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IXXX200N65B4

Littelfuse

IXXX200N65B4 by Littelfuse

Littelfuse IXXX200N65B4 is an N-CHANNEL IGBT with 650V VCEsat, 480A IC, and 1.7V VGE. Ideal for POWER CONTROL applications due to its high power dissipation of 1630W and fast turn-off time of 370ns. The transistor operates b/w -55°C to 175°C temperature range in a RECTANGULAR package style.

Median Price

$38.750

Lifecycle Status

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Farnell

UK . 35 parts In-Stock

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$20.540

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$15.960

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$15.640

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$20.540

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$15.640

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Newark

USA . 195 parts In-Stock

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$37.820

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$28.090

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$26.610

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195

$37.820

$28.090

$26.610

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DigiKey

USA . 1,421 parts In-Stock

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$38.750

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$26.014

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Mouser Electronics

USA . 295 parts In-Stock

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$38.750

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Element14

Singapore . 170 parts In-Stock

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$56.030

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$40.030

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Nova Conductors

Japan . 10 parts In-Stock

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$21.830

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Vyrian

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Corohmni

South Africa . 1 parts In-Stock

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$1.114

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Aztec Data Supply Inc.

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$1.440

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AZTECH Wire

Italy . 392 parts In-Stock

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$5.122

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Ampacity Inc.

Singapore . 35 parts In-Stock

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$17.460

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Semicontronic

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$16.936

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Aranea Global

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$21.393

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$20.538

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Continental Prestige Electronics

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$22.400

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$17.280

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Advanced Electronics

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$24.836

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$22.849

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$21.410

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Microchip USA

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Argo Parts USA

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Perfect Parts

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Overview

Discover the power and precision of the Littelfuse IXXX200N65B4 Insulated Gate Bipolar Transistor. With a maximum VCEsat of 1.7V and a maximum operating temperature of 175°C, this N-channel transistor is ideal for power control applications. The quality craftsmanship of Littelfuse ensures reliability and longevity, while the high power dissipation of 1630W guarantees optimal performance. Experience seamless power management and efficient operation with the IXXX200N65B4 - your go-to choice for superior electronic solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the IGBT.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower on-state resistance and higher current-carrying capabilities, making them suitable for power control applications.

Configuration: SINGLE

Simplifies the circuit design and allows for easy integration into power control systems.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring reliable and efficient performance.

Maximum VCEsat: 1.7 V

Low VCEsat value reduces power dissipation and improves efficiency in power control applications.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy mounting and heatsink attachment for effective thermal management.

Nominal Turn Off Time (toff): 370 ns

Fast turn-off time enhances switching speed and reduces power loss during switching transitions.

Maximum Power Dissipation (Abs): 1630 W

High power dissipation capability allows the IGBT to handle large amounts of power without overheating.

Maximum Operating Temperature: 175 °C

Wide operating temperature range ensures reliable performance in various environmental conditions.

Maximum Collector-Emitter Voltage: 650 V

High collector-emitter voltage rating makes the IGBT suitable for high-voltage power control applications.

Maximum Gate-Emitter Voltage: 20 V

Sufficient gate-emitter voltage rating for effective control of the IGBT's switching operation.

Maximum Collector Current (IC): 480 A

High collector current rating enables the IGBT to handle large amounts of current in power control applications.

Maximum Gate-Emitter Threshold Voltage: 6.5 V

Appropriate gate-emitter threshold voltage for reliable turn-on and turn-off operation of the IGBT.

Terminal Finish: Matte Tin (Sn)

Matte tin finish provides good solderability and corrosion resistance for reliable electrical connections.

Nominal Turn On Time (ton): 135 ns

Fast turn-on time enhances switching speed and overall performance of the IGBT in power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXXX200N65B4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

370 ns

Nominal Turn On Time (ton):

135 ns

Maximum VCEsat:

1.7 V

Trade Compliance

IXXX200N65B4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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