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SGL160N60UFDTU

Onsemi

SGL160N60UFDTU by Onsemi

SGL160N60UFDTU by Onsemi is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 160A max collector current. Ideal for motor control applications, it features a single configuration with built-in diode and a nominal turn-off time of 262ns.

Median Price

$5.037

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 746 parts In-Stock

1+ parts

$9.320

100+ parts

-

1k+ parts

$6.073

10k+ parts

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746

$9.320

-

$6.073

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Rochester

USA . 62,277 parts In-Stock

1+ parts

-

100+ parts

$4.030

1k+ parts

$3.600

10k+ parts

$3.390

62,277

-

$4.030

$3.600

$3.390

Verical

USA . 48,943 parts In-Stock

1+ parts

-

100+ parts

$5.037

1k+ parts

$4.500

10k+ parts

$4.237

48,943

-

$5.037

$4.500

$4.237

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 995 parts In-Stock

1+ parts

$4.684

100+ parts

-

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995

$4.684

-

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Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$5.786

100+ parts

-

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150

$5.786

-

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TME

Poland . 17 parts In-Stock

1+ parts

$8.690

100+ parts

$5.400

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-

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17

$8.690

$5.400

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Chip Stock

USA . 15,500 parts In-Stock

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15,500

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ComSIT Distribution GmbH

Germany . 300 parts In-Stock

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300

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ComSIT USA

USA . 200 parts In-Stock

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200

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Cyclops Electronics Ltd

UK . 103 parts In-Stock

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103

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Vyrian

USA . 20 parts In-Stock

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20

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 3,306 parts In-Stock

1+ parts

$0.510

100+ parts

-

1k+ parts

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10k+ parts

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3,306

$0.510

-

-

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Ampacity Inc.

Singapore . 137 parts In-Stock

1+ parts

$4.190

100+ parts

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137

$4.190

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-

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Semicontronic

India . 137 parts In-Stock

1+ parts

$4.190

100+ parts

$4.085

1k+ parts

$4.064

10k+ parts

-

137

$4.190

$4.085

$4.064

-

Corphita

USA . 2,087 parts In-Stock

1+ parts

$4.437

100+ parts

-

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2,087

$4.437

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Corohmni

South Africa . 311 parts In-Stock

1+ parts

$4.930

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311

$4.930

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$5.670

100+ parts

-

1k+ parts

$5.443

10k+ parts

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2,000

$5.670

-

$5.443

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Continental Prestige Electronics

USA . 175 parts In-Stock

1+ parts

$5.786

100+ parts

-

1k+ parts

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10k+ parts

$5.670

175

$5.786

-

-

$5.670

Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$7.064

100+ parts

$6.499

1k+ parts

$6.090

10k+ parts

-

500

$7.064

$6.499

$6.090

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Perfect Parts

USA . 45,216 parts In-Stock

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45,216

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Lixinc

USA . 14,007 parts In-Stock

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14,007

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Kepictronics

USA . 12,000 parts In-Stock

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RC Electronics

USA . 9,874 parts In-Stock

1+ parts

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$5.410

1k+ parts

$4.940

10k+ parts

$4.790

9,874

-

$5.410

$4.940

$4.790

TANS Electronics

Latvia . 7,686 parts In-Stock

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7,686

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Problanco Electronics

Mexico . 2,628 parts In-Stock

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2,628

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Argo Parts USA

USA . 2,457 parts In-Stock

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Microchip USA

USA . 2,419 parts In-Stock

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2,419

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Kulean Microsystems

USA . 1,782 parts In-Stock

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1,782

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Supply Digital

USA . 1,627 parts In-Stock

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1,627

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iodParts Technologies Inc.

India . 870 parts In-Stock

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$19.697

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870

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$19.697

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UHIMA Technologies

Türkiye . 485 parts In-Stock

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485

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SupplyDigital Components

Austria . 246 parts In-Stock

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246

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Assy Fe

Spain . 5 parts In-Stock

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5

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Overview

Enhance the performance of your motor control applications with the SGL160N60UFDTU by Onsemi. Crafted with precision by a trusted manufacturer, this N-CHANNEL Insulated Gate Bipolar Transistor offers unparalleled quality and reliability. With a single configuration and built-in diode, this transistor ensures seamless operation while maintaining high efficiency. Say goodbye to downtime and hello to enhanced productivity with this versatile component. Upgrade your systems today and experience the difference that Onsemi's cutting-edge technology can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material choice makes the product lightweight and durable, ideal for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs offer lower conduction losses, making them more efficient for motor control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and saves space on the PCB.

Transistor Application: MOTOR CONTROL

Specifically designed for motor control applications, ensuring optimal performance and reliability.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration into existing systems or circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and reliable connection for industrial applications.

Nominal Turn Off Time (toff): 262 ns

The fast turn-off time increases efficiency and reduces heat generation during operation.

No. of Terminals: 3

The simple 3-terminal design simplifies the installation process and reduces chances of error.

Package Style (Meter): FLANGE MOUNT

The flange mount design allows for easy mounting and heat dissipation in industrial applications.

Maximum Operating Temperature: 150 °C

With a high operating temperature, this product can withstand harsh environments and ensure long-term reliability.

Maximum Collector-Emitter Voltage: 600 V

The high voltage rating makes this IGBT suitable for high-power applications.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material known for its reliability and efficiency.

Maximum Collector Current (IC): 160 A

With a high collector current rating, this IGBT can handle high-power loads with ease.

Terminal Finish: MATTE TIN

The matte tin finish ensures a reliable connection and prevents corrosion over time.

Terminal Position: SINGLE

The single terminal position simplifies the wiring process and reduces the risk of short circuits.

Nominal Turn On Time (ton): 150 ns

The fast turn-on time ensures quick response in motor control applications, improving overall performance.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) SGL160N60UFDTU attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Additional Features:

LOW CONDUCTION LOSS, HIGH SPEED SWITCHING

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

262 ns

Nominal Turn On Time (ton):

150 ns

Trade Compliance

SGL160N60UFDTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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