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FP35R12KT4B15BOSA1

Infineon Technologies

FP35R12KT4B15BOSA1 by Infineon Technologies

FP35R12KT4B15BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.15V and a max power dissipation of 210W. It is commonly used for power control applications due to its high voltage rating (1200V) and fast turn on/off times (210ns/620ns).

Median Price

$71.336

Lifecycle Status

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5

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1k+

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Rochester

USA . 152 parts In-Stock

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-

100+ parts

$63.410

1k+ parts

$56.740

10k+ parts

$53.400

152

-

$63.410

$56.740

$53.400

Verical

USA . 149 parts In-Stock

1+ parts

-

100+ parts

$79.263

1k+ parts

$70.925

10k+ parts

$66.750

149

-

$79.263

$70.925

$66.750

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Digiode

USA . 911 parts In-Stock

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$67.108

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911

$67.108

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Nova Conductors

Japan . 450 parts In-Stock

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$95.884

100+ parts

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450

$95.884

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Vyrian

USA . 2,765 parts In-Stock

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2,765

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Corohmni

South Africa . 66 parts In-Stock

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$0.738

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66

$0.738

-

-

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Modulus Dynamics

Lithuania . 23,133 parts In-Stock

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$1.183

100+ parts

$1.136

1k+ parts

$1.088

10k+ parts

-

23,133

$1.183

$1.136

$1.088

-

Aztec Data Supply Inc.

USA . 3,135 parts In-Stock

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$1.950

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3,135

$1.950

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AZTECH Wire

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$18.835

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681

$18.835

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Ampacity Inc.

Singapore . 151 parts In-Stock

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$60.040

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151

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$60.040

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$58.539

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$58.239

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$58.239

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Corphita

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$63.576

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Continental Prestige Electronics

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$95.884

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$93.966

3,817

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$93.966

Microchip USA

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$141.565

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$141.565

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Argo Parts USA

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1,741

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Netroflash

USA . 1,000 parts In-Stock

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$93.966

1k+ parts

$91.090

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$89.172

1,000

-

$93.966

$91.090

$89.172

Assy Fe

Spain . 1,000 parts In-Stock

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1,000

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Overview

Discover the power of the FP35R12KT4B15BOSA1 by Infineon Technologies, a high-quality Insulated Gate Bipolar Transistor (IGBT) designed for optimal power control applications. With its N-CHANNEL polarity and complex configuration, this transistor offers unparalleled performance and reliability. Whether you're in the automotive, industrial, or renewable energy sector, this product's 1200V maximum collector-emitter voltage and 210W maximum power dissipation ensure efficient and effective power management. Trust Infineon Technologies to deliver cutting-edge technology that exceeds expectations. Upgrade your power control systems with the FP35R12KT4B15BOSA1 and experience the advantages it brings.

Feature Benefit Bullets

Polarity or Channel Type:

N-CHANNEL - This product's N-channel polarity allows for efficient power control, making it a good choice for applications requiring precise power management.

Configuration:

COMPLEX - With its complex configuration, this IGBT is capable of handling a wide range of power control requirements effectively, making it a versatile choice for various applications.

Transistor Application:

POWER CONTROL - Designed specifically for power control applications, this IGBT ensures accurate and reliable power management, making it an excellent choice for high-performance power control systems.

Maximum VCEsat:

2.15 V - The low VCEsat of this IGBT reduces power losses and improves overall efficiency, making it an advantageous choice for energy-conscious applications.

Package Shape:

RECTANGULAR - The rectangular package shape of this IGBT allows for easy integration and space-saving installation, making it a convenient choice for compact designs.

No. of Elements:

7 - With its seven elements, this IGBT provides enhanced power handling capabilities, making it suitable for high-power applications that require robust performance.

Nominal Turn Off Time (toff):

620 ns - The fast turn-off time of this IGBT allows for quick and precise power control, making it an ideal choice for applications that require rapid switching and precise timing.

No. of Terminals:

24 - With its extensive number of terminals, this IGBT offers flexible connection options, making it a versatile choice for various circuit configurations.

Maximum Power Dissipation (Abs):

210 W - The high maximum power dissipation capability of this IGBT allows for efficient heat management, ensuring reliable and stable operation even under demanding conditions.

Package Style (Meter):

FLANGE MOUNT - The flange mount package style of this IGBT simplifies installation and improves thermal conductivity, making it an excellent choice for applications that require easy mounting and effective heat dissipation.

Maximum Operating Temperature:

150 °C - The high maximum operating temperature of this IGBT ensures reliable performance even in demanding environments, making it suitable for applications that require extended operating ranges.

Maximum Collector-Emitter Voltage:

1200 V - The high maximum collector-emitter voltage rating of this IGBT enables it to handle high-voltage applications reliably, making it a durable choice for high-power systems.

Transistor Element Material:

SILICON - Made from high-quality silicon, this IGBT delivers excellent performance and reliability, making it a preferred choice for demanding applications that require precise power control.

Maximum Gate-Emitter Voltage:

20 V - The high maximum gate-emitter voltage rating of this IGBT allows for efficient gate control, ensuring stable and accurate power regulation, making it suitable for applications that require precise voltage control.

Minimum Operating Temperature:

40 °C - The low minimum operating temperature of this IGBT ensures reliable performance even in extremely cold environments, making it a reliable choice for applications that operate in sub-zero conditions.

Maximum Gate-Emitter Threshold Voltage:

6.4 V - The high maximum gate-emitter threshold voltage of this IGBT allows for precise control over the switching characteristics, making it suitable for applications that require accurate power regulation with minimal switching losses.

Terminal Position:

UPPER - The upper terminal position of this IGBT simplifies the connection process, making it easier to integrate into existing circuit designs, making it a convenient choice for various applications.

Case Connection:

ISOLATED - The isolated case connection of this IGBT improves safety and prevents accidental short circuits, making it a reliable choice for applications that require enhanced protection and durability.

Nominal Turn On Time (ton):

210 ns - The fast turn-on time of this IGBT ensures quick response and precise power control, making it suitable for applications that require rapid switching and accurate timing.

Reference Standard:

UL APPROVED - This IGBT has met the rigorous standards set by UL, ensuring its compliance with safety and performance requirements, making it a reliable and trusted choice for various applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FP35R12KT4B15BOSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

ISOLATED

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6.4 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X24

No. of Elements:

7

No. of Terminals:

24

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

UL APPROVED

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

620 ns

Nominal Turn On Time (ton):

210 ns

Maximum VCEsat:

2.15 V

Trade Compliance

FP35R12KT4B15BOSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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