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IXXX200N60C3

IXYS Corporation

IXXX200N60C3 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1630 W; Maximum Collector Current (IC): 340 A; Terminal Finish: Matte Tin (Sn);

Median Price

$18.280

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 750 parts In-Stock

1+ parts

$18.280

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750

$18.280

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Chip Stock

USA . 625 parts In-Stock

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625

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Vyrian

USA . 1 parts In-Stock

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1

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 450 parts In-Stock

1+ parts

$1.213

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450

$1.213

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Corohmni

South Africa . 288 parts In-Stock

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$1.841

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288

$1.841

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AZTECH Wire

Italy . 290 parts In-Stock

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$13.510

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290

$13.510

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Continental Prestige Electronics

USA . 3,128 parts In-Stock

1+ parts

$18.280

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$17.914

3,128

$18.280

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$17.914

Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$21.205

100+ parts

$19.508

1k+ parts

$18.280

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1,000

$21.205

$19.508

$18.280

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Ampacity Inc.

Singapore . 1 parts In-Stock

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$23.750

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$23.750

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Component Stockers USA

USA . 2 parts In-Stock

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$24.030

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$24.030

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Semicontronic

India . 1,313 parts In-Stock

1+ parts

$39.050

100+ parts

$38.074

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$37.878

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1,313

$39.050

$38.074

$37.878

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Microchip USA

USA . 123 parts In-Stock

1+ parts

$58.972

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Argo Parts USA

USA . 1,709 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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$17.914

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$17.366

10k+ parts

$17.000

500

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$17.914

$17.366

$17.000

iodParts Technologies Inc.

India . 150 parts In-Stock

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150

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXXX200N60C3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Additional Features:

AVALANCHE RATED

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

240 ns

Nominal Turn On Time (ton):

143 ns

Trade Compliance

IXXX200N60C3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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