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IXGH60N60C3D1

Littelfuse

IXGH60N60C3D1 by Littelfuse

IXGH60N60C3D1 by Littelfuse is an N-CHANNEL IGBT with a max VCEsat of 2.5V and a max collector current (IC) of 75A. It is commonly used in power control applications due to its high power dissipation of 380W and max operating temperature of 150°C.

Median Price

$9.762

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Farnell

UK . 148 parts In-Stock

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$8.450

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$6.030

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$5.910

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$8.450

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Newark

USA . 510 parts In-Stock

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$15.180

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$9.280

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$8.500

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$15.180

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$8.500

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Verical

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$11.074

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$11.046

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TTI Europe

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$7.093

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Nova Conductors

Japan . 200 parts In-Stock

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$8.385

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NAC Semi

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$15.450

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$14.260

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Vyrian

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IBS Electronics

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$18.934

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$18.639

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Advanced Electronics

New Zealand . 450 parts In-Stock

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$0.668

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$0.608

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$0.548

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$0.668

$0.608

$0.548

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Andel Nordic

Denmark . 26 parts In-Stock

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$1.740

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$1.670

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$1.670

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$1.670

Ampacity Inc.

Singapore . 183 parts In-Stock

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Semicontronic

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$5.879

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$5.849

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Aranea Global

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$8.217

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$7.889

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Continental Prestige Electronics

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$9.410

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$6.580

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Component Stockers USA

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$9.720

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$8.400

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$6.810

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Microchip USA

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iodParts Technologies Inc.

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Glotronic Ltd.

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Perfect Parts

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Authorized Procurement Solutions

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Overview

Discover the power of the IXGH60N60C3D1 by Littelfuse, the industry-leading manufacturer known for its exceptional quality and reliability. As part of the Insulated Gate Bipolar Transistors (IGBT) category, this single-channel transistor with a built-in diode offers unparalleled power control for a wide range of applications. With a maximum collector-emitter voltage of 600V and a maximum collector current of 75A, this product delivers impressive performance. Whether you're looking to optimize power efficiency or enhance control, the IXGH60N60C3D1 is the ideal choice. Trust Littelfuse to provide top-notch solutions that deliver value, benefits, and advantages to customers like you.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides excellent insulation and durability, making the product resistant to electrical and mechanical stress.

Polarity or Channel Type: N-CHANNEL

This allows for efficient power control and high performance in various applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and enhances efficiency by providing a path for reverse current flow, improving overall power control.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this product offers reliable and precise control over electrical power, ensuring optimal performance.

Maximum VCEsat: 2.5 V

The low VCEsat value indicates minimal voltage drop across the collector-emitter junction, minimizing power loss and improving overall efficiency.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration and placement in various circuits, optimizing space utilization.

Terminal Form: THROUGH-HOLE

The through-hole terminals facilitate simple and secure soldering connections, ensuring reliable electrical contact.

No. of Elements: 1

This single-element configuration simplifies circuit design and reduces complexity, making it easier to integrate into systems.

Nominal Turn Off Time (toff): 198 ns

The fast turn-off time enables rapid switching, minimizing power loss during transitions and improving overall efficiency.

No. of Terminals: 3

The three terminals provide easy connections for the necessary external components and enable efficient control of power flow.

Maximum Power Dissipation (Abs): 380 W

The high power dissipation capability allows for handling significant power loads, making it suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

The flange mount style ensures secure attachment and efficient heat dissipation, helping to maintain optimal operating temperatures.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this product can withstand demanding conditions and deliver reliable performance.

Maximum Collector-Emitter Voltage: 600 V

The high maximum voltage rating allows for safe handling and control of high-power circuits, making it suitable for power control applications.

Transistor Element Material: SILICON

Silicon offers excellent thermal properties, enabling efficient heat dissipation, and ensures reliable performance in demanding conditions.

Maximum Gate-Emitter Voltage: 20 V

The high maximum gate-emitter voltage rating provides flexibility and compatibility with various control circuitry, enhancing versatility.

Minimum Operating Temperature: -55 °C

With a low minimum operating temperature, this product can function reliably in extreme cold environments.

Maximum Collector Current (IC): 75 A

The high maximum collector current rating allows for handling substantial current flow, enabling it to control high-power circuits effectively.

Maximum Gate-Emitter Threshold Voltage: 5.5 V

The gate-emitter threshold voltage ensures proper gate control, optimizing the switching characteristics of the device.

Terminal Finish: MATTE TIN

The matte tin finish enhances solderability and provides corrosion resistance, ensuring reliable electrical connections over an extended period.

Terminal Position: SINGLE

The single terminal position simplifies circuit design and aids in easy integration into systems.

Case Connection: COLLECTOR

The case connection at the collector terminal facilitates efficient heat dissipation, ensuring reliable operation under high-power conditions.

Maximum Time At Peak Reflow Temperature (s): 10

The product can withstand the recommended peak reflow temperature for up to 10 seconds, allowing for reliable soldering during assembly.

Peak Reflow Temperature °C: 260

The recommended peak reflow temperature of 260°C ensures proper soldering and secure connections during the manufacturing process.

Nominal Turn On Time (ton): 54 ns

The fast turn-on time enables quick activation and response, making it suitable for time-sensitive applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXGH60N60C3D1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

5.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

198 ns

Nominal Turn On Time (ton):

54 ns

Maximum VCEsat:

2.5 V

Trade Compliance

IXGH60N60C3D1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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