Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 940 W; Maximum Collector Current (IC): 290 A; Maximum Collector-Emitter Voltage: 650 V; Maximum Operating Temperature: 175 Cel;
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Insulated Gate Bipolar Transistors (IGBT) IXXX160N65C4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Maximum Gate-Emitter Threshold Voltage:
Maximum Gate-Emitter Voltage:
JESD-609 Code:
Maximum Operating Temperature:
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Sub-Category:
Surface Mount:
Terminal Finish:
IXXX160N65C4 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.
ULN-2803A
Vishay Sprague
Vishay Sprague's ULN-2803A is an 8-bit peripheral driver with a max supply voltage of 3V. Featuring open-collector output characteristics, it offers built-in transient protections and operates b/w -20°C to 85°C. Ideal for applications requiring sink current flow direction, this rectangular-shaped driver has a terminal pitch of 2.54mm and turn-on/off time of 1us.
SMBJ18CA
International Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
1N4148
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
MBRS1100T3G
Onsemi
MBRS1100T3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.75V. It operates in temperatures ranging from -65 to 175°C, making it suitable for power applications. With a reverse test voltage of 100V, this diode is ideal for high-power circuits requiring efficient rectification.
1N4148WS
Rochester Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Vishay Intertechnology
Vishay Intertechnology's BAV99 diode features a max forward voltage of 1.3V and a max output current of 0.15A, making it ideal for rectification applications. With a small outline package style and dual terminal position, this series-connected diode is designed for surface mount usage in various electronic circuits with an operating temperature range from -55°C to 150°C.
Jiangsu Changjiang Electronics Technology
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): .715 V; Maximum Operating Temperature: 150 Cel; Maximum Reverse Recovery Time: .006 us; Maximum Output Current: .2 A;
Laube Technology
LM317T
Inchange Semiconductor
Other Regulators; No. of Terminals: 3; Surface Mount: NO; Technology: BIPOLAR; Minimum Output Voltage-1: 1.2 V; No. of Outputs: 1;
2N2222A
Bytesonic Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; No. of Elements: 1;
DS18B20Z
Maxim Integrated
DS18B20Z by Maxim Integrated is a 12-bit digital temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, with ±0.5°C accuracy. Suitable for applications requiring precise temperature monitoring in compact spaces.
LL4148GS08
Temic Semiconductors
LL4148GS08 by Temic Semiconductors is a glass diode with a max reverse recovery time of 0.008 us and max forward voltage of 1 V. It is a rectifier diode with a max output current of 0.15 A, ideal for applications requiring fast switching speeds and low power dissipation in electronic circuits.
NC7WZ07P6X
The Onsemi NC7WZ07P6X is a logic gate with 2 functions, featuring a propagation delay of 4.8 ns at 1.8V supply voltage. With open-drain output characteristics, it operates in industrial temperatures from -40 to 85°C. Ideal for applications requiring fast signal processing and low power consumption in compact designs.
Aeroflex/metelics
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Package Shape: ROUND; Transistor Application: SWITCHING;
LM555CN
Texas Instruments
LM555CN by Texas Instruments is an Analog Waveform Generation IC with a supply voltage range of 4.5V to 16V. It operates b/w 0°C to 70°C, making it suitable for commercial applications. This rectangular package IC has dual terminals and uses bipolar technology for pulse generation in various electronic circuits.
DS18B20U
Dallas Semiconductor
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Minimum Operating Temperature: -55 Cel; Package Equivalence Code: TSSOP8,.19;
NE555DR
NE555DR by Texas Instruments is an Analog Waveform Generation IC with 8 terminals, operating voltage of 5V, and power supplies ranging from 5-15V. It is a versatile component for pulse generation applications due to its small outline package and commercial temperature grade suitability.
2N7002
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; No. of Elements: 1; Transistor Application: SWITCHING;
Transpro Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb); Nominal Breakdown Voltage: 21.1 V; Maximum Clamping Voltage: 29.2 V;
1N4148WT
FS75R12KS4BOSA1
Infineon Technologies
Infineon FS75R12KS4BOSA1 is a N-CHANNEL IGBT with 6 elements in BRIDGE configuration. Features include 1200V max collector-emitter voltage, 100A max collector current, and 390ns turn off time. Ideal for high-power applications requiring fast switching such as motor drives and inverters.
IHW20N120R5XKSA1
IHW20N120R5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 30A. It has a nominal turn-off time of 685ns and a turn-on time of 92ns, making it suitable for high-power applications like motor drives and inverters. The package style is flange mount with through-hole terminals in a rectangular shape.
IRG4PC50WPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 55 A; JESD-30 Code: R-PSFM-T3;
IRG4PH50SPBF
IRG4PH50SPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 1200V and Max Collector Current of 57A. It has a Nominal Turn Off Time of 2170ns and Nominal Turn On Time of 62ns, making it suitable for POWER CONTROL applications. The transistor comes in a RECTANGULAR package style with THROUGH-HOLE terminals.
F3L150R07W2E3B11BOMA1
Infineon's F3L150R07W2E3B11BOMA1 IGBT features N-CHANNEL polarity, 650V VCEmax, and 150A IC. Ideal for power control applications with a max operating temp of 150°C. Complex configuration with 4 elements, 480ns toff, and 155ns ton for efficient power management.
APT75GP120J
Microchip Technology
APT75GP120J by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 128A. It has a nominal turn-off time of 359ns and turn-on time of 60ns, making it ideal for power control applications requiring fast switching speeds. The transistor comes in a rectangular package style with flange mount, suitable for high-power applications where efficient power management is crucial.
IXA60IF1200NA
Littelfuse
IXA60IF1200NA by Littelfuse is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 88A, and toff of 350ns. Ideal for POWER CONTROL applications due to its high power dissipation (290W), operating temperature range (-40 to 125°C), and collector-emitter voltage of 1200V.
NGTB15N120FLWG
NGTB15N120FLWG by Onsemi is an N-CHANNEL IGBT with 156W power dissipation, 1200V collector-emitter voltage, and 30A collector current. Ideal for high-power applications requiring efficient switching capabilities at up to 150°C operating temperature.
HGTG40N60B3
Harris Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 70 A; Package Shape: RECTANGULAR;
CM600DU-24NFH
Powerex
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 600 A; No. of Terminals: 7; Transistor Application: POWER CONTROL;
IXGT30N120B3D1
IXGT30N120B3D1 by Littelfuse is an N-CHANNEL IGBT with 1200V VCEsat, 30A IC, and 300W power dissipation. Ideal for power control applications, it features a single configuration with built-in diode and operates b/w -55 to 150 °C.
RGW80TS65CHRC11
ROHM
ROHM RGW80TS65CHRC11 is an N-CHANNEL IGBT with VCEsat of 1.9V and IC of 81A, ideal for POWER CONTROL applications. It has a max VCE of 650V and turn-off time of 185ns, suitable for high-power systems. The transistor operates b/w -40 to 175°C, making it versatile in various environments.
FZ250R65KE3NPSA1
Infineon's FZ250R65KE3NPSA1 IGBT offers 6500V VCE, 250A IC, and 4800W power dissipation. Ideal for high-power applications requiring efficient switching at up to 150°C operating temperature.
FF600R12ME4B11BPSA2
Insulated Gate Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
IXGH16N170A
The Littelfuse IXGH16N170A is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1700V and a max collector current of 16A. It has a nominal turn-off time of 330ns, making it ideal for motor control applications requiring high power dissipation up to 190W. The package style is flange mount with a rectangular shape and through-hole terminals.
IKW25T120FKSA1
IKW25T120FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 50A. It has a nominal turn-off time of 790ns and is designed for power control applications. The transistor comes in a rectangular package with through-hole terminals, making it suitable for high-power switching operations at temperatures up to 150°C.
APT85GR120B2
Microsemi
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 962 W; Maximum Collector Current (IC): 170 A; Terminal Position: SINGLE;
2ED300C17STROHSBPSA1
N-Channel; Moisture Sensitivity Level (MSL): 1; Maximum Operating Temperature: 85 Cel; Transistor Element Material: SILICON; Minimum Operating Temperature: -25 Cel;
SKM145GB066D
Semikron International
Semikron International's SKM145GB066D is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 1.9V and can handle up to 195A of Collector Current. Ideal for POWER CONTROL applications, this IGBT operates at a max temperature of 175°C with a fast Turn Off Time of 536ns.
STGB30V60DF
STMicroelectronics
STMicroelectronics' STGB30V60DF is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 60A max collector current. Ideal for power control applications, it features a built-in diode, 225ns turn-off time, and operates up to 175°C.
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IXXX200N65B4
IXYS Corporation
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 1150 W; Maximum Collector Current (IC): 370 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum Gate-Emitter Voltage: 20 V;
Littelfuse IXXX200N65B4 is an N-CHANNEL IGBT with 650V VCEsat, 480A IC, and 1.7V VGE. Ideal for POWER CONTROL applications due to its high power dissipation of 1630W and fast turn-off time of 370ns. The transistor operates b/w -55°C to 175°C temperature range in a RECTANGULAR package style.
IXXX160N65B4
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 940 W; Maximum Collector Current (IC): 310 A; Transistor Element Material: SILICON;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 940 W; Maximum Collector Current (IC): 310 A; Maximum Gate-Emitter Voltage: 20 V;
IXXX300N60B3
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2300 W; Maximum Collector Current (IC): 550 A; Maximum Collector-Emitter Voltage: 600 V;
The Littelfuse IXXX300N60B3 is an N-CHANNEL IGBT with 600V VCEsat, 550A IC, and 2300W power dissipation. Ideal for power control applications, it has a turn-off time of 430ns and operates b/w -55°C to 175°C.
IXXX110N65B4H1
Littelfuse IXXX110N65B4H1 is an N-CHANNEL IGBT with 650V VCEsat, 250A IC, and 880W power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 250ns. Operates b/w -55°C to 175°C temperature range.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 880 W; Maximum Collector Current (IC): 250 A; Nominal Turn On Time (ton): 65 ns;
IXXX160N65C4
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 940 W; Maximum Collector Current (IC): 290 A; Maximum Gate-Emitter Voltage: 20 V; Terminal Finish: Matte Tin (Sn);
IXXX300N60C3
IXXX300N60C3 by Littelfuse is an N-CHANNEL IGBT with 600V VCEsat, 510A IC, and 2300W power dissipation. Ideal for POWER CONTROL applications, it has a fast turn-off time of 278ns and operates b/w -55 to 175 °C temperatures.
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 2300 W; Maximum Collector Current (IC): 510 A; Terminal Finish: Matte Tin (Sn); Maximum Gate-Emitter Threshold Voltage: 5.5 V;
IXXX200N60C3
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1630 W; Maximum Collector Current (IC): 340 A; Case Connection: COLLECTOR;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1630 W; Maximum Collector Current (IC): 340 A; Terminal Finish: Matte Tin (Sn);
IXXX200N60B3
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1630 W; Maximum Collector Current (IC): 380 A; Maximum Collector-Emitter Voltage: 600 V;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1630 W; Maximum Collector Current (IC): 380 A; Maximum VCEsat: 1.7 V;
IXXX100N60B3H1
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 695 W; Maximum Collector Current (IC): 200 A; Maximum Collector-Emitter Voltage: 600 V; Terminal Finish: Matte Tin (Sn);
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 695 W; Maximum Collector Current (IC): 200 A; Transistor Element Material: SILICON;
IXXX100N60C3H1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 695 W; Maximum Collector Current (IC): 170 A; Package Style (Meter): IN-LINE;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 695 W; Maximum Collector Current (IC): 170 A; Maximum Gate-Emitter Voltage: 20 V;
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