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6MS24017P43W41646NOSA1

Infineon Technologies

6MS24017P43W41646NOSA1 by Infineon Technologies

6MS24017P43W41646NOSA1 by Infineon Technologies is an N-Channel IGBT with 12 elements. It has a max collector-emitter voltage of 1700V and operates b/w -25°C to 55°C. Ideal for power control applications, this surface-mount transistor features a silicon element in a rectangular package style.

Median Price

$24,704.060

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1 parts In-Stock

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$24,704.060

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1

$24,704.060

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Distributors (In-Stock)

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Digiode

USA . 574 parts In-Stock

1+ parts

$24,082.804

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574

$24,082.804

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Nova Conductors

Japan . 750 parts In-Stock

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$25,099.330

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750

$25,099.330

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Vyrian

USA . 10,148 parts In-Stock

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VNN

France . 875 parts In-Stock

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875

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 3,037 parts In-Stock

1+ parts

$1.744

100+ parts

$1.674

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$1.604

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3,037

$1.744

$1.674

$1.604

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AZTECH Wire

Italy . 515 parts In-Stock

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$8.789

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515

$8.789

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Ampacity Inc.

Singapore . 1 parts In-Stock

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$21,547.770

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Corphita

USA . 754 parts In-Stock

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$22,815.288

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$22,815.288

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Aranea Global

USA . 100 parts In-Stock

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$24,597.343

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$23,613.450

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100

$24,597.343

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$23,613.450

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Continental Prestige Electronics

USA . 3,011 parts In-Stock

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$25,099.330

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$24,597.343

3,011

$25,099.330

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$24,597.343

Argo Parts USA

USA . 673 parts In-Stock

1+ parts

$25,099.330

100+ parts

$24,848.337

1k+ parts

$24,597.343

10k+ parts

$24,346.350

673

$25,099.330

$24,848.337

$24,597.343

$24,346.350

Microchip USA

USA . 353 parts In-Stock

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$25,099.830

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$25,099.830

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Overview

Unlock the power of reliable and efficient performance with the 6MS24017P43W41646NOSA1 from Infineon Technologies. This Insulated Gate Bipolar Transistor (IGBT) boasts top-notch quality and cutting-edge technology, making it the ideal choice for power control applications. With its N-Channel polarity and complex configuration, this transistor offers unmatched versatility and durability. Experience seamless integration with its surface mount feature and compact rectangular package shape. Trust in Infineon's expertise to deliver superior products that guarantee optimal performance and reliability, providing you with the value and benefits you need to succeed in your projects.

Feature Benefit Bullets

Polarity or Channel Type: N-Channel

N-Channel IGBTs are known for having better conductivity and efficiency compared to P-Channel IGBTs, making them a good choice for power control applications.

Configuration: COMPLEX

Complex configuration allows for better performance in managing high power loads and controlling complex electrical systems.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring reliable and efficient operation in managing power flow and voltage regulation.

Surface Mount: YES

Surface mount capability offers easier installation and space-saving benefits, making it ideal for compact electronic designs.

Package Shape: RECTANGULAR

Rectangular shape provides ease of mounting and integration into circuit boards, enhancing convenience in assembly and maintenance.

No. of Elements: 12

Having 12 elements allows for increased power handling capacity and improved performance in managing multiple circuits simultaneously.

Package Style (Meter): MICROELECTRONIC ASSEMBLY

Microelectronic assembly style ensures precise and reliable connections, contributing to overall stability and longevity of the product.

Maximum Operating Temperature: 55 °C

High maximum operating temperature ensures durability and reliability under various operating conditions, making it suitable for industrial applications.

Maximum Collector-Emitter Voltage: 1700 V

High collector-emitter voltage rating enables handling of higher voltages, making it well-suited for applications requiring high voltage control.

Transistor Element Material: SILICON

Silicon material offers superior performance and efficiency, ensuring reliable operation and stable performance over extended periods.

Minimum Operating Temperature: -25 °C

Low minimum operating temperature allows for reliable performance even in colder environments, increasing versatility and usability of the product.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) 6MS24017P43W41646NOSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Maximum Collector-Emitter Voltage:

1700 V

Configuration:

JESD-30 Code:

R-XXMA-X

No. of Elements:

12

Maximum Operating Temperature:

55 Cel

Minimum Operating Temperature:

-25 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

UNSPECIFIED

Terminal Position:

UNSPECIFIED

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Trade Compliance

6MS24017P43W41646NOSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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