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IRG4BC30FD-SPBF

Infineon Technologies

IRG4BC30FD-SPBF by Infineon Technologies

IRG4BC30FD-SPBF by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 31A max collector current. It has a built-in diode, 620ns turn-off time, and 100W power dissipation. Ideal for power control applications requiring fast switching capabilities in surface mount configurations.

Median Price

$2.080

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,804 parts In-Stock

1+ parts

$2.080

100+ parts

$1.960

1k+ parts

$1.770

10k+ parts

-

1,804

$2.080

$1.960

$1.770

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 46 parts In-Stock

1+ parts

$1.971

100+ parts

-

1k+ parts

-

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-

46

$1.971

-

-

-

Digiode

USA . 240 parts In-Stock

1+ parts

$1.976

100+ parts

-

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-

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240

$1.976

-

-

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Voyager Components

USA . 27 parts In-Stock

1+ parts

$7.587

100+ parts

-

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-

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27

$7.587

-

-

-

Chip Stock

USA . 27,500 parts In-Stock

1+ parts

-

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27,500

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Vyrian

USA . 1,392 parts In-Stock

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1,392

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 1,023 parts In-Stock

1+ parts

$0.536

100+ parts

-

1k+ parts

-

10k+ parts

-

1,023

$0.536

-

-

-

Argo Parts USA

USA . 2,830 parts In-Stock

1+ parts

$1.770

100+ parts

-

1k+ parts

-

10k+ parts

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2,830

$1.770

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-

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Continental Prestige Electronics

USA . 256 parts In-Stock

1+ parts

$1.770

100+ parts

-

1k+ parts

-

10k+ parts

$1.735

256

$1.770

-

-

$1.735

Ampacity Inc.

Singapore . 1,696 parts In-Stock

1+ parts

$1.770

100+ parts

-

1k+ parts

-

10k+ parts

-

1,696

$1.770

-

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Semicontronic

India . 1,321 parts In-Stock

1+ parts

$1.770

100+ parts

$1.726

1k+ parts

$1.717

10k+ parts

-

1,321

$1.770

$1.726

$1.717

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Corphita

USA . 163 parts In-Stock

1+ parts

$1.872

100+ parts

-

1k+ parts

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10k+ parts

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163

$1.872

-

-

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Modulus Dynamics

Lithuania . 10,795 parts In-Stock

1+ parts

$1.879

100+ parts

$1.804

1k+ parts

$1.729

10k+ parts

-

10,795

$1.879

$1.804

$1.729

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$1.932

100+ parts

-

1k+ parts

$1.854

10k+ parts

-

1,000

$1.932

-

$1.854

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Corohmni

South Africa . 6 parts In-Stock

1+ parts

$1.932

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-

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6

$1.932

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-

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RC Electronics

USA . 48,611 parts In-Stock

1+ parts

-

100+ parts

$1.810

1k+ parts

$1.650

10k+ parts

$1.600

48,611

-

$1.810

$1.650

$1.600

Perfect Parts

USA . 7,116 parts In-Stock

1+ parts

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7,116

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Microchip USA

USA . 6,675 parts In-Stock

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6,675

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

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5,000

-

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Glotronic Ltd.

UK . 1,965 parts In-Stock

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1,965

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Assy Fe

Spain . 1,045 parts In-Stock

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1,045

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Kepictronics

USA . 402 parts In-Stock

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402

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Infinite Electronics LLP (Excess)

. 56 parts In-Stock

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-

100+ parts

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56

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Overview

Unlock the power of innovation with the IRG4BC30FD-SPBF by Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies delivers top-quality Insulated Gate Bipolar Transistors that are ideal for power control applications. With a single configuration and built-in diode, this transistor offers unmatched efficiency and reliability. Whether you're working on industrial machinery or automotive systems, the IRG4BC30FD-SPBF provides the performance and durability you need to succeed. Trust in Infineon Technologies to bring your projects to life with cutting-edge technology and exceptional value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and can withstand high temperatures, making it suitable for demanding applications.

Transistor Application: POWER CONTROL

Designed for power control applications, this IGBT is ideal for controlling high levels of electrical power efficiently.

Maximum Power Dissipation (Abs): 100 W

With a high maximum power dissipation of 100 W, this IGBT can handle significant power levels without overheating.

Maximum Collector-Emitter Voltage: 600 V

The high maximum collector-emitter voltage of 600 V allows for the IGBT to be used in a variety of high voltage applications.

Maximum Gate-Emitter Voltage: 20 V

The maximum gate-emitter voltage of 20 V ensures proper gate control and protection, enhancing the reliability of the IGBT.

Maximum Collector Current (IC): 31 A

With a maximum collector current of 31 A, this IGBT can handle high current loads efficiently.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IRG4BC30FD-SPBF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

620 ns

Nominal Turn On Time (ton):

69 ns

Trade Compliance

IRG4BC30FD-SPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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