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IXXX160N65B4

Littelfuse

IXXX160N65B4 by Littelfuse

IXXX160N65B4 by Littelfuse is an N-CHANNEL IGBT with 650V VCE, 310A IC, and 1.8V VCEsat. Ideal for POWER CONTROL applications, it has a TOFF of 380ns and TON of 93ns. Suitable for high-power systems requiring efficient switching capabilities.

Median Price

$24.700

Lifecycle Status

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1k+

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Chip1Stop

Japan . 30 parts In-Stock

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$24.700

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$20.140

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DigiKey

USA . 690 parts In-Stock

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$27.130

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$17.508

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$16.639

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$27.130

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$16.639

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Mouser Electronics

USA . 214 parts In-Stock

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$27.130

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$27.130

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Arrow

USA . 210 parts In-Stock

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$16.600

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$16.240

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Verical

USA . 210 parts In-Stock

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$16.600

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$16.240

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Nova Conductors

Japan . 150 parts In-Stock

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$14.019

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Vyrian

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Aztec Data Supply Inc.

USA . 337 parts In-Stock

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$1.124

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$1.124

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Corohmni

South Africa . 163 parts In-Stock

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$1.297

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Continental Prestige Electronics

USA . 320 parts In-Stock

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$14.019

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$13.739

320

$14.019

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$13.739

Advanced Electronics

New Zealand . 2,500 parts In-Stock

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$16.252

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$14.951

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$14.010

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$16.252

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Ampacity Inc.

Singapore . 176 parts In-Stock

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$20.370

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Semicontronic

India . 176 parts In-Stock

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$20.370

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$19.861

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$19.759

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Microchip USA

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$46.690

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Argo Parts USA

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Netroflash

USA . 500 parts In-Stock

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$13.739

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$13.318

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$13.038

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$13.739

$13.318

$13.038

Authorized Procurement Solutions

USA . 500 parts In-Stock

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Perfect Parts

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Overview

Upgrade your power control systems with the IXXX160N65B4 Insulated Gate Bipolar Transistor from Littelfuse. As a trusted manufacturer in the industry, Littelfuse delivers top-quality products that guarantee reliability and performance. The N-channel configuration and high maximum collector-emitter voltage of 650V make this IGBT ideal for various power control applications. With a maximum power dissipation of 940W and a fast turn-off time of 380ns, this transistor offers superior efficiency and precision. Trust Littelfuse to provide you with the cutting-edge technology you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the internal components of the IGBT, ensuring reliability and durability.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs are known for their high efficiency and fast switching speeds, making them suitable for power control applications.

Maximum VCEsat: 1.8 V

With a low VCEsat value, this IGBT offers reduced power losses and therefore improved efficiency in power control operations.

Maximum Power Dissipation (Abs): 940 W

This IGBT can handle high power dissipation levels, making it suitable for demanding power control applications.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this IGBT can withstand elevated temperatures in industrial environments without compromising performance.

Maximum Collector-Emitter Voltage: 650 V

The high collector-emitter voltage rating of this IGBT allows for safe operation in high voltage applications, providing robust protection against voltage spikes.

Maximum Collector Current (IC): 310 A

With a high collector current rating, this IGBT can handle large current flows, making it suitable for high power applications.

Nominal Turn On Time (ton): 93 ns

The fast turn on time of this IGBT helps in achieving precise and efficient power control, allowing for quick response times in switching operations.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXXX160N65B4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

380 ns

Nominal Turn On Time (ton):

93 ns

Maximum VCEsat:

1.8 V

Trade Compliance

IXXX160N65B4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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