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IRG4BC30KD-SPBF

International Rectifier

IRG4BC30KD-SPBF by International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 28 A; Maximum Operating Temperature: 150 Cel;

Median Price

$4.245

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4

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Nova Conductors

Japan . 500 parts In-Stock

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$3.037

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$3.037

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Voyager Components

USA . 5 parts In-Stock

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$5.454

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Digiode

USA . 373 parts In-Stock

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Vyrian

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Modulus Dynamics

Lithuania . 7,866 parts In-Stock

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$0.721

100+ parts

$0.692

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$0.663

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7,866

$0.721

$0.692

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Corohmni

South Africa . 548 parts In-Stock

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$0.792

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Advanced Electronics

New Zealand . 150 parts In-Stock

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$1.313

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$1.195

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$1.077

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$1.313

$1.195

$1.077

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Aztec Data Supply Inc.

USA . 896 parts In-Stock

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$1.820

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$1.820

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Continental Prestige Electronics

USA . 6,899 parts In-Stock

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$3.037

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$2.976

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$3.037

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Netroflash

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$3.037

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Argo Parts USA

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AZTECH Wire

Italy . 581 parts In-Stock

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Semicontronic

India . 353 parts In-Stock

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$15.050

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$14.674

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$14.598

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353

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Ampacity Inc.

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$34.050

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QUARKTWIN TECHNOLOGY LTD

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Lixinc

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Authorized Procurement Solutions

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Glotronic Ltd.

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Perfect Parts

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Corphita

USA . 720 parts In-Stock

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Microchip USA

USA . 272 parts In-Stock

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IRG4BC30KD-SPBF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from International Rectifier

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Fall Time (tf):

120 ns

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

370 ns

Nominal Turn On Time (ton):

100 ns

Trade Compliance

IRG4BC30KD-SPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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