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SGL160N60UFD

Onsemi

SGL160N60UFD by Onsemi

SGL160N60UFD by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.6V and IC of 160A, ideal for MOTOR CONTROL applications. It has a TOFF of 262ns, TON of 150ns, and can operate at temperatures ranging from -55 to 150°C.

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Chip Stock

USA . 3,397 parts In-Stock

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Digiode

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PC Components Company LLC

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Bristol Electronics

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Nova Conductors

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Andel Nordic

Denmark . 2,166 parts In-Stock

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Ampacity Inc.

Singapore . 537 parts In-Stock

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SupplyDigital Components

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TANS Electronics

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Argo Parts USA

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Continental Prestige Electronics

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Problanco Electronics

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UHIMA Technologies

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Lixinc

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Overview

Upgrade your motor control systems with the SGL160N60UFD by Onsemi. Known for their high-quality components, Onsemi delivers reliable insulated gate bipolar transistors (IGBT) that offer exceptional performance and durability. This N-CHANNEL transistor features a built-in diode, making it perfect for applications requiring efficient power management. With a maximum collector-emitter voltage of 600V and a maximum collector current of 160A, this transistor ensures optimal functionality even in demanding environments. Trust Onsemi to provide cutting-edge technology that exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs are known for their high efficiency and fast switching speeds, making them ideal for motor control applications.

Transistor Application: MOTOR CONTROL

Specifically designed for motor control applications, indicating high performance in this particular area.

Maximum VCEsat: 2.6 V

Low VCEsat helps in reducing power losses and increasing overall efficiency of the product.

Maximum Power Dissipation (Abs): 250 W

Can handle high power dissipation, making it suitable for applications requiring high power output.

Maximum Collector-Emitter Voltage: 600 V

Can withstand high voltage levels, providing protection against voltage spikes in the circuit.

Maximum Gate-Emitter Voltage: 20 V

Allows for precise control over switching operations and protects the transistor from excessive gate-emitter voltage.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) SGL160N60UFD attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Additional Features:

LOW CONDUCTION LOSS

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Fall Time (tf):

250 ns

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-264

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

450 ns

Nominal Turn Off Time (toff):

262 ns

Nominal Turn On Time (ton):

150 ns

Maximum VCEsat:

2.6 V

Trade Compliance

SGL160N60UFD Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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