycle Status

EOL

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

$1.330

1k+ parts

$1.100

10k+ parts

$0.984

4,000

-

$1.330

$1.100

$0.984

Verical

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.375

10k+ parts

$1.230

4,000

-

-

$1.375

$1.230

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 647 parts In-Stock

1+ parts

$1.036

100+ parts

-

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647

$1.036

-

-

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Nova Conductors

Japan . 15 parts In-Stock

1+ parts

$1.370

100+ parts

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15

$1.370

-

-

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TME

Poland . 57,000 parts In-Stock

1+ parts

-

100+ parts

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$1.140

10k+ parts

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57,000

-

-

$1.140

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Vyrian

USA . 4,246 parts In-Stock

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4,246

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Chip Stock

USA . 3,816 parts In-Stock

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3,816

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Distributors (Availability)

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Ampacity Inc.

Singapore . 10,887 parts In-Stock

1+ parts

$0.930

100+ parts

-

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-

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10,887

$0.930

-

-

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Semicontronic

India . 10,836 parts In-Stock

1+ parts

$0.930

100+ parts

$0.907

1k+ parts

$0.902

10k+ parts

-

10,836

$0.930

$0.907

$0.902

-

Corphita

USA . 796 parts In-Stock

1+ parts

$0.981

100+ parts

-

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796

$0.981

-

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Aztec Data Supply Inc.

USA . 104 parts In-Stock

1+ parts

$1.030

100+ parts

-

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104

$1.030

-

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Argo Parts USA

USA . 2,060 parts In-Stock

1+ parts

$1.370

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2,060

$1.370

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Continental Prestige Electronics

USA . 1,428 parts In-Stock

1+ parts

$1.370

100+ parts

-

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10k+ parts

$1.343

1,428

$1.370

-

-

$1.343

Netroflash

USA . 50 parts In-Stock

1+ parts

$1.370

100+ parts

$1.343

1k+ parts

-

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50

$1.370

$1.343

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$1.711

100+ parts

$1.625

1k+ parts

$1.625

10k+ parts

-

2,500

$1.711

$1.625

$1.625

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Modulus Dynamics

Lithuania . 24,285 parts In-Stock

1+ parts

$1.874

100+ parts

$1.799

1k+ parts

$1.724

10k+ parts

-

24,285

$1.874

$1.799

$1.724

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Corohmni

South Africa . 639 parts In-Stock

1+ parts

$1.926

100+ parts

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639

$1.926

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Microchip USA

USA . 5,607 parts In-Stock

1+ parts

$8.957

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5,607

$8.957

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AZTECH Wire

Italy . 398 parts In-Stock

1+ parts

$10.970

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398

$10.970

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Perfect Parts

USA . 8,971 parts In-Stock

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8,971

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Overview

Elevate your power control applications with the SGB02N120ATMA1 by Infineon Technologies. Crafted with precision and quality, this N-channel insulated gate bipolar transistor offers unparalleled performance and reliability. Whether you're looking to optimize power efficiency or enhance system reliability, this single configuration IGBT is designed to meet your needs. With a maximum collector-emitter voltage of 1200V and a nominal turn-off time of 375ns, this transistor is ideal for a wide range of applications. Trust in Infineon Technologies to deliver superior products that bring value and benefits to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-CHANNEL

Offers high conductivity and efficiency for power control applications.

Configuration: SINGLE

Simplifies the design and integration process, making it easier to use in various applications.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring reliable and efficient performance.

Surface Mount: YES

Enables easy and efficient PCB assembly, saving time and reducing production costs.

Package Shape: RECTANGULAR

Optimal shape for efficient placement and mounting on circuit boards.

Nominal Turn Off Time (toff): 375 ns

Fast turn-off time enhances overall performance and efficiency of power control applications.

No. of Terminals: 2

Simplified connection and integration into circuitry.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for a wide range of operating environments.

Maximum Collector-Emitter Voltage: 1200 V

Capable of handling high voltage applications with ease and reliability.

Transistor Element Material: SILICON

High-quality material that ensures reliable performance and long-term durability.

Maximum Collector Current (IC): 6.2 A

Able to handle moderate current loads efficiently and effectively.

Terminal Finish: TIN

Provides corrosion resistance and optimal electrical conductivity for reliable connections.

Terminal Position: SINGLE

Simplifies the connection process and reduces the risk of errors during installation.

Case Connection: COLLECTOR

Optimal connection point for efficient current flow and power control.

Nominal Turn On Time (ton): 40 ns

Fast turn-on time for quick and efficient power control operations.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) SGB02N120ATMA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

375 ns

Nominal Turn On Time (ton):

40 ns

Trade Compliance

SGB02N120ATMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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