Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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FP35R12KT4B15BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.15V and a max power dissipation of 210W. It is commonly used for power control applications due to its high voltage rating (1200V) and fast turn on/off times (210ns/620ns).
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Assy Fe
N-CHANNEL - This product's N-channel polarity allows for efficient power control, making it a good choice for applications requiring precise power management.
COMPLEX - With its complex configuration, this IGBT is capable of handling a wide range of power control requirements effectively, making it a versatile choice for various applications.
POWER CONTROL - Designed specifically for power control applications, this IGBT ensures accurate and reliable power management, making it an excellent choice for high-performance power control systems.
2.15 V - The low VCEsat of this IGBT reduces power losses and improves overall efficiency, making it an advantageous choice for energy-conscious applications.
RECTANGULAR - The rectangular package shape of this IGBT allows for easy integration and space-saving installation, making it a convenient choice for compact designs.
7 - With its seven elements, this IGBT provides enhanced power handling capabilities, making it suitable for high-power applications that require robust performance.
620 ns - The fast turn-off time of this IGBT allows for quick and precise power control, making it an ideal choice for applications that require rapid switching and precise timing.
24 - With its extensive number of terminals, this IGBT offers flexible connection options, making it a versatile choice for various circuit configurations.
210 W - The high maximum power dissipation capability of this IGBT allows for efficient heat management, ensuring reliable and stable operation even under demanding conditions.
FLANGE MOUNT - The flange mount package style of this IGBT simplifies installation and improves thermal conductivity, making it an excellent choice for applications that require easy mounting and effective heat dissipation.
150 °C - The high maximum operating temperature of this IGBT ensures reliable performance even in demanding environments, making it suitable for applications that require extended operating ranges.
1200 V - The high maximum collector-emitter voltage rating of this IGBT enables it to handle high-voltage applications reliably, making it a durable choice for high-power systems.
SILICON - Made from high-quality silicon, this IGBT delivers excellent performance and reliability, making it a preferred choice for demanding applications that require precise power control.
20 V - The high maximum gate-emitter voltage rating of this IGBT allows for efficient gate control, ensuring stable and accurate power regulation, making it suitable for applications that require precise voltage control.
40 °C - The low minimum operating temperature of this IGBT ensures reliable performance even in extremely cold environments, making it a reliable choice for applications that operate in sub-zero conditions.
6.4 V - The high maximum gate-emitter threshold voltage of this IGBT allows for precise control over the switching characteristics, making it suitable for applications that require accurate power regulation with minimal switching losses.
UPPER - The upper terminal position of this IGBT simplifies the connection process, making it easier to integrate into existing circuit designs, making it a convenient choice for various applications.
ISOLATED - The isolated case connection of this IGBT improves safety and prevents accidental short circuits, making it a reliable choice for applications that require enhanced protection and durability.
210 ns - The fast turn-on time of this IGBT ensures quick response and precise power control, making it suitable for applications that require rapid switching and accurate timing.
UL APPROVED - This IGBT has met the rigorous standards set by UL, ensuring its compliance with safety and performance requirements, making it a reliable and trusted choice for various applications.
Insulated Gate Bipolar Transistors (IGBT) FP35R12KT4B15BOSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies
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FP35R12KT4B15BOSA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
LL4148
Panjit International
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM317T
Fairchild Semiconductor
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Maximum Output Current-1: 1.5 A; No. of Outputs: 1; Qualification Status: Not Qualified;
Rectron
1N4148
Excel (Suzhou) Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM317TG
Onsemi
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Minimum Input-Output Voltage Differential: 3 V; Qualification Status: Not Qualified; No. of Functions: 1;
AMS1117-3.3
Advanced Monolithic Systems
AMS1117-3.3 by Advanced Monolithic Systems is a fixed positive single output LDO regulator with 1A max output current, 3% voltage tolerance, and 1.3V dropout voltage. Ideal for applications requiring stable 3.3V supply in compact designs due to its small outline package and excellent load regulation of 0.025%.
MMBT2907ALT1G
MMBT2907ALT1G by Onsemi is a PNP BJT transistor with 100 min hFE, 60V VCEO, and 200MHz fT. Ideal for switching applications, it has a small outline package with Gull Wing terminals and can handle up to 0.6A of collector current.
MMBT3906LT1G
MMBT3906LT1G by Onsemi is a PNP BJT with VCEsat of 0.4V, hFE of 30, and fT of 250MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact SOT-23 package. Suitable for use in temperature-sensitive environments with an operating range from -65°C to 150°C.
Central Semiconductor
SN65HVD234DR
Texas Instruments
SN65HVD234DR by Texas Instruments is an 8-terminal interface circuit with a data rate of 1 Mbps. Operating temperature ranges from -40 to 125 °C, making it ideal for automotive applications. With a supply voltage of 3.3 V and low current draw of 6 mA, it's suitable for network interfaces in compact designs.
NC7WZ17P6X
BUFFER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 6; Package Code: TSSOP; Package Shape: RECTANGULAR;
SMBJ18CA
International Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
DS18B20
Maxim Integrated
DS18B20 by Maxim Integrated is a 12-bit digital temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, with ±0.5°C accuracy. Commonly used in applications requiring precise temperature monitoring like HVAC systems and industrial automation.
Yangzhou Yangjie Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.05 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
NDT2955
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (Abs) (ID): 2.5 A;
BAV99
STMicroelectronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
MBR0540T1G
MBR0540T1G by Onsemi is a Schottky rectifier diode with max. forward voltage of 0.62V and max. output current of 0.5A, ideal for applications requiring high efficiency power conversion in small outline packages. Operating temp range: -55 to 150°C, with peak reflow temp at 260°C, making it suitable for various electronic devices needing reliable rectification performance in compact designs.
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
New Jersey Semiconductor Products
CR0805-FX-10R0ELF
Bourns
Bourns CR0805-FX-10R0ELF is a SMT fixed resistor with 10 ohm resistance, 1% tolerance, and 0.125 W power dissipation. Ideal for applications requiring a temperature range of -55 to 155 °C, such as automotive electronics and industrial control systems.
APT200GN60JDQ4
Advanced Power Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 283 A; Nominal Turn Off Time (toff): 660 ns; JESD-30 Code: R-PUFM-X4;
APT50GP60J
Microsemi
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Case Connection: ISOLATED; Transistor Element Material: SILICON;
APT45GP120J
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 329 W; Maximum Collector Current (IC): 75 A; Case Connection: ISOLATED;
FF450R12ME4EB11BPSA1
Infineon Technologies
FF450R12ME4EB11BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a 740 ns turn off time, and 1200V max collector-emitter voltage. It is used in applications requiring high power switching such as industrial motor drives and renewable energy systems.
IRG4BC20UD-STRL
International Rectifier
IRG4BC20UD-STRL by International Rectifier is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 20V. It has a nominal turn-off time of 320ns, making it suitable for power control applications requiring fast switching speeds. This IGBT comes in a small outline package with gull wing terminals for surface mount assembly.
CM500HA-34A
Powerex
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 500 A; Case Connection: ISOLATED; Terminal Position: UPPER;
FS150R12KT4PBPSA1
Infineon FS150R12KT4PBPSA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V and turn off time of 605ns. Ideal for applications requiring high power efficiency in industrial systems operating up to 150°C.
IKW25T120FKSA1
IKW25T120FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 50A. It has a nominal turn-off time of 790ns and is designed for power control applications. The transistor comes in a rectangular package with through-hole terminals, making it suitable for high-power switching operations at temperatures up to 150°C.
IRG4PC40UDPBF
IRG4PC40UDPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 40A. It has a nominal turn-off time of 330ns, making it ideal for power control applications requiring fast switching speeds. The package style is flange mount with a max power dissipation of 160W, suitable for high-power electronic systems.
IXGR32N170H1
Littelfuse
IXGR32N170H1 by Littelfuse is an N-CHANNEL IGBT with 1700V VCE, 38A IC, and 200W Ptot. Ideal for power control applications, it features a single configuration with built-in diode and operates up to 150°C.
ISL9V3040D3STV
ISL9V3040D3STV by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.65 V and a max IC of 21 A. Ideal for automotive ignition applications, it features a built-in diode and resistor, operates at temperatures ranging from -55 to 175 °C, and has a peak reflow temperature of 260 C.
APTGT75A60T1G
Microchip Technology
APTGT75A60T1G by Microchip Technology is an N-CHANNEL IGBT transistor with 2 SERIES CONNECTED elements. It has a Max VCEsat of 1.9V and is ideal for MOTOR CONTROL applications. With a Max Collector Current of 100A and Max Power Dissipation of 250W, it offers efficient performance in RECTANGULAR package style.
FS150R12KT4B11BOSA1
FS150R12KT4B11BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max collector-emitter voltage of 1200V and a nominal turn-off time of 605ns. This power control transistor is designed for applications requiring fast switching speeds in bridge configurations.
AFGY100T65SPD
AFGY100T65SPD by Onsemi is an N-CHANNEL IGBT with 650V VCEsat and 120A IC, ideal for POWER CONTROL applications. It features a max power dissipation of 882W, operating temperature range of -55 to 175°C, and built-in diode configuration.
STGY50NC60WD
STGY50NC60WD by STMicroelectronics is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 20V. It is used for power control applications, with a nominal turn off time of 271ns and a max power dissipation of 260W.
FGH30S130P
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 500 W; Maximum Collector Current (IC): 60 A; Case Connection: COLLECTOR;
FS25R12YT3
Eupec & Kg
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Nominal Turn On Time (ton): 120 ns; Qualification: Not Qualified;
IKW30N60DTPXKSA1
IKW30N60DTPXKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 1.8V, IC of 53A, and Pmax of 200W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 279ns and high operating temperature range (-40 to 175°C).
IXXX200N60B3
Littelfuse IXXX200N60B3 is an N-CHANNEL IGBT with 600V VCEsat, 380A IC, and 1.7V VCE. Ideal for POWER CONTROL applications due to its high power dissipation of 1630W and fast switching times (ton:140ns, toff:395ns). Suitable for various industrial uses requiring efficient power management in a single configuration package.
BSM50GP120
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 360 W; Maximum Collector Current (IC): 80 A; No. of Terminals: 35;
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FP35R12KT4BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; JESD-30 Code: R-XUFM-X23; Terminal Position: UPPER; Nominal Turn On Time (ton): 210 ns;
FP35R12W2T4BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 54 A; Package Style (Meter): FLANGE MOUNT; Transistor Application: POWER CONTROL;
FP35R12KT4B11BPSA1
Insulated Gate Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
FP35R12KT4PBPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector-Emitter Voltage: 1200 V; JESD-30 Code: R-XUFM-X23; No. of Terminals: 23;
FP35R12W2T4_B11
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 215 W; Maximum Collector Current (IC): 54 A; Maximum Gate-Emitter Voltage: 20 V;
FP35R12W2T4B11BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 54 A; Package Body Material: UNSPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
FP35R12W2T4P
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Nominal Turn Off Time (toff): 510 ns; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
FP35R12KT4
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 210 W; Maximum Collector Current (IC): 35 A; Case Connection: ISOLATED;
FP35R12N2T7
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 35 A; Reference Standard: IEC-60747; IEC-60749; IEC-60068; IEC-61140; Transistor Application: POWER CONTROL;
FP35R12KT4-B15
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 210 W; Maximum Collector Current (IC): 130 A; Moisture Sensitivity Level (MSL): 1;
FP35R12N2T7_B11
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 35 A; Package Shape: RECTANGULAR; Additional Features: UL RECOGNIZED;
FP35R12W2T4
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 215 W; Maximum Collector Current (IC): 54 A; Package Body Material: UNSPECIFIED;
FP35R12KT4B15BPSA1
Insulated Gate Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
FP35R12KT4B11BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 210 W; Maximum Collector-Emitter Voltage: 1200 V; Package Style (Meter): FLANGE MOUNT;
FP35R12KT4P
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Package Shape: RECTANGULAR; Maximum VCEsat: 2.15 V; Terminal Position: UPPER;
FP35R12KS4CG
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Maximum Collector Current (IC): 40 A; Package Style (Meter): FLANGE MOUNT;
FP35R12KT4_B11
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 210 W; Maximum Collector Current (IC): 35 A; Package Body Material: UNSPECIFIED;
FP35R12U1T4
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 54 A; Transistor Element Material: SILICON;
FP35R12U1T4BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 54 A; Transistor Element Material: SILICON; No. of Elements: 7;
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