Loading...

FB30R06W1E3_B1

Infineon Technologies

FB30R06W1E3_B1 by Infineon Technologies

FB30R06W1E3_B1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements and a max VCEsat of 2V. It is designed for power control applications, offering a nominal turn off time of 245ns and a max collector-emitter voltage of 600V. With a package style of FLANGE MOUNT, it can handle up to 115W power dissipation at a max operating temperature of 175°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 712 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

712

-

-

-

-

Digiode

USA . 456 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

456

-

-

-

-

Nova Conductors

Japan . 24 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

24

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 23 parts In-Stock

1+ parts

$0.551

100+ parts

-

1k+ parts

-

10k+ parts

-

23

$0.551

-

-

-

Modulus Dynamics

Lithuania . 22,744 parts In-Stock

1+ parts

$0.744

100+ parts

$0.714

1k+ parts

$0.684

10k+ parts

-

22,744

$0.744

$0.714

$0.684

-

Aztec Data Supply Inc.

USA . 4,685 parts In-Stock

1+ parts

$1.890

100+ parts

-

1k+ parts

-

10k+ parts

-

4,685

$1.890

-

-

-

AZTECH Wire

Italy . 190 parts In-Stock

1+ parts

$6.210

100+ parts

-

1k+ parts

-

10k+ parts

-

190

$6.210

-

-

-

Semicontronic

India . 717 parts In-Stock

1+ parts

$9.050

100+ parts

$8.824

1k+ parts

$8.778

10k+ parts

-

717

$9.050

$8.824

$8.778

-

Ampacity Inc.

Singapore . 1,141 parts In-Stock

1+ parts

$31.050

100+ parts

-

1k+ parts

-

10k+ parts

-

1,141

$31.050

-

-

-

Andel Nordic

Denmark . 1,885 parts In-Stock

1+ parts

$45.280

100+ parts

-

1k+ parts

$31.694

10k+ parts

$31.694

1,885

$45.280

-

$31.694

$31.694

Argo Parts USA

USA . 3,444 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,444

-

-

-

-

Advanced Electronics

New Zealand . 2,428 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,428

-

-

-

-

Continental Prestige Electronics

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Corphita

USA . 917 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

917

-

-

-

-

Bastille Electronics

Australia . 120 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

120

-

-

-

-

Overview

Elevate your power control with the FB30R06W1E3_B1 from Infineon Technologies. As a leading manufacturer in the industry, Infineon brings you top-quality Insulated Gate Bipolar Transistors (IGBT) that are perfect for a wide range of applications. With its N-CHANNEL polarity and complex configuration, this transistor offers unparalleled performance and reliability. Experience the benefits of maximum VCEsat of 2V, maximum power dissipation of 115W, and fast turn on/off times. Trust in Infineon for superior technology that delivers value and efficiency to your projects.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL polarity allows for efficient power control and high performance in switching applications.

Configuration: COMPLEX

COMPLEX configuration enables versatile use in various power control applications.

Maximum VCEsat: 2 V

Low VCEsat of 2 V indicates minimal voltage drop across the collector-emitter junction, leading to high efficiency.

Package Shape: RECTANGULAR

RECTANGULAR package shape offers easy integration and mounting in electronic circuits.

No. of Elements: 7

Seven elements provide enhanced functionality and performance capabilities in power control applications.

Nominal Turn Off Time (toff): 245 ns

Fast turn-off time of 245 ns enables quick switching between on and off states, contributing to efficient power control.

No. of Terminals: 22

Twenty-two terminals allow for versatile connection options and compatibility with different circuit configurations.

Maximum Power Dissipation (Abs): 115 W

High power dissipation capability of 115 W ensures reliable operation in high-power applications.

Package Style (Meter): FLANGE MOUNT

FLANGE MOUNT package style facilitates secure mounting and heat dissipation for optimal performance.

Maximum Operating Temperature: 175 °C

High maximum operating temperature of 175°C ensures stable performance in demanding environmental conditions.

Maximum Collector-Emitter Voltage: 600 V

High collector-emitter voltage rating of 600 V allows for safe and reliable operation in high voltage applications.

Transistor Element Material: SILICON

SILICON material ensures durability, high efficiency, and reliability in power control applications.

Maximum Gate-Emitter Voltage: 20 V

Maximum gate-emitter voltage of 20 V provides sufficient headroom for gate control signals, ensuring effective switching operation.

Maximum Collector Current (IC): 39 A

High collector current rating of 39 A allows for handling of large currents in power control applications.

Terminal Position: UPPER

Upper terminal position facilitates easy connectivity and integration into circuit layouts.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260°C ensures reliable soldering during assembly processes.

Nominal Turn On Time (ton): 42 ns

Fast turn-on time of 42 ns enables quick and efficient switching from off to on state, enhancing performance in power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FB30R06W1E3_B1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X22

Moisture Sensitivity Level (MSL):

1

No. of Elements:

7

No. of Terminals:

22

Maximum Operating Temperature:

175 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

245 ns

Nominal Turn On Time (ton):

42 ns

Maximum VCEsat:

2 V

Trade Compliance

FB30R06W1E3_B1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 4