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IGW60T120FKSA1

Infineon Technologies

IGW60T120FKSA1 by Infineon Technologies

Infineon's IGW60T120FKSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 100A max collector current. Ideal for power control applications, it features a single configuration with built-in diode and 730ns turn-off time. The package is rectangular in shape with through-hole terminals.

Median Price

$4.801

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

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Chip1Stop

Japan . 3 parts In-Stock

1+ parts

$3.740

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-

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3

$3.740

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Arrow

USA . 19 parts In-Stock

1+ parts

$4.557

100+ parts

$4.005

1k+ parts

$3.879

10k+ parts

-

19

$4.557

$4.005

$3.879

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Distrelec

Netherlands . 29 parts In-Stock

1+ parts

$7.116

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-

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29

$7.116

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Mouser Electronics

USA . 534 parts In-Stock

1+ parts

$7.720

100+ parts

$6.340

1k+ parts

$4.910

10k+ parts

$4.890

534

$7.720

$6.340

$4.910

$4.890

Element14

Singapore . 20 parts In-Stock

1+ parts

$7.738

100+ parts

$4.873

1k+ parts

$4.605

10k+ parts

-

20

$7.738

$4.873

$4.605

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Rochester

USA . 44,964 parts In-Stock

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-

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$3.780

1k+ parts

$3.380

10k+ parts

$3.180

44,964

-

$3.780

$3.380

$3.180

Verical

USA . 44,538 parts In-Stock

1+ parts

-

100+ parts

$4.725

1k+ parts

$4.225

10k+ parts

$3.975

44,538

-

$4.725

$4.225

$3.975

Farnell

UK . 43,435 parts In-Stock

1+ parts

-

100+ parts

$4.877

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43,435

-

$4.877

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 494 parts In-Stock

1+ parts

$3.430

100+ parts

-

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494

$3.430

-

-

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Nova Conductors

Japan . 600 parts In-Stock

1+ parts

$5.431

100+ parts

-

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600

$5.431

-

-

-

Schukat

Germany . 4 parts In-Stock

1+ parts

$5.720

100+ parts

$4.000

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-

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4

$5.720

$4.000

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Vyrian

USA . 3,076 parts In-Stock

1+ parts

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3,076

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Rutronik

Germany . 510 parts In-Stock

1+ parts

-

100+ parts

$4.350

1k+ parts

$3.830

10k+ parts

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510

-

$4.350

$3.830

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Sensible Micro Corp

USA . 240 parts In-Stock

1+ parts

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240

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TME

Poland . 180 parts In-Stock

1+ parts

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100+ parts

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$4.040

10k+ parts

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180

-

-

$4.040

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Partservice

France . 60 parts In-Stock

1+ parts

-

100+ parts

$5.550

1k+ parts

$5.550

10k+ parts

$5.550

60

-

$5.550

$5.550

$5.550

Micros sp.j. W. Kędra i J. Lic

Poland . 40 parts In-Stock

1+ parts

-

100+ parts

$5.945

1k+ parts

$5.945

10k+ parts

$5.945

40

-

$5.945

$5.945

$5.945

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 1,009 parts In-Stock

1+ parts

$0.745

100+ parts

-

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1,009

$0.745

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Aztec Data Supply Inc.

USA . 321 parts In-Stock

1+ parts

$0.856

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321

$0.856

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Modulus Dynamics

Lithuania . 10,217 parts In-Stock

1+ parts

$1.176

100+ parts

$1.129

1k+ parts

$1.082

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-

10,217

$1.176

$1.129

$1.082

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Semicontronic

India . 17,240 parts In-Stock

1+ parts

$3.000

100+ parts

$2.925

1k+ parts

$2.910

10k+ parts

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17,240

$3.000

$2.925

$2.910

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Ampacity Inc.

Singapore . 11,173 parts In-Stock

1+ parts

$3.180

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$3.180

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Corphita

USA . 205 parts In-Stock

1+ parts

$3.249

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205

$3.249

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Continental Prestige Electronics

USA . 24 parts In-Stock

1+ parts

$7.420

100+ parts

$4.890

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24

$7.420

$4.890

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Microchip USA

USA . 402 parts In-Stock

1+ parts

$23.968

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402

$23.968

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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3,500

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Argo Parts USA

USA . 3,398 parts In-Stock

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3,398

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Perfect Parts

USA . 794 parts In-Stock

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794

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iodParts Technologies Inc.

India . 242 parts In-Stock

1+ parts

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$5.274

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242

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$5.274

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GreenTree Electronics

Israel . 208 parts In-Stock

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208

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Overview

Unleash the power of the Infineon Technologies IGW60T120FKSA1 Insulated Gate Bipolar Transistor (IGBT) for your power control applications. With a maximum collector-emitter voltage of 1200V and a maximum collector current of 100A, this N-CHANNEL transistor offers unparalleled performance and reliability. Its single configuration with built-in diode makes it easy to use, while the flange mount package style ensures seamless integration. Trust in Infineon Technologies' expertise to deliver cutting-edge technology that meets your needs. Elevate your power control systems with the IGW60T120FKSA1 and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the internal components of the transistor, making it suitable for various industrial applications.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower on-state voltage drop and higher switching speeds than P-channel IGBTs, making them more efficient for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easier circuit design and protection against reverse voltage, enhancing the reliability of the IGBT.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT is optimized for efficient switching and handling high currents.

Maximum Collector-Emitter Voltage: 1200 V

With a high voltage rating, this IGBT can handle large power loads and is suitable for high voltage applications.

Maximum Collector Current (IC): 100 A

Capable of handling high current levels, this IGBT is ideal for power control applications that require a robust and reliable transistor.

Nominal Turn Off Time (toff): 730 ns

The fast turn-off time helps prevent power loss and improve efficiency in switching applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IGW60T120FKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

730 ns

Nominal Turn On Time (ton):

95 ns

Trade Compliance

IGW60T120FKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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